CN112713139B - 柔性显示面板及柔性显示装置 - Google Patents
柔性显示面板及柔性显示装置 Download PDFInfo
- Publication number
- CN112713139B CN112713139B CN202011584085.4A CN202011584085A CN112713139B CN 112713139 B CN112713139 B CN 112713139B CN 202011584085 A CN202011584085 A CN 202011584085A CN 112713139 B CN112713139 B CN 112713139B
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- layer
- thin film
- film transistor
- display panel
- flexible display
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- 239000010410 layer Substances 0.000 claims abstract description 228
- 239000010409 thin film Substances 0.000 claims abstract description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 84
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 84
- 239000010703 silicon Substances 0.000 claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 239000011241 protective layer Substances 0.000 claims abstract description 65
- 239000000126 substance Substances 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000004020 conductor Substances 0.000 claims abstract description 34
- 238000004806 packaging method and process Methods 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 239000011888 foil Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000012795 verification Methods 0.000 description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011584085.4A CN112713139B (zh) | 2020-12-28 | 2020-12-28 | 柔性显示面板及柔性显示装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011584085.4A CN112713139B (zh) | 2020-12-28 | 2020-12-28 | 柔性显示面板及柔性显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112713139A CN112713139A (zh) | 2021-04-27 |
CN112713139B true CN112713139B (zh) | 2024-04-02 |
Family
ID=75545943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011584085.4A Active CN112713139B (zh) | 2020-12-28 | 2020-12-28 | 柔性显示面板及柔性显示装置 |
Country Status (1)
Country | Link |
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CN (1) | CN112713139B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113539132A (zh) * | 2021-07-28 | 2021-10-22 | Oppo广东移动通信有限公司 | 显示模组与电子设备 |
CN113809135B (zh) * | 2021-09-13 | 2024-03-05 | 武汉天马微电子有限公司 | 一种显示面板及显示装置 |
CN115172390B (zh) * | 2022-09-02 | 2022-12-02 | 罗化芯显示科技开发(江苏)有限公司 | 一种显示面板及其制造方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004220907A (ja) * | 2003-01-15 | 2004-08-05 | Dainippon Printing Co Ltd | 有機elディスプレイおよびディスプレイ用透明電極基板 |
JP2005175381A (ja) * | 2003-12-15 | 2005-06-30 | Toshiba Matsushita Display Technology Co Ltd | 半導体素子、アレイ基板およびその製造方法 |
EP3007224A1 (en) * | 2014-10-08 | 2016-04-13 | Nxp B.V. | Metallisation for semiconductor device |
CN106783842A (zh) * | 2017-01-04 | 2017-05-31 | 京东方科技集团股份有限公司 | 一种静电保护电路、阵列基板、显示面板及显示装置 |
CN106887525A (zh) * | 2017-03-10 | 2017-06-23 | 上海天马有机发光显示技术有限公司 | 一种有机发光显示面板及显示装置 |
KR20170109118A (ko) * | 2016-03-17 | 2017-09-28 | 삼성디스플레이 주식회사 | 정전기 방전 회로를 갖는 표시 장치, 및 이의 제조 방법 |
CN107845645A (zh) * | 2017-09-28 | 2018-03-27 | 上海天马微电子有限公司 | 一种显示面板和显示装置 |
CN109686866A (zh) * | 2019-01-29 | 2019-04-26 | 武汉天马微电子有限公司 | 显示面板和显示装置 |
CN110970578A (zh) * | 2019-12-31 | 2020-04-07 | 厦门天马微电子有限公司 | 一种显示面板及其制作方法、显示装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180190720A1 (en) * | 2017-01-03 | 2018-07-05 | Innolux Corporation | Touch display device |
-
2020
- 2020-12-28 CN CN202011584085.4A patent/CN112713139B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004220907A (ja) * | 2003-01-15 | 2004-08-05 | Dainippon Printing Co Ltd | 有機elディスプレイおよびディスプレイ用透明電極基板 |
JP2005175381A (ja) * | 2003-12-15 | 2005-06-30 | Toshiba Matsushita Display Technology Co Ltd | 半導体素子、アレイ基板およびその製造方法 |
EP3007224A1 (en) * | 2014-10-08 | 2016-04-13 | Nxp B.V. | Metallisation for semiconductor device |
KR20170109118A (ko) * | 2016-03-17 | 2017-09-28 | 삼성디스플레이 주식회사 | 정전기 방전 회로를 갖는 표시 장치, 및 이의 제조 방법 |
CN106783842A (zh) * | 2017-01-04 | 2017-05-31 | 京东方科技集团股份有限公司 | 一种静电保护电路、阵列基板、显示面板及显示装置 |
CN106887525A (zh) * | 2017-03-10 | 2017-06-23 | 上海天马有机发光显示技术有限公司 | 一种有机发光显示面板及显示装置 |
CN107845645A (zh) * | 2017-09-28 | 2018-03-27 | 上海天马微电子有限公司 | 一种显示面板和显示装置 |
CN109686866A (zh) * | 2019-01-29 | 2019-04-26 | 武汉天马微电子有限公司 | 显示面板和显示装置 |
CN110970578A (zh) * | 2019-12-31 | 2020-04-07 | 厦门天马微电子有限公司 | 一种显示面板及其制作方法、显示装置 |
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Publication number | Publication date |
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CN112713139A (zh) | 2021-04-27 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 201201 No. 3809, Lingkong North Road, Pudong New Area, Shanghai Applicant after: SHANGHAI TIANMA AM-OLED Co.,Ltd. Address before: Room 509, building 1, No. 6111, Longdong Avenue, Pudong New Area, Shanghai, 201200 Applicant before: SHANGHAI TIANMA AM-OLED Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20211025 Address after: No.8, liufangyuan Henglu, Donghu New Technology Development Zone, Wuhan City, Hubei Province Applicant after: WUHAN TIANMA MICRO-ELECTRONICS Co.,Ltd. Applicant after: Wuhan Tianma Microelectronics Co.,Ltd. Shanghai Branch Address before: 201201 No. 3809, Lingkong North Road, Pudong New Area, Shanghai Applicant before: SHANGHAI TIANMA AM-OLED Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |