ES2712868B1 - Cámara para depósito de capas atómicas - Google Patents
Cámara para depósito de capas atómicas Download PDFInfo
- Publication number
- ES2712868B1 ES2712868B1 ES201990026A ES201990026A ES2712868B1 ES 2712868 B1 ES2712868 B1 ES 2712868B1 ES 201990026 A ES201990026 A ES 201990026A ES 201990026 A ES201990026 A ES 201990026A ES 2712868 B1 ES2712868 B1 ES 2712868B1
- Authority
- ES
- Spain
- Prior art keywords
- chamber
- atomic layers
- depositing atomic
- cover
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (6)
- REIVINDICACIONES1 Cámara (1) para depósito de capas atómicas, que comprende un cuerpo (2) de la cámara, una tapa (3) de la cámara y al menos una placa de separación (4) que delimita diferentes volúmenes interiores (5) en el cuerpo (2) de la cámara, presentando cada uno de estos volúmenes interiores (5) una entrada (6) y una salida (7), caracterizada por que el cuerpo (2) de la cámara comprende al menos un escalón (8), estando ubicado cada uno de estos escalones (8) en la separación entre dos volúmenes interiores (5) consecutivos.
- 2.- Cámara (1) para depósito de capas atómicas según la reivindicación 1, en la que los volúmenes interiores (5) son cilíndricos y de diámetro decreciente hacia abajo.
- 3.- Cámara (1) para depósito de capas atómicas según cualquiera de las reivindicaciones anteriores, que comprende adicionalmente un soporte (9) al que se puede acoplar la tapa (3) de la cámara de manera desmontable.
- 4.- Cámara (1) para depósito de capas atómicas según la reivindicación 3, en la que la tapa (3) de la cámara es una tapa para procesos térmicos de depósito de capas atómicas.
- 5.- Cámara (1) para depósito de capas atómicas según la reivindicación 3, en la que la tapa (3) de la cámara es una tapa de reactor de plasma.
- 6. - Cámara (1) para depósito de capas atómicas según la reivindicación 3, en la que la tapa (3) de la cámara es una tapa con alimentadores eléctricos y mecánicos.Equipo para depósito de capas atómicas, que comprende una cámara (1) para depósito de capas atómicas de una de las reivindicaciones 1 a 6.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/ES2016/070663 WO2018055215A1 (es) | 2016-09-22 | 2016-09-22 | Cámara para depósito de capas atómicas |
Publications (3)
Publication Number | Publication Date |
---|---|
ES2712868A2 ES2712868A2 (es) | 2019-05-16 |
ES2712868R1 ES2712868R1 (es) | 2019-05-29 |
ES2712868B1 true ES2712868B1 (es) | 2020-03-10 |
Family
ID=57421890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES201990026A Active ES2712868B1 (es) | 2016-09-22 | 2016-09-22 | Cámara para depósito de capas atómicas |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN109790619A (es) |
ES (1) | ES2712868B1 (es) |
WO (1) | WO2018055215A1 (es) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003008663A1 (en) * | 2001-07-16 | 2003-01-30 | Applied Materials, Inc. | Formation of titanium nitride films using a cyclical deposition process |
JP4879509B2 (ja) * | 2004-05-21 | 2012-02-22 | 株式会社アルバック | 真空成膜装置 |
JP5878813B2 (ja) * | 2011-06-21 | 2016-03-08 | 東京エレクトロン株式会社 | バッチ式処理装置 |
DE102012010537A1 (de) * | 2012-05-29 | 2013-12-05 | Robert Bosch Gmbh | Programmiervorlage für verteilteAnwendungsprogramme |
US8822313B2 (en) * | 2012-12-20 | 2014-09-02 | Intermolecular, Inc. | Surface treatment methods and systems for substrate processing |
KR101579527B1 (ko) * | 2013-09-16 | 2015-12-22 | 코닉이앤씨 주식회사 | 스캔형 반응기를 가지는 원자층 증착 장치 및 방법 |
-
2016
- 2016-09-22 WO PCT/ES2016/070663 patent/WO2018055215A1/es active Application Filing
- 2016-09-22 CN CN201680089470.7A patent/CN109790619A/zh active Pending
- 2016-09-22 ES ES201990026A patent/ES2712868B1/es active Active
Also Published As
Publication number | Publication date |
---|---|
ES2712868A2 (es) | 2019-05-16 |
CN109790619A (zh) | 2019-05-21 |
ES2712868R1 (es) | 2019-05-29 |
WO2018055215A1 (es) | 2018-03-29 |
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