JP2005175381A - 半導体素子、アレイ基板およびその製造方法 - Google Patents

半導体素子、アレイ基板およびその製造方法 Download PDF

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Publication number
JP2005175381A
JP2005175381A JP2003416676A JP2003416676A JP2005175381A JP 2005175381 A JP2005175381 A JP 2005175381A JP 2003416676 A JP2003416676 A JP 2003416676A JP 2003416676 A JP2003416676 A JP 2003416676A JP 2005175381 A JP2005175381 A JP 2005175381A
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JP
Japan
Prior art keywords
layer
wiring
interlayer insulating
array substrate
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003416676A
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English (en)
Japanese (ja)
Inventor
Tetsuya Kawamura
哲也 川村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Central Inc
Original Assignee
Toshiba Matsushita Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Matsushita Display Technology Co Ltd filed Critical Toshiba Matsushita Display Technology Co Ltd
Priority to JP2003416676A priority Critical patent/JP2005175381A/ja
Priority to US10/997,934 priority patent/US7095048B2/en
Priority to SG200407617A priority patent/SG113002A1/en
Priority to TW093136951A priority patent/TW200530664A/zh
Priority to KR1020040105284A priority patent/KR100693236B1/ko
Priority to CNA2004101020422A priority patent/CN1629706A/zh
Publication of JP2005175381A publication Critical patent/JP2005175381A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003416676A 2003-12-15 2003-12-15 半導体素子、アレイ基板およびその製造方法 Pending JP2005175381A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003416676A JP2005175381A (ja) 2003-12-15 2003-12-15 半導体素子、アレイ基板およびその製造方法
US10/997,934 US7095048B2 (en) 2003-12-15 2004-11-29 Semiconductor device, electronic circuit array substrate provided with the same and method of manufacturing the electronic circuit array substrate
SG200407617A SG113002A1 (en) 2003-12-15 2004-11-29 Semiconductor device, electronic circuit array substrate provided with the same and method of manufacturing the electronic circuit array substrate
TW093136951A TW200530664A (en) 2003-12-15 2004-11-30 Semiconductor device, semiconductor device array substrate and method of manufacturing the same
KR1020040105284A KR100693236B1 (ko) 2003-12-15 2004-12-14 반도체 소자 어레이 기판 및 그 제조 방법
CNA2004101020422A CN1629706A (zh) 2003-12-15 2004-12-15 半导体元件、半导体元件阵列基板及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003416676A JP2005175381A (ja) 2003-12-15 2003-12-15 半導体素子、アレイ基板およびその製造方法

Publications (1)

Publication Number Publication Date
JP2005175381A true JP2005175381A (ja) 2005-06-30

Family

ID=34650637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003416676A Pending JP2005175381A (ja) 2003-12-15 2003-12-15 半導体素子、アレイ基板およびその製造方法

Country Status (6)

Country Link
US (1) US7095048B2 (enExample)
JP (1) JP2005175381A (enExample)
KR (1) KR100693236B1 (enExample)
CN (1) CN1629706A (enExample)
SG (1) SG113002A1 (enExample)
TW (1) TW200530664A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8390769B2 (en) 2009-09-25 2013-03-05 Samsung Display Co., Ltd. Liquid crystal display
WO2014115810A1 (ja) * 2013-01-25 2014-07-31 シャープ株式会社 半導体装置
CN112713139A (zh) * 2020-12-28 2021-04-27 上海天马有机发光显示技术有限公司 柔性显示面板及柔性显示装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340695A (ja) * 2004-05-31 2005-12-08 Hitachi Displays Ltd 表示装置の製造方法
EP1987762A1 (de) * 2007-05-03 2008-11-05 F.Hoffmann-La Roche Ag Oximeter
KR20130007003A (ko) 2011-06-28 2013-01-18 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
KR102441560B1 (ko) * 2015-04-07 2022-09-08 삼성디스플레이 주식회사 박막트랜지스터 어레이 기판 및 이를 구비한 유기 발광 표시 장치
US20170062456A1 (en) * 2015-08-31 2017-03-02 Cypress Semiconductor Corporation Vertical division of three-dimensional memory device
KR102500799B1 (ko) * 2018-03-09 2023-02-20 삼성디스플레이 주식회사 트랜지스터 기판 및 이를 구비하는 표시 장치
JP2020009883A (ja) * 2018-07-06 2020-01-16 ソニーセミコンダクタソリューションズ株式会社 受光素子、測距モジュール、および、電子機器
TWI717972B (zh) * 2020-01-14 2021-02-01 友達光電股份有限公司 主動陣列基板及其製造方法
CN112909020B (zh) * 2021-01-21 2023-04-07 武汉华星光电半导体显示技术有限公司 显示面板及显示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0156178B1 (ko) * 1995-10-20 1998-11-16 구자홍 액정표시 소자의 제조방법
KR100430773B1 (ko) * 1998-07-14 2004-05-10 가부시끼가이샤 도시바 액티브 매트릭스형 액정표시장치
JP3969510B2 (ja) 1998-08-31 2007-09-05 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタアレイ基板および液晶表示装置
JP2003280020A (ja) * 2002-03-22 2003-10-02 Seiko Epson Corp 電気光学装置及びその製造方法並びに電子機器

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8390769B2 (en) 2009-09-25 2013-03-05 Samsung Display Co., Ltd. Liquid crystal display
WO2014115810A1 (ja) * 2013-01-25 2014-07-31 シャープ株式会社 半導体装置
CN112713139A (zh) * 2020-12-28 2021-04-27 上海天马有机发光显示技术有限公司 柔性显示面板及柔性显示装置
CN112713139B (zh) * 2020-12-28 2024-04-02 武汉天马微电子有限公司 柔性显示面板及柔性显示装置

Also Published As

Publication number Publication date
US20050127358A1 (en) 2005-06-16
SG113002A1 (en) 2005-07-28
CN1629706A (zh) 2005-06-22
KR100693236B1 (ko) 2007-03-12
KR20050060005A (ko) 2005-06-21
US7095048B2 (en) 2006-08-22
TW200530664A (en) 2005-09-16
TWI312085B (enExample) 2009-07-11

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