JP5728772B2 - 原料ガス発生装置 - Google Patents
原料ガス発生装置 Download PDFInfo
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- JP5728772B2 JP5728772B2 JP2011122689A JP2011122689A JP5728772B2 JP 5728772 B2 JP5728772 B2 JP 5728772B2 JP 2011122689 A JP2011122689 A JP 2011122689A JP 2011122689 A JP2011122689 A JP 2011122689A JP 5728772 B2 JP5728772 B2 JP 5728772B2
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- raw material
- gas
- container
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- carrier gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Description
1.第1の実施の形態
2.第2の実施の形態
3.第3の実施の形態
4.変形例
[原料ガス発生装置101の構成例]
図3は、本発明を適用した原料ガス発生装置の第1の実施の形態である原料ガス発生装置101の構成例を模式的に示す断面図である。
ここで、原料ガス発生装置101におけるガスの流れについて説明する。
[原料ガス発生装置201の構成例]
図5は、本発明を適用した原料ガス発生装置の第2の実施の形態である原料ガス発生装置201の構成例を模式的に示す断面図である。なお、図中、図3と対応する部分には、同じ符号を付してある。
[原料ガス発生装置301の構成例]
図8は、本発明を適用した原料ガス発生装置の第3の実施の形態である原料ガス発生装置301の構成例を模式的に示す断面図である。なお、図中、図5と対応する部分には、同じ符号を付してある。
以下、本発明の実施の形態の変形例について説明する。
例えば、原料ガス発生装置101乃至301のように、キャリアガスが固体原料102の上方から鉛直下方向に噴出される構成であれば、通気管113の形状や位置は特に限定されるものではない。例えば、通気管113をL字型にして、容器111の側面を貫通させ、容器111の側面からキャリアガスを導入するようにしてもよい。
また、通気管116の形状および位置は、開口部116Aが容器111内の固体原料102の表面より高い位置に設置され、供給ガスを容器111の外に排出できるのであれば、特に限定されるものではない。
さらに、容器111の形状は円筒形に限定されるものではなく、他の形状とすることも可能である。
また、ガス導入用およびガス排出用の通気管の数は、それぞれ1つに限定されるものではなく、2つ以上設けるようにしてもよい。
102 固体原料
111 容器
112 蓋
113 通気管(導入部材)
113A 開口部
115 ガス拡散部材(拡散部材)
115A 開口部
116 通気管(排出部材)
131 拡散体
132 枠
201 原料ガス発生装置
301 原料ガス発生装置
311 ガス拡散部材
311A乃至311D 開口部
331a乃至331d 拡散体
332 枠
Claims (3)
- 容器内の固体の原料から原料ガスを発生させる原料ガス発生装置において、
前記原料ガスを搬送するためのキャリアガスを前記容器内に導入する導入部材と、
前記容器内にて原料の上方に配置され、焼結金属により構成されて前記導入部材の先端の開口部から導入されるキャリアガスを拡散する拡散体と、前記導入部材の先端の開口部に接続される上面側及び前記拡散体の下面以外の外周側面を全周に亘って覆い下面側に開口部を形成する枠とを備え、前記原料の上方において、前記容器内に導入された前記キャリアガスを拡散し、拡散した前記キャリアガスを前記枠の下面側の開口部から鉛直下方向に噴出する拡散部材と、
前記原料ガスを前記キャリアガスとともに前記原料の上方から前記容器の外に排出する排出部材と
を備えることを特徴とする原料ガス発生装置。 - 前記拡散部材の前記開口部は、前記容器の水平方向の略中央に配置されていることを特徴とする請求項1に記載の原料ガス発生装置。
- 前記拡散部材は複数の前記開口部を備え、
複数の前記開口部は、前記容器の水平方向の中央を中心に略対称に配置されていることを特徴とする請求項1に記載の原料ガス発生装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011122689A JP5728772B2 (ja) | 2011-05-31 | 2011-05-31 | 原料ガス発生装置 |
KR1020120048892A KR101398248B1 (ko) | 2011-05-31 | 2012-05-09 | 원료 가스 발생 장치 |
TW101116485A TWI447258B (zh) | 2011-05-31 | 2012-05-09 | 原料氣體產生裝置 |
CN201210156431.8A CN102808166B (zh) | 2011-05-31 | 2012-05-18 | 原料气体发生装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011122689A JP5728772B2 (ja) | 2011-05-31 | 2011-05-31 | 原料ガス発生装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012251179A JP2012251179A (ja) | 2012-12-20 |
JP5728772B2 true JP5728772B2 (ja) | 2015-06-03 |
Family
ID=47232034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011122689A Active JP5728772B2 (ja) | 2011-05-31 | 2011-05-31 | 原料ガス発生装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5728772B2 (ja) |
KR (1) | KR101398248B1 (ja) |
CN (1) | CN102808166B (ja) |
TW (1) | TWI447258B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6477075B2 (ja) * | 2015-03-17 | 2019-03-06 | 東京エレクトロン株式会社 | 原料ガス供給装置及び成膜装置 |
US10480070B2 (en) * | 2016-05-12 | 2019-11-19 | Versum Materials Us, Llc | Delivery container with flow distributor |
CN106498369B (zh) * | 2017-01-04 | 2019-02-19 | 合肥京东方光电科技有限公司 | 一种容器及用于对显示基板进行修复的修复设备 |
WO2018160931A1 (en) * | 2017-03-03 | 2018-09-07 | Applied Materials, Inc. | Apparatus for increasing flux from an ampoule |
KR20230058843A (ko) * | 2021-10-25 | 2023-05-03 | (주)덕산테코피아 | 반도체 제조장비용 캐니스터 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02124796A (ja) * | 1988-11-02 | 1990-05-14 | Mitsubishi Electric Corp | 固体有機金属供給装置 |
JPH02169023A (ja) * | 1988-12-22 | 1990-06-29 | Mitsubishi Metal Corp | 原料ガス発生器 |
JPH0331477A (ja) * | 1989-06-28 | 1991-02-12 | Oki Electric Ind Co Ltd | Cvd装置用バブラー |
JPH07321040A (ja) * | 1994-05-24 | 1995-12-08 | Nec Corp | 金属化合物収納容器 |
JPH1025576A (ja) * | 1996-04-05 | 1998-01-27 | Dowa Mining Co Ltd | Cvd成膜法における原料化合物の昇華方法 |
DE60020781T2 (de) | 1999-08-20 | 2006-05-11 | Rohm And Haas Chemicals Llc | Sprudelvorrichtung mit zwei Fritten |
TWI273144B (en) * | 2002-02-08 | 2007-02-11 | Tosoh Finechem Corp | Container for loading solid organic metal compound and method for loading the same |
US20050249873A1 (en) * | 2004-05-05 | 2005-11-10 | Demetrius Sarigiannis | Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices |
JP4879509B2 (ja) * | 2004-05-21 | 2012-02-22 | 株式会社アルバック | 真空成膜装置 |
JP4609991B2 (ja) * | 2004-11-17 | 2011-01-12 | ルネサスエレクトロニクス株式会社 | 固体原料気化装置 |
JP2006272100A (ja) * | 2005-03-28 | 2006-10-12 | Ishikawajima Harima Heavy Ind Co Ltd | 揮発性物質の揮発供給システム |
GB2444143B (en) * | 2006-11-27 | 2009-10-28 | Sumitomo Chemical Co | Apparatus of supplying organometallic compound |
JP4873169B2 (ja) | 2007-06-01 | 2012-02-08 | 信越化学工業株式会社 | 固体有機金属化合物の充填方法 |
JP5257197B2 (ja) * | 2008-03-31 | 2013-08-07 | 住友化学株式会社 | 有機金属化合物供給装置 |
US20100119734A1 (en) | 2008-11-07 | 2010-05-13 | Applied Materials, Inc. | Laminar flow in a precursor source canister |
-
2011
- 2011-05-31 JP JP2011122689A patent/JP5728772B2/ja active Active
-
2012
- 2012-05-09 TW TW101116485A patent/TWI447258B/zh not_active IP Right Cessation
- 2012-05-09 KR KR1020120048892A patent/KR101398248B1/ko active IP Right Grant
- 2012-05-18 CN CN201210156431.8A patent/CN102808166B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20120134003A (ko) | 2012-12-11 |
TW201303067A (zh) | 2013-01-16 |
KR101398248B1 (ko) | 2014-05-22 |
JP2012251179A (ja) | 2012-12-20 |
TWI447258B (zh) | 2014-08-01 |
CN102808166B (zh) | 2015-01-07 |
CN102808166A (zh) | 2012-12-05 |
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