CN102808166B - 原料气体发生装置 - Google Patents
原料气体发生装置 Download PDFInfo
- Publication number
- CN102808166B CN102808166B CN201210156431.8A CN201210156431A CN102808166B CN 102808166 B CN102808166 B CN 102808166B CN 201210156431 A CN201210156431 A CN 201210156431A CN 102808166 B CN102808166 B CN 102808166B
- Authority
- CN
- China
- Prior art keywords
- unstripped gas
- opening portion
- container
- generating unit
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-122689 | 2011-05-31 | ||
JP2011122689A JP5728772B2 (ja) | 2011-05-31 | 2011-05-31 | 原料ガス発生装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102808166A CN102808166A (zh) | 2012-12-05 |
CN102808166B true CN102808166B (zh) | 2015-01-07 |
Family
ID=47232034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210156431.8A Expired - Fee Related CN102808166B (zh) | 2011-05-31 | 2012-05-18 | 原料气体发生装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5728772B2 (zh) |
KR (1) | KR101398248B1 (zh) |
CN (1) | CN102808166B (zh) |
TW (1) | TWI447258B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6477075B2 (ja) * | 2015-03-17 | 2019-03-06 | 東京エレクトロン株式会社 | 原料ガス供給装置及び成膜装置 |
US10480070B2 (en) * | 2016-05-12 | 2019-11-19 | Versum Materials Us, Llc | Delivery container with flow distributor |
CN106498369B (zh) * | 2017-01-04 | 2019-02-19 | 合肥京东方光电科技有限公司 | 一种容器及用于对显示基板进行修复的修复设备 |
CN110475905A (zh) * | 2017-03-03 | 2019-11-19 | 应用材料公司 | 用于增加来自安瓿的通量的设备 |
KR20230058843A (ko) * | 2021-10-25 | 2023-05-03 | (주)덕산테코피아 | 반도체 제조장비용 캐니스터 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1437219A (zh) * | 2002-02-08 | 2003-08-20 | 东曹精细化工株式会社 | 固体有机金属化合物用填充容器和其填充方法 |
CN101240446A (zh) * | 2006-11-27 | 2008-08-13 | 住友化学株式会社 | 有机金属化合物供给装置 |
CN101981660A (zh) * | 2008-03-31 | 2011-02-23 | 住友化学株式会社 | 有机金属化合物供给装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02124796A (ja) * | 1988-11-02 | 1990-05-14 | Mitsubishi Electric Corp | 固体有機金属供給装置 |
JPH02169023A (ja) * | 1988-12-22 | 1990-06-29 | Mitsubishi Metal Corp | 原料ガス発生器 |
JPH0331477A (ja) * | 1989-06-28 | 1991-02-12 | Oki Electric Ind Co Ltd | Cvd装置用バブラー |
JPH07321040A (ja) * | 1994-05-24 | 1995-12-08 | Nec Corp | 金属化合物収納容器 |
JPH1025576A (ja) * | 1996-04-05 | 1998-01-27 | Dowa Mining Co Ltd | Cvd成膜法における原料化合物の昇華方法 |
ATE298013T1 (de) | 1999-08-20 | 2005-07-15 | Morton Int Inc | Sprudelvorrichtung mit zwei fritten |
US20050249873A1 (en) * | 2004-05-05 | 2005-11-10 | Demetrius Sarigiannis | Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices |
JP4879509B2 (ja) * | 2004-05-21 | 2012-02-22 | 株式会社アルバック | 真空成膜装置 |
JP4609991B2 (ja) * | 2004-11-17 | 2011-01-12 | ルネサスエレクトロニクス株式会社 | 固体原料気化装置 |
JP2006272100A (ja) * | 2005-03-28 | 2006-10-12 | Ishikawajima Harima Heavy Ind Co Ltd | 揮発性物質の揮発供給システム |
JP4873169B2 (ja) | 2007-06-01 | 2012-02-08 | 信越化学工業株式会社 | 固体有機金属化合物の充填方法 |
US20100119734A1 (en) | 2008-11-07 | 2010-05-13 | Applied Materials, Inc. | Laminar flow in a precursor source canister |
-
2011
- 2011-05-31 JP JP2011122689A patent/JP5728772B2/ja active Active
-
2012
- 2012-05-09 TW TW101116485A patent/TWI447258B/zh not_active IP Right Cessation
- 2012-05-09 KR KR1020120048892A patent/KR101398248B1/ko active IP Right Grant
- 2012-05-18 CN CN201210156431.8A patent/CN102808166B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1437219A (zh) * | 2002-02-08 | 2003-08-20 | 东曹精细化工株式会社 | 固体有机金属化合物用填充容器和其填充方法 |
CN101240446A (zh) * | 2006-11-27 | 2008-08-13 | 住友化学株式会社 | 有机金属化合物供给装置 |
CN101981660A (zh) * | 2008-03-31 | 2011-02-23 | 住友化学株式会社 | 有机金属化合物供给装置 |
Non-Patent Citations (1)
Title |
---|
JP平2-124796A 1990.05.14 * |
Also Published As
Publication number | Publication date |
---|---|
TW201303067A (zh) | 2013-01-16 |
KR20120134003A (ko) | 2012-12-11 |
CN102808166A (zh) | 2012-12-05 |
TWI447258B (zh) | 2014-08-01 |
JP5728772B2 (ja) | 2015-06-03 |
JP2012251179A (ja) | 2012-12-20 |
KR101398248B1 (ko) | 2014-05-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: OMRON LASER ADVANCED CO., LTD. Free format text: FORMER OWNER: OMRON CORPORATION Effective date: 20131010 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20131010 Address after: Kanagawa Applicant after: OMRON laser advanced Corporation Address before: Kyoto Japan Applicant before: Omron Corporation |
|
ASS | Succession or assignment of patent right |
Owner name: TECHNOLOGY CO. LTD V. Free format text: FORMER OWNER: OMRON LASER ADVANCED CO., LTD. Effective date: 20140113 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140113 Address after: Kanagawa Applicant after: Technology Co. Ltd V. Address before: Kanagawa Applicant before: OMRON laser advanced Corporation |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150107 Termination date: 20210518 |
|
CF01 | Termination of patent right due to non-payment of annual fee |