JP2004530159A - 深紫外線リソグラフィー用のフォトレジスト組成物 - Google Patents
深紫外線リソグラフィー用のフォトレジスト組成物 Download PDFInfo
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- JP2004530159A JP2004530159A JP2002589881A JP2002589881A JP2004530159A JP 2004530159 A JP2004530159 A JP 2004530159A JP 2002589881 A JP2002589881 A JP 2002589881A JP 2002589881 A JP2002589881 A JP 2002589881A JP 2004530159 A JP2004530159 A JP 2004530159A
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 112
- 239000000203 mixture Substances 0.000 title claims abstract description 72
- 238000000276 deep-ultraviolet lithography Methods 0.000 title 1
- 229920001577 copolymer Polymers 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 22
- 125000004093 cyano group Chemical group *C#N 0.000 claims abstract description 20
- 239000002904 solvent Substances 0.000 claims abstract description 18
- 125000004122 cyclic group Chemical group 0.000 claims abstract description 11
- -1 perfluoroalkyl ester Chemical class 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 25
- 239000011248 coating agent Substances 0.000 claims description 24
- 239000000178 monomer Substances 0.000 claims description 22
- 125000000217 alkyl group Chemical group 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 13
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 238000004090 dissolution Methods 0.000 claims description 5
- 239000003112 inhibitor Substances 0.000 claims description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 4
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 4
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- 125000003118 aryl group Chemical group 0.000 claims description 4
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- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 4
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 4
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- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 3
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 claims description 3
- 125000005647 linker group Chemical group 0.000 claims description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 3
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- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
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- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical class CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 2
- 150000008065 acid anhydrides Chemical class 0.000 claims description 2
- 125000004448 alkyl carbonyl group Chemical group 0.000 claims description 2
- 125000005907 alkyl ester group Chemical group 0.000 claims description 2
- 125000004390 alkyl sulfonyl group Chemical group 0.000 claims description 2
- 125000004422 alkyl sulphonamide group Chemical group 0.000 claims description 2
- 125000002933 cyclohexyloxy group Chemical group C1(CCCCC1)O* 0.000 claims description 2
- 239000012954 diazonium Substances 0.000 claims description 2
- 150000001989 diazonium salts Chemical group 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 2
- 150000002596 lactones Chemical class 0.000 claims description 2
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- 150000003440 styrenes Chemical class 0.000 claims description 2
- 229940124530 sulfonamide Drugs 0.000 claims description 2
- 150000003456 sulfonamides Chemical class 0.000 claims description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 2
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- 125000005934 tert-pentyloxycarbonyl group Chemical group 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 3
- OZJPLYNZGCXSJM-UHFFFAOYSA-N 5-valerolactone Chemical compound O=C1CCCCO1 OZJPLYNZGCXSJM-UHFFFAOYSA-N 0.000 claims 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 2
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims 1
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 150000003457 sulfones Chemical class 0.000 claims 1
- 150000003459 sulfonic acid esters Chemical class 0.000 claims 1
- XIANSMCQYNJQIH-UHFFFAOYSA-N triphenyl-lambda3-iodane hydrate Chemical compound O.C1=CC=CC=C1I(C=1C=CC=CC=1)C1=CC=CC=C1 XIANSMCQYNJQIH-UHFFFAOYSA-N 0.000 claims 1
- 229920000642 polymer Polymers 0.000 abstract description 61
- 150000001875 compounds Chemical class 0.000 abstract description 19
- 150000001491 aromatic compounds Chemical class 0.000 abstract description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 45
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 32
- 238000006243 chemical reaction Methods 0.000 description 25
- 239000000243 solution Substances 0.000 description 24
- 239000004809 Teflon Substances 0.000 description 22
- 229920006362 Teflon® Polymers 0.000 description 22
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 239000002585 base Substances 0.000 description 14
- 238000003756 stirring Methods 0.000 description 12
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 8
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- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 7
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 5
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
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- VLLPVDKADBYKLM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate;triphenylsulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 VLLPVDKADBYKLM-UHFFFAOYSA-M 0.000 description 3
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- 238000007796 conventional method Methods 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- ORPDKMPYOLFUBA-UHFFFAOYSA-M diphenyliodanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ORPDKMPYOLFUBA-UHFFFAOYSA-M 0.000 description 1
- UEQLWHWHNVZWAF-UHFFFAOYSA-M diphenyliodanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[I+]C1=CC=CC=C1 UEQLWHWHNVZWAF-UHFFFAOYSA-M 0.000 description 1
- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- IZJVVXCHJIQVOL-UHFFFAOYSA-N nitro(phenyl)methanesulfonic acid Chemical class OS(=O)(=O)C([N+]([O-])=O)C1=CC=CC=C1 IZJVVXCHJIQVOL-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- CIKZJZIPTDPBCW-UHFFFAOYSA-N tert-butyl bicyclo[2.2.1]hept-2-ene-4-carboxylate Chemical compound C1CC2C=CC1(C(=O)OC(C)(C)C)C2 CIKZJZIPTDPBCW-UHFFFAOYSA-N 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- LPSXSORODABQKT-UHFFFAOYSA-N tetrahydrodicyclopentadiene Chemical group C1C2CCC1C1C2CCC1 LPSXSORODABQKT-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 238000006276 transfer reaction Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- AVMDXXIEGYYSAM-UHFFFAOYSA-N tricyclo[5.4.0.02,6]undecane Chemical compound C1CCCC2C3CCCC3C21 AVMDXXIEGYYSAM-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/853,732 US6737215B2 (en) | 2001-05-11 | 2001-05-11 | Photoresist composition for deep ultraviolet lithography |
| PCT/EP2002/004558 WO2002093263A1 (en) | 2001-05-11 | 2002-04-25 | Photoresist composition for deep ultraviolet lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004530159A true JP2004530159A (ja) | 2004-09-30 |
| JP2004530159A5 JP2004530159A5 (enExample) | 2008-01-31 |
Family
ID=25316757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002589881A Pending JP2004530159A (ja) | 2001-05-11 | 2002-04-25 | 深紫外線リソグラフィー用のフォトレジスト組成物 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6737215B2 (enExample) |
| EP (1) | EP1388027A1 (enExample) |
| JP (1) | JP2004530159A (enExample) |
| KR (1) | KR20040029976A (enExample) |
| CN (1) | CN100335972C (enExample) |
| MY (1) | MY128511A (enExample) |
| TW (1) | TWI242106B (enExample) |
| WO (1) | WO2002093263A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014050905A1 (ja) * | 2012-09-28 | 2014-04-03 | 富士フイルム株式会社 | パターン形成用自己組織化組成物、それを用いたブロックコポリマーの自己組織化によるパターン形成方法、及びパターン |
| KR20210105395A (ko) * | 2018-12-19 | 2021-08-26 | 아르끄마 프랑스 | 시아노아크릴레이트 및 하나 이상의 블록 공중합체를 포함하는 조성물 |
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|---|---|---|---|---|
| US7579308B2 (en) | 1998-07-06 | 2009-08-25 | Ekc/Dupont Electronics Technologies | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| JP4838437B2 (ja) * | 2000-06-16 | 2011-12-14 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| US6635401B2 (en) * | 2001-06-21 | 2003-10-21 | International Business Machines Corporation | Resist compositions with polymers having 2-cyano acrylic monomer |
| DE10131670A1 (de) * | 2001-06-29 | 2003-01-16 | Infineon Technologies Ag | Fotoresists mit Reaktionsankern für eine chemische Nachverstärkung von Resiststrukturen für Belichtungen bei 157 nm |
| US7543592B2 (en) * | 2001-12-04 | 2009-06-09 | Ekc Technology, Inc. | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| US6800416B2 (en) * | 2002-01-09 | 2004-10-05 | Clariant Finance (Bvi) Ltd. | Negative deep ultraviolet photoresist |
| US20050227183A1 (en) * | 2002-01-11 | 2005-10-13 | Mark Wagner | Compositions and methods for image development of conventional chemically amplified photoresists |
| DE10203839B4 (de) * | 2002-01-31 | 2007-10-18 | Infineon Technologies Ag | Resist für die Fotolithografie mit reaktiven Gruppen für eine nachträgliche Modifikation der Resiststrukturen |
| EP1551886B1 (en) * | 2002-08-19 | 2008-09-10 | E.I. Du Pont De Nemours And Company | Fluorinated polymers useful as photoresists, and processes for microlithography |
| AU2003277582A1 (en) * | 2002-11-07 | 2004-06-07 | Asahi Glass Company, Limited | Fluoropolymer |
| US6919167B2 (en) * | 2002-11-14 | 2005-07-19 | Micell Technologies | Positive tone lithography in carbon dioxide solvents |
| US7427463B2 (en) * | 2003-10-14 | 2008-09-23 | Intel Corporation | Photoresists with reduced outgassing for extreme ultraviolet lithography |
| TWI286555B (en) * | 2003-10-23 | 2007-09-11 | Shinetsu Chemical Co | Polymers, resist compositions and patterning process |
| JP4407358B2 (ja) * | 2004-04-14 | 2010-02-03 | 旭硝子株式会社 | 含フッ素ポリマーおよびレジスト組成物 |
| WO2006081534A1 (en) * | 2005-01-28 | 2006-08-03 | Micell Technologies, Inc. | Compositions and methods for image development of conventional chemically amplified photoresists |
| US7410751B2 (en) * | 2005-01-28 | 2008-08-12 | Micell Technologies, Inc. | Compositions and methods for image development of conventional chemically amplified photoresists |
| KR100732301B1 (ko) | 2005-06-02 | 2007-06-25 | 주식회사 하이닉스반도체 | 포토레지스트 중합체, 포토레지스트 조성물 및 이를 이용한반도체 소자의 제조 방법 |
| JP5084216B2 (ja) * | 2005-10-03 | 2012-11-28 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | フォトリソグラフィーのための組成物および方法 |
| TWI431426B (zh) * | 2007-03-27 | 2014-03-21 | Fujifilm Corp | 正型感光性樹脂組成物及使用它之硬化薄膜形成法 |
| JP5412125B2 (ja) * | 2008-05-01 | 2014-02-12 | 東京応化工業株式会社 | 液浸露光用ネガ型レジスト組成物およびレジストパターン形成方法 |
| JP5401126B2 (ja) | 2008-06-11 | 2014-01-29 | 東京応化工業株式会社 | 液浸露光用レジスト組成物およびそれを用いたレジストパターン形成方法 |
| JP5172505B2 (ja) * | 2008-07-07 | 2013-03-27 | 東京応化工業株式会社 | ネガ型レジスト組成物およびそれを用いたレジストパターン形成方法 |
| KR20140096863A (ko) * | 2013-01-29 | 2014-08-06 | 삼성디스플레이 주식회사 | 그래핀 패턴 형성 방법 |
| TWI649620B (zh) | 2015-02-18 | 2019-02-01 | 日商住友電木股份有限公司 | 含有光產鹼劑的光可成像組成物 |
| TWI652281B (zh) | 2015-02-18 | 2019-03-01 | 日商住友電木股份有限公司 | 含有光產鹼劑的光可成像聚烯烴組成物 |
| JP6765501B2 (ja) * | 2016-07-28 | 2020-10-07 | プロメラス， エルエルシー | 無水ナジック酸重合体及びそれに由来する感光性組成物 |
| CN114262416B (zh) * | 2022-03-03 | 2022-05-20 | 甘肃华隆芯材料科技有限公司 | 用于193nm水浸式光刻的聚合物树脂、抗水涂层组合物、抗水涂层及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| DE3638387A1 (de) | 1986-10-03 | 1988-04-14 | Bayer Ag | Copolymere aus (alpha)-cyanacrylaten und ((alpha)-alkyl)-acrylaten, ihre herstellung und verwendung |
| EP0440374B1 (en) | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
| DE4319178C2 (de) | 1992-06-10 | 1997-07-17 | Fujitsu Ltd | Resist-Zusammensetzung enthaltend ein Polymermaterial und einen Säuregenerator |
| US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| KR100265597B1 (ko) | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
| US6165674A (en) | 1998-01-15 | 2000-12-26 | Shipley Company, L.L.C. | Polymers and photoresist compositions for short wavelength imaging |
| JP3847454B2 (ja) | 1998-03-20 | 2006-11-22 | 富士写真フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法 |
| CN1190706C (zh) | 1998-08-26 | 2005-02-23 | 住友化学工业株式会社 | 一种化学增强型正光刻胶组合物 |
| IL141803A0 (en) | 1998-09-23 | 2002-03-10 | Du Pont | Photoresists, polymers and processes for microlithography |
| KR20020012206A (ko) | 1999-05-04 | 2002-02-15 | 메리 이. 보울러 | 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법 |
| US6692888B1 (en) | 1999-10-07 | 2004-02-17 | Shipley Company, L.L.C. | Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same |
| JP2004500596A (ja) | 1999-11-17 | 2004-01-08 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | ニトリル／フルオロアルコールポリマー含有フォトレジストおよび関連するミクロリソグラフィのための方法 |
| US6509134B2 (en) * | 2001-01-26 | 2003-01-21 | International Business Machines Corporation | Norbornene fluoroacrylate copolymers and process for the use thereof |
-
2001
- 2001-05-11 US US09/853,732 patent/US6737215B2/en not_active Expired - Fee Related
-
2002
- 2002-03-19 TW TW091105212A patent/TWI242106B/zh not_active IP Right Cessation
- 2002-04-25 KR KR10-2003-7014580A patent/KR20040029976A/ko not_active Ceased
- 2002-04-25 EP EP02737995A patent/EP1388027A1/en not_active Withdrawn
- 2002-04-25 CN CNB028097025A patent/CN100335972C/zh not_active Expired - Fee Related
- 2002-04-25 JP JP2002589881A patent/JP2004530159A/ja active Pending
- 2002-04-25 WO PCT/EP2002/004558 patent/WO2002093263A1/en not_active Ceased
- 2002-05-09 MY MYPI20021681A patent/MY128511A/en unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014050905A1 (ja) * | 2012-09-28 | 2014-04-03 | 富士フイルム株式会社 | パターン形成用自己組織化組成物、それを用いたブロックコポリマーの自己組織化によるパターン形成方法、及びパターン |
| JP2014070154A (ja) * | 2012-09-28 | 2014-04-21 | Fujifilm Corp | パターン形成用自己組織化組成物、それを用いたブロックコポリマーの自己組織化によるパターン形成方法、及びパターン |
| KR20210105395A (ko) * | 2018-12-19 | 2021-08-26 | 아르끄마 프랑스 | 시아노아크릴레이트 및 하나 이상의 블록 공중합체를 포함하는 조성물 |
| JP2022513249A (ja) * | 2018-12-19 | 2022-02-07 | アルケマ フランス | シアノアクリレートおよび少なくとも１種のブロック共重合体を含む組成物 |
| KR102588037B1 (ko) | 2018-12-19 | 2023-10-11 | 아르끄마 프랑스 | 시아노아크릴레이트 및 하나 이상의 블록 공중합체를 포함하는 조성물 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6737215B2 (en) | 2004-05-18 |
| MY128511A (en) | 2007-02-28 |
| KR20040029976A (ko) | 2004-04-08 |
| US20020187419A1 (en) | 2002-12-12 |
| WO2002093263A1 (en) | 2002-11-21 |
| EP1388027A1 (en) | 2004-02-11 |
| TWI242106B (en) | 2005-10-21 |
| CN100335972C (zh) | 2007-09-05 |
| CN1524201A (zh) | 2004-08-25 |
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