JP2012501065A5 - - Google Patents
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- Publication number
- JP2012501065A5 JP2012501065A5 JP2011523298A JP2011523298A JP2012501065A5 JP 2012501065 A5 JP2012501065 A5 JP 2012501065A5 JP 2011523298 A JP2011523298 A JP 2011523298A JP 2011523298 A JP2011523298 A JP 2011523298A JP 2012501065 A5 JP2012501065 A5 JP 2012501065A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mirror
- semiconductor chip
- optoelectronic semiconductor
- chip according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000010410 layer Substances 0.000 claims description 25
- 230000005693 optoelectronics Effects 0.000 claims description 19
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims 7
- 238000000151 deposition Methods 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- 238000005019 vapor deposition process Methods 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008039360.6 | 2008-08-22 | ||
| DE102008039360.6A DE102008039360B4 (de) | 2008-08-22 | 2008-08-22 | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| PCT/DE2009/001111 WO2010020213A1 (de) | 2008-08-22 | 2009-08-05 | Optoelektronischer halbleiterchip mit gas-gefülltem spiegel |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012501065A JP2012501065A (ja) | 2012-01-12 |
| JP2012501065A5 true JP2012501065A5 (enExample) | 2015-11-26 |
| JP5921192B2 JP5921192B2 (ja) | 2016-05-24 |
Family
ID=41461099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011523298A Active JP5921192B2 (ja) | 2008-08-22 | 2009-08-05 | 気体の充填された鏡を備えたオプトエレクトロニクス半導体チップおよびその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8761219B2 (enExample) |
| EP (1) | EP2316133A1 (enExample) |
| JP (1) | JP5921192B2 (enExample) |
| KR (1) | KR101704831B1 (enExample) |
| CN (1) | CN102099926B (enExample) |
| DE (1) | DE102008039360B4 (enExample) |
| WO (1) | WO2010020213A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8957490B2 (en) | 2013-06-28 | 2015-02-17 | Infineon Technologies Dresden Gmbh | Silicon light trap devices |
| KR102465406B1 (ko) * | 2016-01-07 | 2022-11-09 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
| DE102018101389A1 (de) * | 2018-01-23 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE269588T1 (de) * | 1993-02-04 | 2004-07-15 | Cornell Res Foundation Inc | Mikrostrukturen und einzelmask, einkristall- herstellungsverfahren |
| US5376580A (en) | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| EP1427016A3 (en) * | 1997-03-10 | 2005-07-20 | Seiko Epson Corporation | Semiconductor device and circuit board mounted with the same |
| KR20050084536A (ko) * | 1997-04-17 | 2005-08-26 | 세키스이가가쿠 고교가부시키가이샤 | 도전성 미립자의 제조장치, 그 제조장치를 이용한 도전성미립자의 제조방법, 그 제조장치를 이용하여 이루어지는전자회로부품 |
| KR100638379B1 (ko) * | 2001-08-24 | 2006-10-26 | 쇼오트 아게 | 집적회로의 컨택 제조 및 하우징 공정 |
| DE10164800B4 (de) * | 2001-11-02 | 2005-03-31 | Infineon Technologies Ag | Verfahren zur Herstellung eines elektronischen Bauelements mit mehreren übereinander gestapelten und miteinander kontaktierten Chips |
| US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
| US6903381B2 (en) * | 2003-04-24 | 2005-06-07 | Opto Tech Corporation | Light-emitting diode with cavity containing a filler |
| JP2004332017A (ja) * | 2003-05-01 | 2004-11-25 | Sumitomo Electric Ind Ltd | ハンダ皮膜の製造方法、ハンダ皮膜を備えたヒートシンク、および半導体素子とヒートシンクの接合体 |
| WO2005089098A2 (en) * | 2004-01-14 | 2005-09-29 | The Regents Of The University Of California | Ultra broadband mirror using subwavelength grating |
| US7573074B2 (en) * | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
| DE102007003282B4 (de) | 2007-01-23 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip |
-
2008
- 2008-08-22 DE DE102008039360.6A patent/DE102008039360B4/de active Active
-
2009
- 2009-08-05 WO PCT/DE2009/001111 patent/WO2010020213A1/de not_active Ceased
- 2009-08-05 EP EP09776069A patent/EP2316133A1/de not_active Withdrawn
- 2009-08-05 CN CN2009801276923A patent/CN102099926B/zh active Active
- 2009-08-05 US US13/002,352 patent/US8761219B2/en active Active
- 2009-08-05 JP JP2011523298A patent/JP5921192B2/ja active Active
- 2009-08-05 KR KR1020117003395A patent/KR101704831B1/ko active Active
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