JP5921192B2 - 気体の充填された鏡を備えたオプトエレクトロニクス半導体チップおよびその製造方法 - Google Patents

気体の充填された鏡を備えたオプトエレクトロニクス半導体チップおよびその製造方法 Download PDF

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Publication number
JP5921192B2
JP5921192B2 JP2011523298A JP2011523298A JP5921192B2 JP 5921192 B2 JP5921192 B2 JP 5921192B2 JP 2011523298 A JP2011523298 A JP 2011523298A JP 2011523298 A JP2011523298 A JP 2011523298A JP 5921192 B2 JP5921192 B2 JP 5921192B2
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Prior art keywords
mirror
layer
semiconductor chip
optoelectronic semiconductor
semiconductor body
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JP2011523298A
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Japanese (ja)
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JP2012501065A5 (enExample
JP2012501065A (ja
Inventor
グロリエ ヴァンサン
グロリエ ヴァンサン
アンドレアス　プレスル
プレスル アンドレアス
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
JP2011523298A 2008-08-22 2009-08-05 気体の充填された鏡を備えたオプトエレクトロニクス半導体チップおよびその製造方法 Active JP5921192B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008039360.6 2008-08-22
DE102008039360.6A DE102008039360B4 (de) 2008-08-22 2008-08-22 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
PCT/DE2009/001111 WO2010020213A1 (de) 2008-08-22 2009-08-05 Optoelektronischer halbleiterchip mit gas-gefülltem spiegel

Publications (3)

Publication Number Publication Date
JP2012501065A JP2012501065A (ja) 2012-01-12
JP2012501065A5 JP2012501065A5 (enExample) 2015-11-26
JP5921192B2 true JP5921192B2 (ja) 2016-05-24

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JP2011523298A Active JP5921192B2 (ja) 2008-08-22 2009-08-05 気体の充填された鏡を備えたオプトエレクトロニクス半導体チップおよびその製造方法

Country Status (7)

Country Link
US (1) US8761219B2 (enExample)
EP (1) EP2316133A1 (enExample)
JP (1) JP5921192B2 (enExample)
KR (1) KR101704831B1 (enExample)
CN (1) CN102099926B (enExample)
DE (1) DE102008039360B4 (enExample)
WO (1) WO2010020213A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8957490B2 (en) 2013-06-28 2015-02-17 Infineon Technologies Dresden Gmbh Silicon light trap devices
KR102465406B1 (ko) * 2016-01-07 2022-11-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
DE102018101389A1 (de) * 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE269588T1 (de) * 1993-02-04 2004-07-15 Cornell Res Foundation Inc Mikrostrukturen und einzelmask, einkristall- herstellungsverfahren
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
EP1427016A3 (en) * 1997-03-10 2005-07-20 Seiko Epson Corporation Semiconductor device and circuit board mounted with the same
KR20050084536A (ko) * 1997-04-17 2005-08-26 세키스이가가쿠 고교가부시키가이샤 도전성 미립자의 제조장치, 그 제조장치를 이용한 도전성미립자의 제조방법, 그 제조장치를 이용하여 이루어지는전자회로부품
KR100638379B1 (ko) * 2001-08-24 2006-10-26 쇼오트 아게 집적회로의 컨택 제조 및 하우징 공정
DE10164800B4 (de) * 2001-11-02 2005-03-31 Infineon Technologies Ag Verfahren zur Herstellung eines elektronischen Bauelements mit mehreren übereinander gestapelten und miteinander kontaktierten Chips
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US6903381B2 (en) * 2003-04-24 2005-06-07 Opto Tech Corporation Light-emitting diode with cavity containing a filler
JP2004332017A (ja) * 2003-05-01 2004-11-25 Sumitomo Electric Ind Ltd ハンダ皮膜の製造方法、ハンダ皮膜を備えたヒートシンク、および半導体素子とヒートシンクの接合体
WO2005089098A2 (en) * 2004-01-14 2005-09-29 The Regents Of The University Of California Ultra broadband mirror using subwavelength grating
US7573074B2 (en) * 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
DE102007003282B4 (de) 2007-01-23 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip

Also Published As

Publication number Publication date
KR101704831B1 (ko) 2017-02-08
DE102008039360B4 (de) 2021-05-12
EP2316133A1 (de) 2011-05-04
KR20110068974A (ko) 2011-06-22
CN102099926A (zh) 2011-06-15
US20110164644A1 (en) 2011-07-07
CN102099926B (zh) 2013-04-24
US8761219B2 (en) 2014-06-24
JP2012501065A (ja) 2012-01-12
WO2010020213A1 (de) 2010-02-25
DE102008039360A1 (de) 2010-02-25

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