JP7489786B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP7489786B2 JP7489786B2 JP2020033591A JP2020033591A JP7489786B2 JP 7489786 B2 JP7489786 B2 JP 7489786B2 JP 2020033591 A JP2020033591 A JP 2020033591A JP 2020033591 A JP2020033591 A JP 2020033591A JP 7489786 B2 JP7489786 B2 JP 7489786B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 81
- 239000011368 organic material Substances 0.000 claims description 65
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 238000003475 lamination Methods 0.000 claims description 43
- 230000003647 oxidation Effects 0.000 claims description 31
- 238000007254 oxidation reaction Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 27
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 238000003795 desorption Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 description 25
- 239000000178 monomer Substances 0.000 description 18
- 238000000137 annealing Methods 0.000 description 17
- 238000012546 transfer Methods 0.000 description 16
- 239000002994 raw material Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 238000007789 sealing Methods 0.000 description 9
- 150000001412 amines Chemical class 0.000 description 8
- 239000012948 isocyanate Substances 0.000 description 8
- 150000002513 isocyanates Chemical class 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 230000007723 transport mechanism Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 239000004202 carbamide Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 229920002396 Polyurea Polymers 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000006200 vaporizer Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 125000003158 alcohol group Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Description
図1は、本開示の一実施形態における製造システム10の一例を示すシステム構成図である。製造システム10は、第1の積層装置200、第2の積層装置300、酸化装置400、およびアニール装置500を備える。製造システム10は、マルチチャンバータイプの真空処理システムである。製造システム10は、第1の積層装置200、第2の積層装置300、酸化装置400、およびアニール装置500を用いて、半導体装置に用いられる素子が形成される基板Wにエアギャップを形成する。
図2は、本開示の一実施形態における第1の積層装置200の一例を示す概略断面である。第1の積層装置200は、容器201、排気装置202、シャワーヘッド206、および載置台207を有する。本実施形態において、第1の積層装置200は、例えばCVD(Chemical Vapor Deposition)装置である。
図3は、本開示の一実施形態における第2の積層装置300の一例を示す概略断面である。第2の積層装置300は、容器301、排気装置302、供給管303、載置台304、およびターゲットホルダ305を有する。本実施形態において、第2の積層装置300は、スパッタリング装置である。
図4は、本開示の一実施形態における酸化装置400の一例を示す概略断面である。酸化装置400は、容器401、排気管402、供給管403、および載置台404を有する。
図5は、本開示の一実施形態におけるアニール装置500の一例を示す概略断面である。アニール装置500は、容器501、排気管502、供給管503、載置台504、ランプハウス505、および赤外線ランプ506を有する。
図6は、半導体装置の製造方法の一例を示すフローチャートである。例えば、凹部が形成された基板Wが第1の積層装置200内に搬入されることにより、図6に例示された処理が開始される。
基板Wの温度:室温(25[℃])
Arガス:10[sccm]
容器301内の圧力:10[Pa]
ターゲット306に供給される電力:200[W]
なお、本願に開示された技術は、上記した実施形態に限定されるものではなく、その要旨の範囲内で数々の変形が可能である。
G ゲートバルブ
W 基板
10 製造システム
100 制御装置
101 真空搬送室
102 ロードロック室
103 大気搬送室
104 アライメント室
105 ポート
106 搬送機構
107 アーム
108 搬送機構
200 第1の積層装置
201 容器
202 排気装置
203 原料供給源
204 供給管
205 気化器
206 シャワーヘッド
207 載置台
300 第2の積層装置
301 容器
302 排気装置
303 供給管
304 載置台
305 ターゲットホルダ
306 ターゲット
307 電源
400 酸化装置
401 容器
402 排気管
403 供給管
404 載置台
500 アニール装置
501 容器
502 排気管
503 供給管
504 載置台
505 ランプハウス
506 赤外線ランプ
60 凹部
61 有機材料
62 金属膜
63 酸化された金属膜
Claims (2)
- 凹部が形成された基板上に、熱分解可能な有機材料を積層する第1の積層工程と、
モリブデンまたはタングステンを含むターゲットを用いたスパッタリングにより前記有機材料の上に金属膜を積層する第2の積層工程と、
前記金属膜を酸化させる酸化工程と、
前記基板を予め定められた温度に加熱することにより前記有機材料を熱分解させ、酸化された前記金属膜の下層の前記有機材料を、酸化された前記金属膜を介して脱離させることにより、酸化された前記金属膜と前記凹部との間にエアギャップを形成する脱離工程と
を含み、
前記第2の積層工程および前記酸化工程は、前記基板の温度が200[℃]以下に維持された状態で実行される半導体装置の製造方法。 - 凹部が形成された基板上に、熱分解可能な有機材料を積層する第1の積層工程と、
酸化モリブデンまたは酸化タングステンを含むターゲットを用いたスパッタリングにより前記有機材料の上に金属酸化膜を積層する第2の積層工程と、
前記基板を予め定められた温度に加熱することにより前記有機材料を熱分解させ、前記金属酸化膜の下層の前記有機材料を、前記金属酸化膜を介して脱離させることにより、前記金属酸化膜と前記凹部との間にエアギャップを形成する脱離工程と
を含み、
前記第2の積層工程は、前記基板の温度が200[℃]以下に維持された状態で実行される半導体装置の製造方法。
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003315868A (ja) | 2002-04-19 | 2003-11-06 | Fuji Photo Film Co Ltd | エレクトロクロミック絞り装置及びそれを用いたレンズ付きフイルムユニット |
JP2005302766A (ja) | 2004-04-06 | 2005-10-27 | Seiko Epson Corp | 膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器、アクティブマトリクス基板の製造方法 |
US20070264494A1 (en) | 2006-04-11 | 2007-11-15 | Cardinal Cg Company | Photocatalytic coatings having improved low-maintenance properties |
US20080038518A1 (en) | 2002-09-13 | 2008-02-14 | Shipley Company, L.L.C. | Air gap formation |
JP2010192596A (ja) | 2009-02-17 | 2010-09-02 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
JP2012120967A (ja) | 2010-12-07 | 2012-06-28 | Nissan Motor Co Ltd | 可視光応答型光触媒およびこれを含む親水性部材ならびにこれらの製造方法 |
JP2013023414A (ja) | 2011-07-21 | 2013-02-04 | Sumitomo Metal Mining Co Ltd | 易溶解性三酸化モリブデン |
US20170117119A1 (en) | 2015-10-22 | 2017-04-27 | Richard DeVito | Deposition System With Integrated Cooling On A Rotating Drum |
JP2018182295A (ja) | 2017-04-17 | 2018-11-15 | Tianma Japan株式会社 | 剥離膜、表示装置の製造方法及びデバイス |
JP2019207909A (ja) | 2018-05-28 | 2019-12-05 | 東京エレクトロン株式会社 | 半導体装置の製造方法および基板処理装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01275405A (ja) * | 1988-04-26 | 1989-11-06 | Matsushita Electric Ind Co Ltd | 超電導体構造物の製造方法 |
US6051369A (en) * | 1998-01-08 | 2000-04-18 | Kabushiki Kaisha Toshiba | Lithography process using one or more anti-reflective coating films and fabrication process using the lithography process |
KR101032670B1 (ko) * | 2002-11-01 | 2011-05-06 | 조지아 테크 리서치 코오포레이션 | 희생 조성물, 그의 사용 방법 및 그의 분해 방법 |
JP2011216190A (ja) * | 2010-03-31 | 2011-10-27 | Sony Corp | 光電変換装置及びその製造方法 |
JP5560144B2 (ja) | 2010-08-31 | 2014-07-23 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP6374221B2 (ja) * | 2013-06-05 | 2018-08-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN111492471B (zh) * | 2017-12-20 | 2023-08-01 | 株式会社村田制作所 | 半导体装置及其制造方法 |
JP7193729B2 (ja) * | 2019-03-22 | 2022-12-21 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
-
2020
- 2020-02-28 JP JP2020033591A patent/JP7489786B2/ja active Active
-
2021
- 2021-02-17 KR KR1020210020926A patent/KR20210110196A/ko not_active Application Discontinuation
- 2021-02-24 US US17/183,814 patent/US20210272840A1/en not_active Abandoned
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003315868A (ja) | 2002-04-19 | 2003-11-06 | Fuji Photo Film Co Ltd | エレクトロクロミック絞り装置及びそれを用いたレンズ付きフイルムユニット |
US20080038518A1 (en) | 2002-09-13 | 2008-02-14 | Shipley Company, L.L.C. | Air gap formation |
JP2005302766A (ja) | 2004-04-06 | 2005-10-27 | Seiko Epson Corp | 膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器、アクティブマトリクス基板の製造方法 |
US20070264494A1 (en) | 2006-04-11 | 2007-11-15 | Cardinal Cg Company | Photocatalytic coatings having improved low-maintenance properties |
JP2010192596A (ja) | 2009-02-17 | 2010-09-02 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
JP2012120967A (ja) | 2010-12-07 | 2012-06-28 | Nissan Motor Co Ltd | 可視光応答型光触媒およびこれを含む親水性部材ならびにこれらの製造方法 |
JP2013023414A (ja) | 2011-07-21 | 2013-02-04 | Sumitomo Metal Mining Co Ltd | 易溶解性三酸化モリブデン |
US20170117119A1 (en) | 2015-10-22 | 2017-04-27 | Richard DeVito | Deposition System With Integrated Cooling On A Rotating Drum |
JP2018182295A (ja) | 2017-04-17 | 2018-11-15 | Tianma Japan株式会社 | 剥離膜、表示装置の製造方法及びデバイス |
JP2019207909A (ja) | 2018-05-28 | 2019-12-05 | 東京エレクトロン株式会社 | 半導体装置の製造方法および基板処理装置 |
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