KR100693236B1 - 반도체 소자 어레이 기판 및 그 제조 방법 - Google Patents
반도체 소자 어레이 기판 및 그 제조 방법 Download PDFInfo
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- KR100693236B1 KR100693236B1 KR1020040105284A KR20040105284A KR100693236B1 KR 100693236 B1 KR100693236 B1 KR 100693236B1 KR 1020040105284 A KR1020040105284 A KR 1020040105284A KR 20040105284 A KR20040105284 A KR 20040105284A KR 100693236 B1 KR100693236 B1 KR 100693236B1
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- interlayer insulating
- insulating film
- gate electrode
- array substrate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims abstract description 112
- 239000011229 interlayer Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims description 18
- 239000011247 coating layer Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 abstract description 118
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- 230000006378 damage Effects 0.000 description 6
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (8)
- 삭제
- 투광성 기판 상에 형성된 반도체층과, 상기 반도체층 상에 게이트 절연막을 개재하여 형성된 게이트 전극 배선층과, 상기 게이트 전극 배선층 상에 형성된 층간 절연층과, 상기 층간 절연층 및 상기 게이트 절연막의 각각에 형성되고 상기 반도체층에 연통하여 개구하는 제1 개구부와, 상기 층간 절연층에 형성되고 상기 게이트 전극 배선층에 연통하여 개구하는 제2 개구부를 포함하고,상기 층간 절연층, 상기 제1 개구부 및 상기 제2 개구부는 세정되어 있는 것을 특징으로 하는 반도체 소자 어레이 기판.
- 제2항에 있어서,투광성 기판은 복수의 표시 도트를 갖고,제2 개구부는 상기 복수의 표시 도트를 구비한 표시부에 형성되어 있는 것을 특징으로 하는 반도체 소자 어레이 기판.
- 제2항에 있어서,투광성 기판은 복수의 표시 도트를 갖고,제2 개구부는 하나의 상기 표시 도트마다 형성되어 있는 것을 특징으로 하는 반도체 소자 어레이 기판.
- 제3항에 있어서,투광성 기판은 적어도 2 이상의 색 단위의 표시 도트를 갖는 복수의 화소를 구비하고,제2 개구부는 상기 화소 단위로 형성되어 있는 것을 특징으로 한 반도체 소자 어레이 기판.
- 제2항 내지 제5항 중 어느 한 항에 있어서,층간 절연층에 형성된 제2 개구부를 피복하는 피복층을 포함하는 것을 특징으로 하는 반도체 소자 어레이 기판.
- 제6항에 있어서,반도체층에 전기적으로 접속되는 신호 배선층을 포함하고,상기 피복층은 상기 신호 배선층과 동일 공정에서 형성되어 있는 것을 특징으로 하는 반도체 소자 어레이 기판.
- 투광성 기판 상에 반도체층이 형성되고, 상기 반도체층 상에 게이트 절연막을 개재하여 게이트 전극 배선층이 형성되고, 상기 게이트 전극 배선층 상에 층간 절연층이 형성된 반도체 소자 어레이 기판의 제조 방법으로서,상기 반도체 소자 어레이 기판의 상기 층간 절연층 및 상기 게이트 절연막의 각각에 상기 반도체층에 연통하여 개구하는 제1 개구부를 형성함과 함께, 상기 반도체 소자 어레이 기판의 층간 절연층에 상기 게이트 전극 배선층에 연통하여 개구하는 제2 개구부를 형성하고 나서, 상기 반도체 소자 어레이 기판의 층간 절연층 측을 세정하는 것을 특징으로 하는 반도체 소자 어레이 기판의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00416676 | 2003-12-15 | ||
JP2003416676A JP2005175381A (ja) | 2003-12-15 | 2003-12-15 | 半導体素子、アレイ基板およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050060005A KR20050060005A (ko) | 2005-06-21 |
KR100693236B1 true KR100693236B1 (ko) | 2007-03-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020040105284A KR100693236B1 (ko) | 2003-12-15 | 2004-12-14 | 반도체 소자 어레이 기판 및 그 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7095048B2 (ko) |
JP (1) | JP2005175381A (ko) |
KR (1) | KR100693236B1 (ko) |
CN (1) | CN1629706A (ko) |
SG (1) | SG113002A1 (ko) |
TW (1) | TW200530664A (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005340695A (ja) * | 2004-05-31 | 2005-12-08 | Hitachi Displays Ltd | 表示装置の製造方法 |
EP1987762A1 (de) * | 2007-05-03 | 2008-11-05 | F.Hoffmann-La Roche Ag | Oximeter |
KR101566431B1 (ko) | 2009-09-25 | 2015-11-06 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR20130007003A (ko) | 2011-06-28 | 2013-01-18 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
CN104956475B (zh) * | 2013-01-25 | 2017-08-29 | 夏普株式会社 | 半导体装置 |
KR102441560B1 (ko) * | 2015-04-07 | 2022-09-08 | 삼성디스플레이 주식회사 | 박막트랜지스터 어레이 기판 및 이를 구비한 유기 발광 표시 장치 |
US20170062456A1 (en) * | 2015-08-31 | 2017-03-02 | Cypress Semiconductor Corporation | Vertical division of three-dimensional memory device |
KR102500799B1 (ko) * | 2018-03-09 | 2023-02-20 | 삼성디스플레이 주식회사 | 트랜지스터 기판 및 이를 구비하는 표시 장치 |
JP2020009883A (ja) * | 2018-07-06 | 2020-01-16 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、測距モジュール、および、電子機器 |
TWI717972B (zh) * | 2020-01-14 | 2021-02-01 | 友達光電股份有限公司 | 主動陣列基板及其製造方法 |
CN112713139B (zh) * | 2020-12-28 | 2024-04-02 | 武汉天马微电子有限公司 | 柔性显示面板及柔性显示装置 |
CN112909020B (zh) * | 2021-01-21 | 2023-04-07 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000075321A (ja) | 1998-08-31 | 2000-03-14 | Furontekku:Kk | 薄膜トランジスタアレイ基板および液晶表示装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR0156178B1 (ko) * | 1995-10-20 | 1998-11-16 | 구자홍 | 액정표시 소자의 제조방법 |
KR100430773B1 (ko) * | 1998-07-14 | 2004-05-10 | 가부시끼가이샤 도시바 | 액티브 매트릭스형 액정표시장치 |
JP2003280020A (ja) * | 2002-03-22 | 2003-10-02 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
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2003
- 2003-12-15 JP JP2003416676A patent/JP2005175381A/ja active Pending
-
2004
- 2004-11-29 US US10/997,934 patent/US7095048B2/en active Active
- 2004-11-29 SG SG200407617A patent/SG113002A1/en unknown
- 2004-11-30 TW TW093136951A patent/TW200530664A/zh unknown
- 2004-12-14 KR KR1020040105284A patent/KR100693236B1/ko not_active IP Right Cessation
- 2004-12-15 CN CNA2004101020422A patent/CN1629706A/zh active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000075321A (ja) | 1998-08-31 | 2000-03-14 | Furontekku:Kk | 薄膜トランジスタアレイ基板および液晶表示装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20050060005A (ko) | 2005-06-21 |
TWI312085B (ko) | 2009-07-11 |
US7095048B2 (en) | 2006-08-22 |
SG113002A1 (en) | 2005-07-28 |
CN1629706A (zh) | 2005-06-22 |
TW200530664A (en) | 2005-09-16 |
JP2005175381A (ja) | 2005-06-30 |
US20050127358A1 (en) | 2005-06-16 |
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