JP2021136390A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
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- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
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- 239000010936 titanium Substances 0.000 claims description 3
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- 239000010937 tungsten Substances 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 238000006263 metalation reaction Methods 0.000 claims 1
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- 239000000126 substance Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
図1は、本開示の一実施形態における製造システム10の一例を示すシステム構成図である。製造システム10は、第1の積層装置200、第2の積層装置300、酸化装置400、およびアニール装置500を備える。製造システム10は、マルチチャンバータイプの真空処理システムである。製造システム10は、第1の積層装置200、第2の積層装置300、酸化装置400、およびアニール装置500を用いて、半導体装置に用いられる素子が形成される基板Wにエアギャップを形成する。
図2は、本開示の一実施形態における第1の積層装置200の一例を示す概略断面である。第1の積層装置200は、容器201、排気装置202、シャワーヘッド206、および載置台207を有する。本実施形態において、第1の積層装置200は、例えばCVD(Chemical Vapor Deposition)装置である。
図3は、本開示の一実施形態における第2の積層装置300の一例を示す概略断面である。第2の積層装置300は、容器301、排気装置302、供給管303、載置台304、およびターゲットホルダ305を有する。本実施形態において、第2の積層装置300は、スパッタリング装置である。
図4は、本開示の一実施形態における酸化装置400の一例を示す概略断面である。酸化装置400は、容器401、排気管402、供給管403、および載置台404を有する。
図5は、本開示の一実施形態におけるアニール装置500の一例を示す概略断面である。アニール装置500は、容器501、排気管502、供給管503、載置台504、ランプハウス505、および赤外線ランプ506を有する。
図6は、半導体装置の製造方法の一例を示すフローチャートである。例えば、凹部が形成された基板Wが第1の積層装置200内に搬入されることにより、図6に例示された処理が開始される。
基板Wの温度:室温(25[℃])
Arガス:10[sccm]
容器301内の圧力:10[Pa]
ターゲット306に供給される電力:200[W]
なお、本願に開示された技術は、上記した実施形態に限定されるものではなく、その要旨の範囲内で数々の変形が可能である。
G ゲートバルブ
W 基板
10 製造システム
100 制御装置
101 真空搬送室
102 ロードロック室
103 大気搬送室
104 アライメント室
105 ポート
106 搬送機構
107 アーム
108 搬送機構
200 第1の積層装置
201 容器
202 排気装置
203 原料供給源
204 供給管
205 気化器
206 シャワーヘッド
207 載置台
300 第2の積層装置
301 容器
302 排気装置
303 供給管
304 載置台
305 ターゲットホルダ
306 ターゲット
307 電源
400 酸化装置
401 容器
402 排気管
403 供給管
404 載置台
500 アニール装置
501 容器
502 排気管
503 供給管
504 載置台
505 ランプハウス
506 赤外線ランプ
60 凹部
61 有機材料
62 金属膜
63 酸化された金属膜
Claims (6)
- 凹部が形成された基板上に、熱分解可能な有機材料を積層する第1の積層工程と、
金属を含むターゲットを用いたスパッタリングにより前記有機材料の上に金属膜を積層する第2の積層工程と、
前記金属膜を酸化させる酸化工程と、
前記基板を予め定められた温度に加熱することにより前記有機材料を熱分解させ、酸化された前記金属膜の下層の前記有機材料を、酸化された前記金属膜を介して脱離させることにより、酸化された前記金属膜と前記凹部との間にエアギャップを形成する脱離工程と
を含む半導体装置の製造方法。 - 前記第2の積層工程では、アルミニウム、モリブデン、チタン、またはタングステンが含まれるターゲットを用いてスパッタリングが行われる請求項1に記載の半導体装置の製造方法。
- 前記第2の積層工程および前記酸化工程は、
前記基板の温度が200[℃]以下に維持された状態で実行される請求項1または2に記載の半導体装置の製造方法。 - 凹部が形成された基板上に、熱分解可能な有機材料を積層する第1の積層工程と、
金属酸化物を含むターゲットを用いたスパッタリングにより前記有機材料の上に金属酸化膜を積層する第2の積層工程と、
前記基板を予め定められた温度に加熱することにより前記有機材料を熱分解させ、前記金属酸化膜の下層の前記有機材料を、前記金属酸化膜を介して脱離させることにより、前記金属酸化膜と前記凹部との間にエアギャップを形成する脱離工程と
を含む半導体装置の製造方法。 - 前記第2の積層工程では、酸化アルミニウム、酸化モリブデン、酸化チタン、または酸化タングステンが含まれるターゲットを用いてスパッタリングが行われる請求項3に記載の半導体装置の製造方法。
- 前記第2の積層工程は、
前記基板の温度が200[℃]以下に維持された状態で実行される請求項4または5に記載の半導体装置の製造方法。
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