DE102008039360B4 - Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips - Google Patents
Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips Download PDFInfo
- Publication number
- DE102008039360B4 DE102008039360B4 DE102008039360.6A DE102008039360A DE102008039360B4 DE 102008039360 B4 DE102008039360 B4 DE 102008039360B4 DE 102008039360 A DE102008039360 A DE 102008039360A DE 102008039360 B4 DE102008039360 B4 DE 102008039360B4
- Authority
- DE
- Germany
- Prior art keywords
- mirror layer
- contact points
- semiconductor body
- semiconductor chip
- optoelectronic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 173
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims description 38
- 229910000679 solder Inorganic materials 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 34
- 230000005670 electromagnetic radiation Effects 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910008599 TiW Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- -1 for example Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
Landscapes
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008039360.6A DE102008039360B4 (de) | 2008-08-22 | 2008-08-22 | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| JP2011523298A JP5921192B2 (ja) | 2008-08-22 | 2009-08-05 | 気体の充填された鏡を備えたオプトエレクトロニクス半導体チップおよびその製造方法 |
| KR1020117003395A KR101704831B1 (ko) | 2008-08-22 | 2009-08-05 | 가스 충전된 거울을 포함하는 광전 반도체칩 |
| PCT/DE2009/001111 WO2010020213A1 (de) | 2008-08-22 | 2009-08-05 | Optoelektronischer halbleiterchip mit gas-gefülltem spiegel |
| CN2009801276923A CN102099926B (zh) | 2008-08-22 | 2009-08-05 | 具有气体填充的镜的光电子半导体芯片 |
| EP09776069A EP2316133A1 (de) | 2008-08-22 | 2009-08-05 | Optoelektronischer halbleiterchip mit gas-gefülltem spiegel |
| US13/002,352 US8761219B2 (en) | 2008-08-22 | 2009-08-05 | Optoelectronic semiconductor chip with gas-filled mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008039360.6A DE102008039360B4 (de) | 2008-08-22 | 2008-08-22 | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102008039360A1 DE102008039360A1 (de) | 2010-02-25 |
| DE102008039360B4 true DE102008039360B4 (de) | 2021-05-12 |
Family
ID=41461099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102008039360.6A Active DE102008039360B4 (de) | 2008-08-22 | 2008-08-22 | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8761219B2 (enExample) |
| EP (1) | EP2316133A1 (enExample) |
| JP (1) | JP5921192B2 (enExample) |
| KR (1) | KR101704831B1 (enExample) |
| CN (1) | CN102099926B (enExample) |
| DE (1) | DE102008039360B4 (enExample) |
| WO (1) | WO2010020213A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8957490B2 (en) | 2013-06-28 | 2015-02-17 | Infineon Technologies Dresden Gmbh | Silicon light trap devices |
| KR102465406B1 (ko) * | 2016-01-07 | 2022-11-09 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
| DE102018101389A1 (de) * | 2018-01-23 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040211968A1 (en) * | 2003-04-24 | 2004-10-28 | Ming-Der Lin | Light-emitting diode and method for manufacturing the same |
| US20070145380A1 (en) * | 2006-05-19 | 2007-06-28 | Shum Frank T | Low optical loss electrode structures for LEDs |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2154357C (en) * | 1993-02-04 | 2004-03-02 | Kevin A. Shaw | Microstructures and single-mask, single-crystal process for fabrication thereof |
| US5376580A (en) | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| TW392262B (en) * | 1997-03-10 | 2000-06-01 | Seiko Epson Corp | Electric parts and semiconductor device and the manufacturing method thereof, and the assembled circuit board, and the electric device using the same |
| KR100574215B1 (ko) * | 1997-04-17 | 2006-04-27 | 세키스이가가쿠 고교가부시키가이샤 | 도전성 미립자 |
| CN100578816C (zh) * | 2001-08-24 | 2010-01-06 | 肖特股份公司 | 用于形成触点的方法及封装的集成电路组件 |
| DE10164800B4 (de) * | 2001-11-02 | 2005-03-31 | Infineon Technologies Ag | Verfahren zur Herstellung eines elektronischen Bauelements mit mehreren übereinander gestapelten und miteinander kontaktierten Chips |
| US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
| JP2004332017A (ja) * | 2003-05-01 | 2004-11-25 | Sumitomo Electric Ind Ltd | ハンダ皮膜の製造方法、ハンダ皮膜を備えたヒートシンク、および半導体素子とヒートシンクの接合体 |
| WO2005089098A2 (en) * | 2004-01-14 | 2005-09-29 | The Regents Of The University Of California | Ultra broadband mirror using subwavelength grating |
| DE102007003282B4 (de) | 2007-01-23 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip |
-
2008
- 2008-08-22 DE DE102008039360.6A patent/DE102008039360B4/de active Active
-
2009
- 2009-08-05 KR KR1020117003395A patent/KR101704831B1/ko active Active
- 2009-08-05 CN CN2009801276923A patent/CN102099926B/zh active Active
- 2009-08-05 JP JP2011523298A patent/JP5921192B2/ja active Active
- 2009-08-05 WO PCT/DE2009/001111 patent/WO2010020213A1/de not_active Ceased
- 2009-08-05 EP EP09776069A patent/EP2316133A1/de not_active Withdrawn
- 2009-08-05 US US13/002,352 patent/US8761219B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040211968A1 (en) * | 2003-04-24 | 2004-10-28 | Ming-Der Lin | Light-emitting diode and method for manufacturing the same |
| US20070145380A1 (en) * | 2006-05-19 | 2007-06-28 | Shum Frank T | Low optical loss electrode structures for LEDs |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010020213A1 (de) | 2010-02-25 |
| US8761219B2 (en) | 2014-06-24 |
| EP2316133A1 (de) | 2011-05-04 |
| DE102008039360A1 (de) | 2010-02-25 |
| JP5921192B2 (ja) | 2016-05-24 |
| KR20110068974A (ko) | 2011-06-22 |
| US20110164644A1 (en) | 2011-07-07 |
| CN102099926A (zh) | 2011-06-15 |
| KR101704831B1 (ko) | 2017-02-08 |
| JP2012501065A (ja) | 2012-01-12 |
| CN102099926B (zh) | 2013-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2612372B1 (de) | Leuchtdiodenchip | |
| EP2351079A1 (de) | Strahlungsemittierender halbleiterchip | |
| DE102012102847A1 (de) | Licht emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements | |
| DE102010034665A1 (de) | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips | |
| DE102010048159A1 (de) | Leuchtdiodenchip | |
| DE102010032497A1 (de) | Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips | |
| WO2009079983A1 (de) | Leuchtdiodenchip mit überspannungsschutz | |
| WO2010112298A1 (de) | Optoelektronisches bauelement | |
| EP2286470A1 (de) | Strahlungsemittierendes bauelement und verfahren zur herstellung eines strahlungsemittierenden bauelements | |
| DE102008039360B4 (de) | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips | |
| WO2012107289A1 (de) | Optoelektronischer halbleiterchip mit verkapselter spiegelschicht | |
| WO2014000988A1 (de) | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements | |
| DE102012101889A1 (de) | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip | |
| DE10214210B4 (de) | Lumineszenzdiodenchip zur Flip-Chip-Montage auf einen lotbedeckten Träger und Verfahren zu dessen Herstellung | |
| DE112016000474B4 (de) | Optoelektronisches halbleiterbauteil, optoelektronische anordnung und verfahren zur herstellung eines optoelektronischen halbleiterbauteils | |
| WO2021037568A1 (de) | Verfahren zur herstellung strahlungsemittierender halbleiterchips, strahlungsemittierender halbleiterchip und strahlungsemittierendes bauelement | |
| DE102014111482B4 (de) | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips | |
| DE102018131775A1 (de) | Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements | |
| WO2020182621A1 (de) | Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil | |
| EP2619807B1 (de) | Optoelektronischer halbleiterchip und verfahren zu dessen herstellung | |
| DE102014107555A1 (de) | Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement | |
| DE102017126109A1 (de) | Licht emittierendes Bauelement und Verfahren zur Herstellung eines Licht emittierenden Bauelements | |
| WO2012080014A1 (de) | Gehäuse und verfahren zur herstellung eines gehäuses für ein optoelektronisches bauelement | |
| DE102015108056A1 (de) | Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils | |
| DE112016000474B9 (de) | Optoelektronisches halbleiterbauteil, optoelektronische anordnung und verfahren zur herstellung eines optoelektronischen halbleiterbauteils |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OR8 | Request for search as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8105 | Search report available | ||
| R012 | Request for examination validly filed | ||
| R016 | Response to examination communication | ||
| R016 | Response to examination communication | ||
| R018 | Grant decision by examination section/examining division | ||
| R020 | Patent grant now final | ||
| R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: H01L0031023200 Ipc: H10F0077400000 |