JP2006009144A - 真空成膜装置 - Google Patents
真空成膜装置 Download PDFInfo
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- JP2006009144A JP2006009144A JP2005130851A JP2005130851A JP2006009144A JP 2006009144 A JP2006009144 A JP 2006009144A JP 2005130851 A JP2005130851 A JP 2005130851A JP 2005130851 A JP2005130851 A JP 2005130851A JP 2006009144 A JP2006009144 A JP 2006009144A
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- 239000000758 substrate Substances 0.000 claims abstract description 154
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 139
- 238000000034 method Methods 0.000 claims abstract description 122
- 238000006243 chemical reaction Methods 0.000 claims abstract description 106
- 230000008569 process Effects 0.000 claims abstract description 93
- 238000001179 sorption measurement Methods 0.000 claims abstract description 65
- 239000007789 gas Substances 0.000 claims description 162
- 239000003054 catalyst Substances 0.000 claims description 64
- 239000012495 reaction gas Substances 0.000 claims description 64
- 239000002994 raw material Substances 0.000 claims description 44
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000001816 cooling Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000010408 film Substances 0.000 abstract description 274
- 239000010409 thin film Substances 0.000 abstract description 47
- 239000000376 reactant Substances 0.000 abstract 2
- 238000000231 atomic layer deposition Methods 0.000 description 22
- 230000004888 barrier function Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 13
- 239000006185 dispersion Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 239000002243 precursor Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229910007950 ZrBN Inorganic materials 0.000 description 6
- 230000005587 bubbling Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010574 gas phase reaction Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/38—Borides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
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- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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-
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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Abstract
【解決手段】 基板ステージと、ベルジャー形容器と、成膜対象物搬送手段と、ガス導入手段とを備え、成膜プロセス実施時に、基板ステージと容器とで真空チャンバーを形成し、真空チャンバーの空間内にガス導入手段を介して原料ガス、反応ガスが導入され、成膜対象物上に原料ガスを吸着させる吸着工程及び吸着された原料ガスと反応ガスとを反応させる反応工程のいずれかを行うことができるように構成してなる。
【選択図】 図1
Description
Zr(BH4)4 → ZrB2 + B2H6 + 5H2 (1)
Zr(BH4)4 + H2 → ZrB2 + B2H6 + 6H2 (2)
104a、104d ベルジャー形容器 105a、105d 空間
106a、106b 間隙 107a、107b ガス導入手段
109 RFコイル 113 排気手段
V 排気通路 S 成膜対象物
202 触媒室 202a ガス導入口
203 ワイヤー 204 冷却手段
301 真空成膜装置 302a〜302d 基板ステージ
305 ステージ支持台 305a〜305d 排気入口
306a〜306d ベルジャー形容器 307a〜307d 空間
308 回転テーブル 308a〜308d 貫通穴
308e〜308h 間隙 309a〜309d 基板保持部
310 ベローズタイプ配管 311a〜311d ガス導入手段
313 RFコイル 601 タンク
602、602a、602b 網 603、603’ 原料
Claims (16)
- 成膜対象物を載置するための昇降自在の複数の基板ステージと、該複数の基板ステージに対向して配置された昇降自在の複数の真空チャンバー用容器と、該複数の基板ステージのそれぞれの間で成膜対象物を移動させるための搬送手段と、該複数の真空チャンバー用容器のそれぞれに別々に接続した複数のガス導入手段とを備えてなり、プロセス実施時に、該基板ステージ及び真空チャンバー用容器のいずれか一方を他方に向かって昇降させるか又は両者を相互に昇降させることにより該基板ステージの上面と真空チャンバー用容器の開口部とを接触させて、該基板ステージのそれぞれと真空チャンバー用容器のそれぞれとで囲まれる真空チャンバーが複数形成されるように、また、該複数の真空チャンバーの各空間内に該ガス導入手段を介して所定の原料ガス、反応ガスが導入され、該空間内で、成膜対象物の表面に原料ガスを吸着させる吸着工程及び吸着された原料ガスと反応ガスとを反応させる反応工程のいずれかを行うことができるように構成してなることを特徴とする真空成膜装置。
- 前記真空チャンバー用容器の少なくとも1つの外側にプラズマ発生装置が設けられていることを特徴とする請求項1記載の真空成膜装置。
- 前記反応工程用の真空チャンバーの容器に接続して成膜装置の外部に、又はこの反応工程用の真空チャンバーの内部に触媒手段が設けられ、該触媒手段により反応ガスを励起して反応空間内に導入できるように構成したことを特徴とする請求項1又は2記載の真空成膜装置。
- 前記触媒手段及び反応工程用真空チャンバーの容器が、冷却手段を備えていることを特徴とする請求項3記載の真空成膜装置。
- 前記真空チャンバーの空間内で吸着工程、反応工程を行う際に、真空チャンバー用容器の開口部の内周面と基板ステージの外周壁面との間に所定の寸法の間隙が形成されるようにし、この間隙を通して排気できるように構成したことを特徴とする請求項1〜4のいずれかに記載の真空成膜装置。
- 前記真空チャンバー用容器がベルジャー形容器であることを特徴とする請求項1〜5のいずれかに記載の真空成膜装置。
- 前記複数の基板ステージのそれぞれに、成膜対象物を加熱するための加熱手段が設けられていることを特徴とする請求項1〜6のいずれかに記載の真空成膜装置。
- 成膜対象物を載置しかつ搬送するための昇降自在の回転テーブルと、該回転テーブルに対向して配置された昇降自在の複数の真空チャンバー用容器と、該複数の真空チャンバー用容器のそれぞれに別々に接続した複数のガス導入手段とを備えてなり、プロセス実施時に、該回転テーブル及び真空チャンバー用容器のいずれか一方を他方に向かって昇降させるか又は両者を相互に昇降させることにより該回転テーブルの上面と真空チャンバー用容器の開口部とを接触させて、該回転テーブルと真空チャンバー用容器のそれぞれとで囲まれる真空チャンバーが複数形成されるように、また、該複数の真空チャンバーの各空間内に該ガス導入手段を介して所定の原料ガス、反応ガスが導入され、該空間内で、成膜対象物の表面に原料ガスを吸着させる吸着工程及び吸着された原料ガスと反応ガスとを反応させる反応工程のいずれかを行うことができるように構成してなることを特徴とする真空成膜装置。
- 前記回転テーブルには同一円周上に真空チャンバー用容器の数と同じ数の貫通穴が形成され、それぞれの貫通穴の周辺部には成膜対象物を載置する基板保持部が設けられており、また、載置される成膜対象物を昇降するための手段として、この貫通穴を貫通できるようにした昇降自在の基板ステージが設けられていることを特徴とする請求項8記載の真空成膜装置。
- 前記真空チャンバー用容器の少なくとも1つの外側にプラズマ発生装置が設けられていることを特徴とする請求項8又は9記載の真空成膜装置。
- 前記反応工程用真空チャンバーの容器に接続して成膜装置の外部に、又はこの反応工程用真空チャンバーの内部に触媒手段が設けられ、該触媒手段により反応ガスを励起して反応空間内に導入するように構成したことを特徴とする請求項8〜10のいずれかに記載の真空成膜装置。
- 前記触媒手段及び反応工程用真空チャンバーの容器が、冷却手段を備えていることを特徴とする請求項11に記載の真空成膜装置。
- 前記基板保持部の外周近傍に複数個の排気口が設けられていることを特徴とする請求項9〜12のいずれかに記載の真空成膜装置。
- 前記真空チャンバー用容器がベルジャー形容器であることを特徴とする請求項8〜13のいずれかに記載の真空成膜装置。
- 前記複数の基板ステージのそれぞれに、成膜対象物を加熱するための加熱手段が設けられていることを特徴とする請求項9〜14のいずれかに記載の真空成膜装置。
- 前記基板ステージを設置するためのステージ支持台が更に設けられ、このステージ支持台の内部には排気通路が設けられていることを特徴とする請求項9〜15のいずれかに記載の真空成膜装置。
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US20080202423A1 (en) | 2008-08-28 |
JP4879509B2 (ja) | 2012-02-22 |
US7828900B2 (en) | 2010-11-09 |
US20050268852A1 (en) | 2005-12-08 |
TWI391517B (zh) | 2013-04-01 |
KR101187619B1 (ko) | 2012-10-05 |
KR20060048008A (ko) | 2006-05-18 |
US7763115B2 (en) | 2010-07-27 |
TW200606276A (en) | 2006-02-16 |
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