JP2004179327A5 - - Google Patents

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Publication number
JP2004179327A5
JP2004179327A5 JP2002342797A JP2002342797A JP2004179327A5 JP 2004179327 A5 JP2004179327 A5 JP 2004179327A5 JP 2002342797 A JP2002342797 A JP 2002342797A JP 2002342797 A JP2002342797 A JP 2002342797A JP 2004179327 A5 JP2004179327 A5 JP 2004179327A5
Authority
JP
Japan
Prior art keywords
metal film
alloy material
semiconductor chip
semiconductor
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002342797A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004179327A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002342797A priority Critical patent/JP2004179327A/ja
Priority claimed from JP2002342797A external-priority patent/JP2004179327A/ja
Priority to KR1020057009567A priority patent/KR100742672B1/ko
Priority to AU2003280621A priority patent/AU2003280621A1/en
Priority to PCT/JP2003/013890 priority patent/WO2004049415A1/ja
Priority to US10/536,406 priority patent/US20060226546A1/en
Priority to CNB2003801042815A priority patent/CN100386848C/zh
Priority to TW092133066A priority patent/TW200416748A/zh
Publication of JP2004179327A publication Critical patent/JP2004179327A/ja
Publication of JP2004179327A5 publication Critical patent/JP2004179327A5/ja
Pending legal-status Critical Current

Links

JP2002342797A 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法 Pending JP2004179327A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002342797A JP2004179327A (ja) 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法
KR1020057009567A KR100742672B1 (ko) 2002-11-26 2003-10-29 반도체용 합금재료, 그 합금재료를 사용한 반도체 칩 및제조방법
AU2003280621A AU2003280621A1 (en) 2002-11-26 2003-10-29 Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing same
PCT/JP2003/013890 WO2004049415A1 (ja) 2002-11-26 2003-10-29 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法
US10/536,406 US20060226546A1 (en) 2002-11-26 2003-10-29 Alloy material for semiconductors, semiconductor chip using the alloy material and production method of the same
CNB2003801042815A CN100386848C (zh) 2002-11-26 2003-10-29 半导体用合金材料及半导体芯片的制备方法
TW092133066A TW200416748A (en) 2002-11-26 2003-11-25 Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002342797A JP2004179327A (ja) 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法

Publications (2)

Publication Number Publication Date
JP2004179327A JP2004179327A (ja) 2004-06-24
JP2004179327A5 true JP2004179327A5 (enExample) 2005-09-29

Family

ID=32375901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002342797A Pending JP2004179327A (ja) 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法

Country Status (7)

Country Link
US (1) US20060226546A1 (enExample)
JP (1) JP2004179327A (enExample)
KR (1) KR100742672B1 (enExample)
CN (1) CN100386848C (enExample)
AU (1) AU2003280621A1 (enExample)
TW (1) TW200416748A (enExample)
WO (1) WO2004049415A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8231990B2 (en) * 2006-12-21 2012-07-31 Kobe Steel, Ltd. Alloy film for a metal separator for a fuel cell, a manufacturing method thereof and a target material for sputtering, as well as a metal separator, and a fuel cell
JP4176133B1 (ja) * 2007-06-06 2008-11-05 田中貴金属工業株式会社 プローブピン
JP5116101B2 (ja) * 2007-06-28 2013-01-09 新日鉄住金マテリアルズ株式会社 半導体実装用ボンディングワイヤ及びその製造方法
DE102014111895A1 (de) * 2014-08-20 2016-02-25 Infineon Technologies Ag Metallisierte elektrische Komponente

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770496A (en) * 1971-06-25 1973-11-06 Du Pont Elimination of dielectric degradation in printed bold/dielectric/palladium-silver structures
JPS54144870A (en) * 1978-05-04 1979-11-12 Mitsubishi Electric Corp Wire bonding method for semiconductor element
JPS60254761A (ja) * 1984-05-31 1985-12-16 Sumitomo Electric Ind Ltd 半導体装置用リ−ドフレ−ム
JPS6173326A (ja) * 1984-09-19 1986-04-15 Hitachi Ltd 半導体装置の製造方法
JPH03155134A (ja) * 1989-11-13 1991-07-03 Seiko Epson Corp 集積回路装置の配線電極
US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
JPH05109818A (ja) * 1991-10-16 1993-04-30 Hitachi Chem Co Ltd 半導体チツプの接続構造
DE69322233T2 (de) * 1992-08-27 1999-07-08 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Elektronisches Teil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung
JPH118341A (ja) * 1997-06-18 1999-01-12 Mitsui High Tec Inc 半導体装置用リードフレーム
JPH11233783A (ja) * 1998-02-17 1999-08-27 Sharp Corp 薄膜トランジスタおよびその製造方法
KR100717667B1 (ko) * 2000-09-18 2007-05-11 신닛뽄세이테쯔 카부시키카이샤 반도체용 본딩 와이어 및 그 제조 방법
JP3707548B2 (ja) * 2002-03-12 2005-10-19 株式会社三井ハイテック リードフレーム及びリードフレームの製造方法

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