JP2006019327A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2006019327A JP2006019327A JP2004192744A JP2004192744A JP2006019327A JP 2006019327 A JP2006019327 A JP 2006019327A JP 2004192744 A JP2004192744 A JP 2004192744A JP 2004192744 A JP2004192744 A JP 2004192744A JP 2006019327 A JP2006019327 A JP 2006019327A
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- silicon nitride
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 96
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 96
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 76
- 239000010703 silicon Substances 0.000 claims abstract description 76
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 46
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 299
- 239000000758 substrate Substances 0.000 claims description 72
- 239000011229 interlayer Substances 0.000 claims description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 9
- 238000011049 filling Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 2
- 230000002265 prevention Effects 0.000 claims description 2
- 230000003068 static effect Effects 0.000 abstract 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 34
- 230000008033 biological extinction Effects 0.000 description 28
- 239000007789 gas Substances 0.000 description 17
- 238000001228 spectrum Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000031700 light absorption Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 241000293849 Cordylanthus Species 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 108091006146 Channels Proteins 0.000 description 3
- 238000003848 UV Light-Curing Methods 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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Abstract
酸化シリコン層、窒化シリコン層の積層ライナを備えたSTIを有し、帯電を低減できる半導体装置およびその製造方法を提供する。
【解決手段】
半導体装置は、シリコン基板と、前記シリコン基板の表面から下方に向かって形成され、前記シリコン基板の表面に活性領域を画定するトレンチと、前記トレンチの内壁を覆う酸化シリコン層の第1ライナ層と、前記第1ライナ層の上に形成された窒化シリコン層の第2ライナ層と、前記第2ライナ層の上に形成され、前記トレンチを埋める絶縁物の素子分離領域と、前記活性領域に形成されたpチャネルMOSトランジスタと、前記pチャネルMOSトランジスタを覆って,前記シリコン基板上方に形成され,紫外光遮蔽能を有さない窒化シリコン層のコンタクトエッチストッパ層と、前記コンタクトエッチストッパ層の上方に形成され、紫外光遮蔽能を有する窒化シリコン層の遮光膜と、を有する。
【選択図】 図3
Description
(付記1)(1)
シリコン基板と、
前記シリコン基板の表面から下方に向かって形成され、前記シリコン基板の表面に活性領域を画定するトレンチと、
前記トレンチの内壁を覆う窒化シリコン層のライナ層と、
前記第2ライナ層の上に形成され、前記トレンチを埋める絶縁物の素子分離領域と、
前記活性領域に形成されたpチャネルMOSトランジスタと、
前記pチャネルMOSトランジスタを覆って,前記シリコン基板上方に形成され,紫外光遮蔽能を有さない窒化シリコン層のコンタクトエッチストッパ層と、
前記コンタクトエッチストッパ層の上方に形成され、紫外光遮蔽能を有する窒化シリコン層の遮光膜と、
を有する半導体装置。
(付記2)
さらに、前記窒化シリコン層のライナ層下方で、前記トレンチの内壁を覆う酸化シリコン層の下層ライナ層を有する付記1記載の半導体装置。
(付記3)(2)
さらに、前記コンタクトエッチストッパ層と前記遮光膜との間に形成され,紫外光遮蔽能を有さない酸化シリコン系絶縁層の下層層間絶縁膜を有する付記1記載の半導体装置。
(付記4)(3)
前記遮光膜の窒化シリコン層は,前記コンタクトエッチストッパ層の窒化シリコン層より高いSi組成を有する付記1〜3のいずれか1項記載の半導体装置。
(付記5)(4)
前記ライナ層の窒化シリコン層は,前記シリコン基板表面より引き下げられた上端を有する付記1〜4のいずれか1項記載の半導体装置。
(付記6)(5)
さらに、前記遮光膜上方に形成され,紫外光遮蔽能を有さない中層層間絶縁膜と、
前記中層層間絶縁膜に埋め込まれた配線と、
前記配線を覆って,前記中層層間絶縁膜上に形成され,酸素遮蔽能と配線金属拡散防止能を有し,紫外線遮蔽能を有さない拡散防止層と、
を有する付記1〜5のいずれか1項記載の半導体装置。
(付記7)
前記配線が銅配線である付記6記載の半導体装置。
(付記8)(6)
シリコン基板と、
前記シリコン基板の表面から下方に向かって形成され、前記シリコン基板の表面に活性領域を画定するトレンチと、
前記トレンチの内壁を覆う窒化シリコン層のライナ層と、
前記ライナ層の上に形成され、前記トレンチを埋める絶縁物の素子分離領域と、
前記活性領域に形成されたpチャネルMOSトランジスタと、
前記pチャネルMOSトランジスタを覆って,前記シリコン基板上方に形成され,紫外光遮蔽能を有さない窒化シリコン層のコンタクトエッチストッパ層と、
前記コンタクトエッチストッパ層の上に形成され,紫外光遮蔽能を有さない酸化シリコン系絶縁層の下層層間絶縁膜と、
前記下層層間絶縁膜を貫通し,前記pチャネルMOSトランジスタに達する導電性プラグと、
前記導電性プラグを覆って,前記下層層間絶縁膜の上方に形成され、紫外光遮蔽能を有する有機絶縁層の中層層間絶縁膜と、
前記中層層間絶縁膜を貫通し,前記導電性プラグに達する配線と、
を有する半導体装置。
(付記9)
さらに、前記窒化シリコン層の下方で、前記トレンチの内壁を覆う酸化シリコン層の下層ライナ層を有する付記8記載の半導体装置。
(付記10)
前記配線が銅配線である付記8記載の半導体装置。
(付記11)
前記有機絶縁層がポリアリルエーテル層である付記8記載の半導体装置の製造方法。
(付記12)(7)
さらに、前記中層層間絶縁膜上方に形成され,紫外光遮蔽能を有さない上層層間絶縁膜と、
前記上層層間絶縁膜に埋め込まれた銅配線と、
を有する付記8〜11のいずれか1項記載の半導体装置。
(付記13)(8)
(a)シリコン基板表面を選択的にエッチングし、活性領域を画定するトレンチを形成する工程と、
(b)前記トレンチ内に露出したシリコン基板表面上方に窒化シリコン層のライナ絶縁層を形成する工程と、
(c)前記ライナ絶縁層の画定する凹部を埋め込んで、絶縁物の素子分離領域を形成する工程と、
(d)前記活性領域にpチャネルMOSトランジスタを形成する工程と、
(e)前記pチャネルMOSトランジスタを覆って,前記シリコン基板上方に紫外線遮蔽能を有さない窒化シリコン層のコンタクトエッチストッパ層を形成する工程と,
(f)前記コンタクトエッチストッパ層上方に、紫外線遮蔽能を有する窒化シリコン層の遮光膜を形成する工程と,
を含む半導体装置の製造方法。
(付記14)
さらに、(g)前記窒化シリコン層のライナ層下方で、前記トレンチ内に露出したシリコン基板表面上に酸化シリコン層の下層ライナ層を形成する工程を含む付記13記載の半導体装置の製造方法。
(付記15)(9)
前記工程(b)が、熱CVDで前記窒化シリコン層を形成する付記13または14記載の半導体装置の製造方法。
(付記16)(10)
前記工程(e)が,熱CVDで第1のSi組成の窒化シリコン層を形成し,前記工程(f)が,プラズマCVDで前記第1のSi組成より高い第2のSi組成の窒化シリコン層を形成する付記13または15記載の半導体装置の製造方法。
12 シャロートレンチ
13 酸化シリコン層ライナ
14 窒化シリコン層ライナ
15 HDP酸化シリコン層
16 ゲート絶縁膜
17 ゲート電極
18 エクステンション領域
21 ソース/ドレイン拡散層
23 シリサイド層
25 コンタクトエッチストッパ層
26 下層層間絶縁層
27 コンタクト孔
28 バリア層
29 W層
31 (紫外線遮蔽能を有する)窒化シリコン層
32 SiOC層
33 配線用トレンチ
34 バリア層
35 銅層
37 SiC層
42、44 有機絶縁層(ポリアリルエーテル層)
45 デュアルダマシン用トレンチ
46 バリア層
47 銅層
49 SiC層
W ウェル
132 SiOC層
133 配線用トレンチ
134 バリア層
135 銅層
142,144 SiOC層
Claims (10)
- シリコン基板と、
前記シリコン基板の表面から下方に向かって形成され、前記シリコン基板の表面に活性領域を画定するトレンチと、
前記トレンチの内壁を覆う窒化シリコン層のライナ層と、
前記第2ライナ層の上に形成され、前記トレンチを埋める絶縁物の素子分離領域と、
前記活性領域に形成されたpチャネルMOSトランジスタと、
前記pチャネルMOSトランジスタを覆って,前記シリコン基板上方に形成され,紫外光遮蔽能を有さない窒化シリコン層のコンタクトエッチストッパ層と、
前記コンタクトエッチストッパ層の上方に形成され、紫外光遮蔽能を有する窒化シリコン層の遮光膜と、
を有する半導体装置。 - さらに、前記コンタクトエッチストッパ層と前記遮光膜との間に形成され,紫外光遮蔽能を有さない酸化シリコン系絶縁層の下層層間絶縁膜を有する請求項1記載の半導体装置。
- 前記遮光膜の窒化シリコン層は,前記コンタクトエッチストッパ層の窒化シリコン層より高いSi組成を有する請求項1または2記載の半導体装置。
- 前記第2ライナ層の窒化シリコン層は,前記シリコン基板表面より引き下げられた上端を有する請求項1〜3のいずれか1項記載の半導体装置。
- さらに、前記遮光膜上方に形成され,紫外光遮蔽能を有さない中層層間絶縁膜と、
前記中層層間絶縁膜に埋め込まれた配線と、
前記配線を覆って,前記中層層間絶縁膜上に形成され,酸素遮蔽能と配線金属拡散防止能を有し,紫外線遮蔽能を有さない拡散防止層と、
を有する請求項1〜4のいずれか1項記載の半導体装置。 - シリコン基板と、
前記シリコン基板の表面から下方に向かって形成され、前記シリコン基板の表面に活性領域を画定するトレンチと、
前記トレンチの内壁を覆う窒化シリコン層のライナ層と、
前記ライナ層の上に形成され、前記トレンチを埋める絶縁物の素子分離領域と、
前記活性領域に形成されたpチャネルMOSトランジスタと、
前記pチャネルMOSトランジスタを覆って,前記シリコン基板上方に形成され,紫外光遮蔽能を有さない窒化シリコン層のコンタクトエッチストッパ層と、
前記コンタクトエッチストッパ層の上に形成され,紫外光遮蔽能を有さない酸化シリコン系絶縁層の下層層間絶縁膜と、
前記下層層間絶縁膜を貫通し,前記pチャネルMOSトランジスタに達する導電性プラグと、
前記導電性プラグを覆って,前記下層層間絶縁膜の上方に形成され、紫外光遮蔽能を有する有機絶縁層の中層層間絶縁膜と、
前記中層層間絶縁膜を貫通し,前記導電性プラグに達する配線と、
を有する半導体装置。 - さらに、前記中層層間絶縁膜上方に形成され,紫外光遮蔽能を有さない上層層間絶縁膜と、
前記上層層間絶縁膜に埋め込まれた銅配線と、
を有する請求項6記載の半導体装置。 - (a)シリコン基板表面を選択的にエッチングし、活性領域を画定するトレンチを形成する工程と、
(b)前記トレンチ内に露出したシリコン基板表面上方に窒化シリコン層のライナ絶縁層を形成する工程と、
(c)前記ライナ絶縁層の画定する凹部を埋め込んで、絶縁物の素子分離領域を形成する工程と、
(d)前記活性領域にpチャネルMOSトランジスタを形成する工程と、
(e)前記pチャネルMOSトランジスタを覆って,前記シリコン基板上方に紫外線遮蔽能を有さない窒化シリコン層のコンタクトエッチストッパ層を形成する工程と,
(f)前記コンタクトエッチストッパ層上方に、紫外線遮蔽能を有する窒化シリコン層の遮光膜を形成する工程と,
を含む半導体装置の製造方法。 - 前記工程(b)が、熱CVDで前記窒化シリコン層を形成する請求項8記載の半導体装置の製造方法。
- 前記工程(e)が,熱CVDで第1のSi組成の窒化シリコン層を形成し,前記工程(f)が,プラズマCVDで前記第1のSi組成より高い第2のSi組成の窒化シリコン層を形成する請求項8または9記載の半導体装置の製造方法。
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JP2010517307A (ja) * | 2007-01-24 | 2010-05-20 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 誘電体キャップ層 |
JP2009099813A (ja) * | 2007-10-17 | 2009-05-07 | Spansion Llc | 半導体装置の製造方法 |
US7994585B2 (en) | 2008-01-11 | 2011-08-09 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2009170729A (ja) * | 2008-01-17 | 2009-07-30 | Spansion Llc | 半導体装置の製造方法 |
WO2014084132A1 (ja) * | 2012-11-30 | 2014-06-05 | ピーエスフォー ルクスコ エスエイアールエル | 装置及びその製造方法 |
JP2014112746A (ja) * | 2014-03-27 | 2014-06-19 | Spansion Llc | 半導体装置の製造方法 |
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US8828830B2 (en) | 2014-09-09 |
US20060001104A1 (en) | 2006-01-05 |
US8022442B2 (en) | 2011-09-20 |
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