JP2006190980A - 窒化物半導体発光素子およびその製造方法 - Google Patents
窒化物半導体発光素子およびその製造方法 Download PDFInfo
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Abstract
【解決手段】本発明にかかる窒化物半導体発光素子の製造方法においては、まず、ストライプ状の溝部17が形成された窒化物半導体基板を用意する。溝部17に、基板表面に対して53.5度以上63.4度以下の傾きを有する結晶面16ができるように、溝部17の側壁を含む窒化物半導体基板10上に、窒化物半導体からなる下地層21を形成する。下地層21の上に、Alを含む下部クラッド層と、活性層と、Alを含む上部クラッド層からなる発光素子構造11を形成する。
【選択図】図4
Description
11 窒化物半導体からなる発光素子構造の層
12 リッジストライプ部
13 絶縁膜
14 p電極
15 n電極
16 結晶面
17 溝部(溝)
18 丘部(丘)
21 窒化物半導体からなる下地層
22 n型Al0.062Ga0.938N第1クラッド層
23 n型Al0.1Ga0.9N第2クラッド層
24 n型Al0.062Ga0.938N第3クラッド層
25 n型GaN光ガイド層
26 多重量子井戸構造活性層
27 p型Al0.3Ga0.7Nキャリアブロック層
28 p型GaN光ガイド層
29 p型Al0.1Ga0.9Nクラッド層
30 p型GaNコンタクト層
41 分割ライン
100 窒化物半導体基板の法線方向
101 下地層の法線方向
110 結晶面の法線方向
120 窒化物半導体基板もしくは下地層と結晶面との間の角度
130 異常成長の部分
140 うねりのような表面モフォロジーを表す。
Claims (13)
- ストライプ状の溝部が形成された窒化物半導体基板を用意する工程と、
前記溝部に、前記基板表面に対して53.5度以上63.4度以下の傾きを有する結晶面ができるように、前記溝部の側壁を含む前記窒化物半導体基板上に、窒化物半導体からなる下地層を形成する工程と、
前記下地層の上に、Alを含む下部クラッド層と、活性層と、Alを含む上部クラッド層を順次形成する工程とを具備することを特徴とする窒化物半導体発光素子の製造方法。 - 前記下地層のAl組成比は、前記下部クラッド層のAl組成比よりも小さいことを特徴とする請求項1に記載の窒化物半導体発光素子の製造方法。
- 前記下地層のAl組成比は5%以下であることを特徴とする請求項2に記載の窒化物半導体発光素子の製造方法。
- 前記下地層はGaNであることを特徴とする請求項1に記載の窒化物半導体発光素子の製造方法。
- 前記結晶面が{11−22}面を含んでいることを特徴とする請求項1に記載の窒化物半導体発光素子の製造方法。
- 前記下地層の層厚は、0.01μm以上2μm以下であることを特徴とする請求項1に記載の窒化物半導体発光素子の製造方法。
- 前記溝部の深さは、0.5μm以上20μm以下であることを特徴とする請求項1に記載の窒化物半導体発光素子の製造方法。
- 前記溝部の幅が5μm以上100μm以下であることを特徴とする請求項1に記載の窒化物半導体発光素子の製造方法。
- 窒化物半導体基板と、
前記窒化物半導体基板の上に設けられ、窒化物半導体からなる下地層と、
前記下地層の上に順に設けられた、Alを含む下部クラッド層と、活性層と、Alを含む上部クラッド層とを備えた窒化物半導体発光素子。 - 前記下地層のAl組成比は、前記下部クラッド層のAl組成比よりも小さいことを特徴とする請求項9に記載の窒化物半導体発光素子。
- 前記下地層のAl組成比は5%以下であることを特徴とする請求項10に記載の窒化物半導体発光素子。
- 前記下地層はGaNであることを特徴とする請求項11に記載の窒化物半導体発光素子。
- 前記下地層の層厚は、0.01μm以上1μm以下であることを特徴とする請求項9に記載の窒化物半導体発光素子。
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US20080283866A1 (en) | 2008-11-20 |
US7410819B2 (en) | 2008-08-12 |
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US20060131590A1 (en) | 2006-06-22 |
US7700963B2 (en) | 2010-04-20 |
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