JP2005086024A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2005086024A
JP2005086024A JP2003317259A JP2003317259A JP2005086024A JP 2005086024 A JP2005086024 A JP 2005086024A JP 2003317259 A JP2003317259 A JP 2003317259A JP 2003317259 A JP2003317259 A JP 2003317259A JP 2005086024 A JP2005086024 A JP 2005086024A
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layer
semiconductor
source
insulating layer
semiconductor layer
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Pending
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JP2003317259A
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English (en)
Japanese (ja)
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JP2005086024A5 (https=
Inventor
Minoru Fujiwara
実 藤原
Akira Sotozono
明 外園
Kazunari Ishimaru
一成 石丸
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2003317259A priority Critical patent/JP2005086024A/ja
Priority to US10/775,017 priority patent/US7129550B2/en
Priority to TW093125779A priority patent/TWI253754B/zh
Publication of JP2005086024A publication Critical patent/JP2005086024A/ja
Priority to US11/388,523 priority patent/US20060166456A1/en
Publication of JP2005086024A5 publication Critical patent/JP2005086024A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Thin Film Transistor (AREA)
JP2003317259A 2003-09-09 2003-09-09 半導体装置及びその製造方法 Pending JP2005086024A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003317259A JP2005086024A (ja) 2003-09-09 2003-09-09 半導体装置及びその製造方法
US10/775,017 US7129550B2 (en) 2003-09-09 2004-02-09 Fin-shaped semiconductor device
TW093125779A TWI253754B (en) 2003-09-09 2004-08-27 Semiconductor apparatus and manufacturing method thereof
US11/388,523 US20060166456A1 (en) 2003-09-09 2006-03-25 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003317259A JP2005086024A (ja) 2003-09-09 2003-09-09 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2005086024A true JP2005086024A (ja) 2005-03-31
JP2005086024A5 JP2005086024A5 (https=) 2006-06-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003317259A Pending JP2005086024A (ja) 2003-09-09 2003-09-09 半導体装置及びその製造方法

Country Status (3)

Country Link
US (2) US7129550B2 (https=)
JP (1) JP2005086024A (https=)
TW (1) TWI253754B (https=)

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KR100691006B1 (ko) 2005-04-29 2007-03-09 주식회사 하이닉스반도체 메모리 소자의 셀 트랜지스터 구조 및 그 제조방법
JP2008034427A (ja) * 2006-07-26 2008-02-14 Elpida Memory Inc 半導体装置及びその製造方法
JP2008053725A (ja) * 2006-08-23 2008-03-06 Interuniv Micro Electronica Centrum Vzw フィンベース半導体デバイスのドーピング方法
JP2008117838A (ja) * 2006-11-01 2008-05-22 Elpida Memory Inc 半導体装置及びその製造方法
KR100871712B1 (ko) 2007-07-10 2008-12-08 삼성전자주식회사 전계효과 트랜지스터 및 그의 제조 방법
JP2009021456A (ja) * 2007-07-13 2009-01-29 Renesas Technology Corp フィン型トランジスタおよびその形成方法
JP2009503893A (ja) * 2005-08-03 2009-01-29 インターナショナル・ビジネス・マシーンズ・コーポレーション フィン型電界効果トランジスタ
JP2010079038A (ja) * 2008-09-26 2010-04-08 Seiko Epson Corp 電気光学装置及び電子機器並びにトランジスタ
US7723797B2 (en) 2007-08-31 2010-05-25 Samsung Electronics Co., Ltd.. Fin field effect transistor and method of manufacturing the same
US7781274B2 (en) 2008-03-27 2010-08-24 Kabushiki Kaisha Toshiba Multi-gate field effect transistor and method for manufacturing the same
JP2010530623A (ja) * 2007-06-20 2010-09-09 インターナショナル・ビジネス・マシーンズ・コーポレーション 自己整合したソース／ドレイン領域を有するフィン型電界効果トランジスタ・デバイスおよびその形成方法
US7915693B2 (en) 2007-07-27 2011-03-29 Kabushiki Kaisha Toshiba Semiconductor device with fin and silicide structure
KR20110049709A (ko) * 2009-11-03 2011-05-12 인터내셔널 비지네스 머신즈 코포레이션 배향된 주입에 의한 ｆｉｎＦＥＴ 스페이서 형성
US8269271B2 (en) 2009-04-23 2012-09-18 Renesas Electronics Corporation Hybrid planarFET and FinFET provided on a chip
US8362574B2 (en) 2010-06-04 2013-01-29 Kabushiki Kaisha Toshiba Faceted EPI shape and half-wrap around silicide in S/D merged FinFET
CN104637818A (zh) * 2013-11-14 2015-05-20 国际商业机器公司 用于制造鳍片场效应晶体管器件的方法和鳍片场效应晶体管器件
JP2015517737A (ja) * 2012-05-15 2015-06-22 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 半導体デバイスの電気的短絡を防止するための方法
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KR20220001469A (ko) * 2020-06-29 2022-01-05 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 퇴적 윈도우 확장
JP2023544048A (ja) * 2020-10-04 2023-10-19 アプライド マテリアルズ インコーポレイテッド ゲルマニウムの選択的堆積
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KR20050108916A (ko) * 2004-05-14 2005-11-17 삼성전자주식회사 다마신 공정을 이용한 핀 전계 효과 트랜지스터의 형성 방법
JP2006013303A (ja) * 2004-06-29 2006-01-12 Toshiba Corp 半導体装置及びその製造方法
KR100614800B1 (ko) * 2004-12-10 2006-08-22 삼성전자주식회사 복수개의 돌출된 채널을 갖는 트랜지스터의 제조 방법
JP2006196646A (ja) * 2005-01-13 2006-07-27 Renesas Technology Corp 半導体装置及びその製造方法
JP2006261188A (ja) * 2005-03-15 2006-09-28 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
KR100594327B1 (ko) * 2005-03-24 2006-06-30 삼성전자주식회사 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법
KR100696197B1 (ko) * 2005-09-27 2007-03-20 한국전자통신연구원 실리콘 기판을 이용한 다중 게이트 모스 트랜지스터 및 그제조 방법
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JP4282699B2 (ja) * 2006-09-01 2009-06-24 株式会社東芝 半導体装置
KR100801063B1 (ko) * 2006-10-02 2008-02-04 삼성전자주식회사 게이트 올 어라운드형 반도체 장치 및 그 제조 방법
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