JP2005228878A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2005228878A JP2005228878A JP2004035245A JP2004035245A JP2005228878A JP 2005228878 A JP2005228878 A JP 2005228878A JP 2004035245 A JP2004035245 A JP 2004035245A JP 2004035245 A JP2004035245 A JP 2004035245A JP 2005228878 A JP2005228878 A JP 2005228878A
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- fuse
- wiring
- wirings
- return
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000009966 trimming Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000013039 cover film Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
【解決手段】複数のヒューズ配線1に対応する戻し配線4を同一領域に集積して配置する。更に、その戻し配線を積層する。この構成により、ヒューズ配線の間に戻し配線が配置されない領域を設けることが出来、その間を最小配線ピッチでヒューズ配線を配置することが出来る。また、複数段に配置されたヒューズ列と、夫々が複数段のヒューズ列の夫々に信号を供給する複数の接続配線とを有し、隣接するヒューズ列の間の領域にそれ以外のヒューズ列の接続配線を配置しても良い。
【選択図】図1
Description
ヒューズ配線1bと1cの間には、戻し配線が設けられて無い為、最小の配線ピッチBでそれらを設けることが出来る。一方、ヒューズ配線1a及び1bは、その間に戻し配線が配置されている為、ピッチBよりも広いピッチAで設けられている。
2 共通配線
3 カバー膜
4、8、10 戻し配線
5 開口部
6、11 絶縁膜
Claims (9)
- 複数のヒューズ配線と、夫々が前記複数のヒューズ配線の夫々と対応して接続された複数の接続配線とを備え、前記複数のヒューズ配線は1箇所に纏めて配置されていることを特徴とする半導体装置。
- 前記複数の配線は、前記複数のヒューズ配線のうち隣接するヒューズ配線の間に配置されていることを特徴とする請求項1記載の半導体装置。
- 前記接続配線は、多層にて配置する事を特徴とする請求項1記載の半導体装置。
- 隣接したヒューズ配線間に前記接続配線が配置された領域では、ヒューズ配線を第1のピッチで配置し、隣接したヒューズ配線の間に前記接続配線が配置されない領域では、前記第1のピッチよりも狭いピッチでヒューズ配線を配置することを特徴とする請求項1記載の半導体装置。
- 共通配線と、前記共通配線から一方の領域に配置された複数の第1のヒューズ配線と、前記共通配線から他方の領域に配置された複数の第2のヒューズ配線と、前記第1の領域に配置され前記第1のヒューズ配線と接続された回路ブロックと、前記回路ブロックと対応して前記複数の第2のヒューズ配線とを接続する複数の戻し配線とを備え、前記複数の第1のヒューズ配線は、第1のピッチ及び前記第1のピッチよりも狭い第2のピッチでレイアウトされ、前記第2のピッチで配置されたヒューズ配線の間には前記戻し配線は配置されなく、前記第1のピッチで配置されたヒューズ配線の間に前記戻し配線が配置されることを特徴とする半導体装置。
- 前記複数の戻し配線は、前記ヒューズ配線と異なる層で形成されることを特徴とする請求項5記載の半導体装置。
- 前記複数の戻し配線の一部が前記ヒューズ配線と同じ層で形成され、前記複数の戻し配線の他部が前記ヒューズ配線と異なる層で形成されることを特徴とする請求項5記載の半導体装置。
- 第1の方向に延在して設けられた第1の配線と、前記第1の配線と垂直な方向に延在し且つ前記第1の配線と交わり、夫々が前記第1の配線と接続された複数のヒューズ配線と、前記第2のヒューズ配線と平行に設けられ、前記ヒューズ配線と対応して電気的に接続するように設けられた複数の第2の配線とを有し、前記複数の第2の配線のうち少なくとも二つの前記第2の配線が隣接するヒューズ配線の間に設けられていることを特徴とする半導体装置。
- 複数段に配置されたヒューズ列と、夫々が前記複数段のヒューズ列の夫々に信号を供給する複数の接続配線とを有し、隣接するヒューズ列の間の領域にそれ以外のヒューズ列の接続配線を配置したことを特徴とする半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004035245A JP4511211B2 (ja) | 2004-02-12 | 2004-02-12 | 半導体装置 |
US11/050,708 US7361967B2 (en) | 2004-02-12 | 2005-02-07 | Semiconductor device with fuse wires and connection wires |
CNB2005100094300A CN100442499C (zh) | 2004-02-12 | 2005-02-16 | 半导体器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004035245A JP4511211B2 (ja) | 2004-02-12 | 2004-02-12 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005228878A true JP2005228878A (ja) | 2005-08-25 |
JP4511211B2 JP4511211B2 (ja) | 2010-07-28 |
Family
ID=34836205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004035245A Expired - Fee Related JP4511211B2 (ja) | 2004-02-12 | 2004-02-12 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7361967B2 (ja) |
JP (1) | JP4511211B2 (ja) |
CN (1) | CN100442499C (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7888770B2 (en) | 2006-08-11 | 2011-02-15 | Samsung Electronics Co., Ltd. | Fuse box for semiconductor device and method of forming same |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100725368B1 (ko) * | 2005-12-07 | 2007-06-07 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
JP4964472B2 (ja) * | 2006-01-31 | 2012-06-27 | 半導体特許株式会社 | 半導体装置 |
KR101043841B1 (ko) * | 2008-10-14 | 2011-06-22 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 퓨즈 |
US8509022B2 (en) * | 2008-12-26 | 2013-08-13 | SK Hynix Inc. | Fuse set and semiconductor integrated circuit apparatus having the same |
KR101177968B1 (ko) * | 2009-03-04 | 2012-08-28 | 에스케이하이닉스 주식회사 | 고집적 반도체 장치를 위한 퓨즈 |
CN109830197B (zh) * | 2019-01-17 | 2022-03-15 | 昆山国显光电有限公司 | 一种测试导线排版结构、显示面板和显示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002075810A2 (de) * | 2001-03-15 | 2002-09-26 | Infineon Technologies Ag | Integrierte schaltung mit elektrischen verbindungselementen |
JP2003142582A (ja) * | 2001-10-31 | 2003-05-16 | Toshiba Corp | 半導体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4225708B2 (ja) | 2001-06-12 | 2009-02-18 | 株式会社東芝 | 半導体装置 |
DE10231206B4 (de) * | 2002-07-10 | 2014-10-30 | Qimonda Ag | Halbleitervorrichtung |
-
2004
- 2004-02-12 JP JP2004035245A patent/JP4511211B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-07 US US11/050,708 patent/US7361967B2/en not_active Expired - Fee Related
- 2005-02-16 CN CNB2005100094300A patent/CN100442499C/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002075810A2 (de) * | 2001-03-15 | 2002-09-26 | Infineon Technologies Ag | Integrierte schaltung mit elektrischen verbindungselementen |
JP2003142582A (ja) * | 2001-10-31 | 2003-05-16 | Toshiba Corp | 半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7888770B2 (en) | 2006-08-11 | 2011-02-15 | Samsung Electronics Co., Ltd. | Fuse box for semiconductor device and method of forming same |
Also Published As
Publication number | Publication date |
---|---|
US7361967B2 (en) | 2008-04-22 |
CN100442499C (zh) | 2008-12-10 |
JP4511211B2 (ja) | 2010-07-28 |
CN1655350A (zh) | 2005-08-17 |
US20050181680A1 (en) | 2005-08-18 |
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