JP2004524250A - 窒化ガリウム材料および方法 - Google Patents
窒化ガリウム材料および方法 Download PDFInfo
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- JP2004524250A JP2004524250A JP2002550144A JP2002550144A JP2004524250A JP 2004524250 A JP2004524250 A JP 2004524250A JP 2002550144 A JP2002550144 A JP 2002550144A JP 2002550144 A JP2002550144 A JP 2002550144A JP 2004524250 A JP2004524250 A JP 2004524250A
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- layer
- gallium nitride
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- nitride material
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- H10H20/80—Constructional details
- H10H20/81—Bodies
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- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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| Application Number | Priority Date | Filing Date | Title |
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| US09/736,972 US6649287B2 (en) | 2000-12-14 | 2000-12-14 | Gallium nitride materials and methods |
| PCT/US2001/048426 WO2002048434A2 (en) | 2000-12-14 | 2001-12-14 | Gallium nitride materials and methods for forming layers thereof |
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| US (17) | US6649287B2 (enExample) |
| EP (1) | EP1343927B1 (enExample) |
| JP (1) | JP2004524250A (enExample) |
| AT (1) | ATE360713T1 (enExample) |
| AU (1) | AU2002230868A1 (enExample) |
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- 2001-12-11 TW TW90130606A patent/TWI257142B/zh not_active IP Right Cessation
- 2001-12-14 WO PCT/US2001/048426 patent/WO2002048434A2/en not_active Ceased
- 2001-12-14 AT AT01991120T patent/ATE360713T1/de not_active IP Right Cessation
- 2001-12-14 EP EP01991120A patent/EP1343927B1/en not_active Expired - Lifetime
- 2001-12-14 DE DE60128134T patent/DE60128134T2/de not_active Expired - Lifetime
- 2001-12-14 AU AU2002230868A patent/AU2002230868A1/en not_active Abandoned
- 2001-12-14 JP JP2002550144A patent/JP2004524250A/ja active Pending
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2002
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2008
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