JP2004530159A5 - - Google Patents

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Publication number
JP2004530159A5
JP2004530159A5 JP2002589881A JP2002589881A JP2004530159A5 JP 2004530159 A5 JP2004530159 A5 JP 2004530159A5 JP 2002589881 A JP2002589881 A JP 2002589881A JP 2002589881 A JP2002589881 A JP 2002589881A JP 2004530159 A5 JP2004530159 A5 JP 2004530159A5
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JP
Japan
Prior art keywords
photoresist composition
alkyl
group
structural unit
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002589881A
Other languages
English (en)
Japanese (ja)
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JP2004530159A (ja
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Publication date
Priority claimed from US09/853,732 external-priority patent/US6737215B2/en
Application filed filed Critical
Publication of JP2004530159A publication Critical patent/JP2004530159A/ja
Publication of JP2004530159A5 publication Critical patent/JP2004530159A5/ja
Pending legal-status Critical Current

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JP2002589881A 2001-05-11 2002-04-25 深紫外線リソグラフィー用のフォトレジスト組成物 Pending JP2004530159A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/853,732 US6737215B2 (en) 2001-05-11 2001-05-11 Photoresist composition for deep ultraviolet lithography
PCT/EP2002/004558 WO2002093263A1 (en) 2001-05-11 2002-04-25 Photoresist composition for deep ultraviolet lithography

Publications (2)

Publication Number Publication Date
JP2004530159A JP2004530159A (ja) 2004-09-30
JP2004530159A5 true JP2004530159A5 (enExample) 2008-01-31

Family

ID=25316757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002589881A Pending JP2004530159A (ja) 2001-05-11 2002-04-25 深紫外線リソグラフィー用のフォトレジスト組成物

Country Status (8)

Country Link
US (1) US6737215B2 (enExample)
EP (1) EP1388027A1 (enExample)
JP (1) JP2004530159A (enExample)
KR (1) KR20040029976A (enExample)
CN (1) CN100335972C (enExample)
MY (1) MY128511A (enExample)
TW (1) TWI242106B (enExample)
WO (1) WO2002093263A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7579308B2 (en) 1998-07-06 2009-08-25 Ekc/Dupont Electronics Technologies Compositions and processes for photoresist stripping and residue removal in wafer level packaging
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Jsr株式会社 感放射線性樹脂組成物
US6635401B2 (en) * 2001-06-21 2003-10-21 International Business Machines Corporation Resist compositions with polymers having 2-cyano acrylic monomer
DE10131670A1 (de) * 2001-06-29 2003-01-16 Infineon Technologies Ag Fotoresists mit Reaktionsankern für eine chemische Nachverstärkung von Resiststrukturen für Belichtungen bei 157 nm
US7543592B2 (en) * 2001-12-04 2009-06-09 Ekc Technology, Inc. Compositions and processes for photoresist stripping and residue removal in wafer level packaging
US6800416B2 (en) * 2002-01-09 2004-10-05 Clariant Finance (Bvi) Ltd. Negative deep ultraviolet photoresist
US20050227183A1 (en) * 2002-01-11 2005-10-13 Mark Wagner Compositions and methods for image development of conventional chemically amplified photoresists
DE10203839B4 (de) * 2002-01-31 2007-10-18 Infineon Technologies Ag Resist für die Fotolithografie mit reaktiven Gruppen für eine nachträgliche Modifikation der Resiststrukturen
EP1551886B1 (en) * 2002-08-19 2008-09-10 E.I. Du Pont De Nemours And Company Fluorinated polymers useful as photoresists, and processes for microlithography
AU2003277582A1 (en) * 2002-11-07 2004-06-07 Asahi Glass Company, Limited Fluoropolymer
US6919167B2 (en) * 2002-11-14 2005-07-19 Micell Technologies Positive tone lithography in carbon dioxide solvents
US7427463B2 (en) * 2003-10-14 2008-09-23 Intel Corporation Photoresists with reduced outgassing for extreme ultraviolet lithography
TWI286555B (en) * 2003-10-23 2007-09-11 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP4407358B2 (ja) * 2004-04-14 2010-02-03 旭硝子株式会社 含フッ素ポリマーおよびレジスト組成物
WO2006081534A1 (en) * 2005-01-28 2006-08-03 Micell Technologies, Inc. Compositions and methods for image development of conventional chemically amplified photoresists
US7410751B2 (en) * 2005-01-28 2008-08-12 Micell Technologies, Inc. Compositions and methods for image development of conventional chemically amplified photoresists
KR100732301B1 (ko) 2005-06-02 2007-06-25 주식회사 하이닉스반도체 포토레지스트 중합체, 포토레지스트 조성물 및 이를 이용한반도체 소자의 제조 방법
JP5084216B2 (ja) * 2005-10-03 2012-11-28 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. フォトリソグラフィーのための組成物および方法
TWI431426B (zh) * 2007-03-27 2014-03-21 Fujifilm Corp 正型感光性樹脂組成物及使用它之硬化薄膜形成法
JP5412125B2 (ja) * 2008-05-01 2014-02-12 東京応化工業株式会社 液浸露光用ネガ型レジスト組成物およびレジストパターン形成方法
JP5401126B2 (ja) 2008-06-11 2014-01-29 東京応化工業株式会社 液浸露光用レジスト組成物およびそれを用いたレジストパターン形成方法
JP5172505B2 (ja) * 2008-07-07 2013-03-27 東京応化工業株式会社 ネガ型レジスト組成物およびそれを用いたレジストパターン形成方法
JP5887244B2 (ja) * 2012-09-28 2016-03-16 富士フイルム株式会社 パターン形成用自己組織化組成物、それを用いたブロックコポリマーの自己組織化によるパターン形成方法、及び自己組織化パターン、並びに電子デバイスの製造方法
KR20140096863A (ko) * 2013-01-29 2014-08-06 삼성디스플레이 주식회사 그래핀 패턴 형성 방법
TWI649620B (zh) 2015-02-18 2019-02-01 日商住友電木股份有限公司 含有光產鹼劑的光可成像組成物
TWI652281B (zh) 2015-02-18 2019-03-01 日商住友電木股份有限公司 含有光產鹼劑的光可成像聚烯烴組成物
JP6765501B2 (ja) * 2016-07-28 2020-10-07 プロメラス, エルエルシー 無水ナジック酸重合体及びそれに由来する感光性組成物
FR3090666B1 (fr) * 2018-12-19 2021-11-19 Arkema France Composition comprenant des cyanoacrylates et au moins un copolymère à blocs
CN114262416B (zh) * 2022-03-03 2022-05-20 甘肃华隆芯材料科技有限公司 用于193nm水浸式光刻的聚合物树脂、抗水涂层组合物、抗水涂层及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE3638387A1 (de) 1986-10-03 1988-04-14 Bayer Ag Copolymere aus (alpha)-cyanacrylaten und ((alpha)-alkyl)-acrylaten, ihre herstellung und verwendung
EP0440374B1 (en) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
DE4319178C2 (de) 1992-06-10 1997-07-17 Fujitsu Ltd Resist-Zusammensetzung enthaltend ein Polymermaterial und einen Säuregenerator
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100265597B1 (ko) 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US6165674A (en) 1998-01-15 2000-12-26 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
JP3847454B2 (ja) 1998-03-20 2006-11-22 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法
CN1190706C (zh) 1998-08-26 2005-02-23 住友化学工业株式会社 一种化学增强型正光刻胶组合物
IL141803A0 (en) 1998-09-23 2002-03-10 Du Pont Photoresists, polymers and processes for microlithography
KR20020012206A (ko) 1999-05-04 2002-02-15 메리 이. 보울러 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법
US6692888B1 (en) 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
JP2004500596A (ja) 1999-11-17 2004-01-08 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ニトリル/フルオロアルコールポリマー含有フォトレジストおよび関連するミクロリソグラフィのための方法
US6509134B2 (en) * 2001-01-26 2003-01-21 International Business Machines Corporation Norbornene fluoroacrylate copolymers and process for the use thereof

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