JP6265306B1 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP6265306B1 JP6265306B1 JP2017529106A JP2017529106A JP6265306B1 JP 6265306 B1 JP6265306 B1 JP 6265306B1 JP 2017529106 A JP2017529106 A JP 2017529106A JP 2017529106 A JP2017529106 A JP 2017529106A JP 6265306 B1 JP6265306 B1 JP 6265306B1
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- 239000000758 substrate Substances 0.000 claims abstract description 211
- 239000004065 semiconductor Substances 0.000 claims abstract description 97
- 238000000605 extraction Methods 0.000 claims description 38
- 239000000919 ceramic Substances 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 description 23
- 238000000034 method Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 238000005304 joining Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001361 White metal Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
本発明の第1の実施形態に係る発光装置は、図1に示すように、支持基板10と、第1の半導体層21の上方に第2の半導体層23を配置した積層構造を有し、支持基板10の上に配置された発光素子20と、発光素子20の上方に配置された光透過性基板70と、第1の半導体層21と電気的に接続する第1の接続用電極41と、第2の半導体層23と電気的に接続する第2の接続用電極42とを備える。
発光装置の特性には、発光素子20に加わる応力が大きく影響する。特に、CSPを適用した発光装置は、発光素子20がパッケージ材料と密着する構造であるため、パッケージ材料との線膨張係数との違いや加工時の変形によって、発光素子20に応力が加わりやすい。
図15に、本発明の第2の実施形態に係る発光装置を示す。図15に示した発光装置では、第1の半導体層21の下面に接続する第1の引き出し電極51が、支持基板10を貫通している。つまり、第1の引き出し電極51の下面が支持基板10の下方で露出している点が、図1に示した発光装置と異なる。なお、第1の引き出し電極51が、発光素子20の積層方向と垂直な方向に延伸して第1の接続用電極41に接続する構造は、図1と同様である。
図17に、本発明の第3の実施形態に係る発光装置を示す。図17に示す発光装置は、支持基板10に光透過性を有する基板を使用する点が、図1に示した発光装置と異なる。支持基板10には、光透過性基板70と同等の特性の基板を使用可能であり、例えば、ガラス基板が好適に使用される。
上記のように、本発明は実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
Claims (11)
- 支持基板と、
第1の半導体層の上方に第2の半導体層を配置した積層構造を有し、前記支持基板の上に配置された発光素子と、
前記発光素子の上方に配置された光透過性基板と、
前記支持基板の第1の側面上から前記光透過性基板の第1の側面上に亘り連続的に配置され、前記第1の半導体層と電気的に接続する第1の接続用電極と、
前記支持基板の第2の側面上から前記光透過性基板の第2の側面上に亘り連続的に配置され、前記第2の半導体層と電気的に接続する第2の接続用電極と
を備え、
前記第1の接続用電極及び前記第2の接続用電極の、前記支持基板及び前記光透過性基板に向いた第1の側面と対向する第2の側面を介して、実装基板と電気的に接続されることを特徴とする発光装置。 - 前記第1の接続用電極の前記第2の側面に配置された第1の接合部材と、
前記第2の接続用電極の前記第2の側面に配置された第2の接合部材と
を用いて、前記第1の接続用電極及び前記第2の接続用電極が、前記実装基板に配置された配線パターンとそれぞれ接続されることを特徴とする請求項1に記載の発光装置。 - 前記光透過性基板が、前記第1の接合部材及び前記第2の接合部材を用いて前記第1の接続用電極及び前記第2の接続用電極と前記配線パターンとの接続を形成する温度に対して、耐熱性を有することを特徴とする請求項2に記載の発光装置。
- 前記光透過性基板がガラス基板であることを特徴とする請求項3に記載の発光装置。
- 前記支持基板がセラミック基板であることを特徴とする請求項1に記載の発光装置。
- 前記セラミック基板が、
第1のセラミック層と、
前記第1のセラミック層よりも線膨張係数の大きい第2のセラミック層と
を積層した構造を有し、前記第1のセラミック層の上に前記発光素子が配置されていることを特徴とする請求項5に記載の発光装置。 - 平面視で、前記発光素子の下面の全体が前記支持基板に覆われていることを特徴とする請求項1に記載の発光装置。
- 前記第1の半導体層の下面に接続し、前記発光素子の積層方向と垂直な方向に延伸して前記第1の接続用電極に接続する第1の引き出し電極を更に備え、
前記第1の引き出し電極の下面が前記支持基板の下方で露出していることを特徴とする請求項1に記載の発光装置。 - 前記第2の半導体層の側面から前記発光素子の積層方向と垂直な方向に延伸し、前記第2の半導体層と前記第2の接続用電極とを電気的に接続する第2の引き出し電極を更に備えることを特徴とする請求項1に記載の発光装置。
- 前記支持基板が光透過性を有することを特徴とする請求項1に記載の発光装置。
- 前記第1の接続用電極及び前記第2の接続用電極と前記光透過性基板との界面が、前記発光素子からの出射光を反射するように構成されていることを特徴とする請求項1に記載の発光装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/065973 WO2017208326A1 (ja) | 2016-05-31 | 2016-05-31 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6265306B1 true JP6265306B1 (ja) | 2018-01-24 |
JPWO2017208326A1 JPWO2017208326A1 (ja) | 2018-06-14 |
Family
ID=60418846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017529106A Active JP6265306B1 (ja) | 2016-05-31 | 2016-05-31 | 発光装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20170345981A1 (ja) |
JP (1) | JP6265306B1 (ja) |
CN (1) | CN108604625A (ja) |
WO (1) | WO2017208326A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008093880A1 (ja) * | 2007-02-02 | 2008-08-07 | Sanyo Electric Co., Ltd. | 半導体装置及びその製造方法 |
JP2008181932A (ja) * | 2007-01-23 | 2008-08-07 | Sanyo Electric Co Ltd | 発光装置及びその製造方法 |
JP2011223000A (ja) * | 2010-04-12 | 2011-11-04 | Lg Innotek Co Ltd | 発光素子、発光素子パッケージ |
JP2015153793A (ja) * | 2014-02-11 | 2015-08-24 | 豊田合成株式会社 | 半導体発光素子とその製造方法および発光装置 |
US20150364639A1 (en) * | 2014-06-16 | 2015-12-17 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor light emitting device package |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1994012096A1 (en) * | 1992-12-01 | 1994-06-09 | Somanetics Corporation | Patient sensor for optical cerebral oximeters |
TWI252594B (en) * | 2003-06-24 | 2006-04-01 | Opto Tech Corp | Improved LED structure |
CN103367591B (zh) * | 2012-04-09 | 2016-02-10 | 展晶科技(深圳)有限公司 | 发光二极管芯片 |
CN103840054A (zh) * | 2012-11-20 | 2014-06-04 | 展晶科技(深圳)有限公司 | 发光二极管芯片 |
CN103296173A (zh) * | 2013-05-24 | 2013-09-11 | 大连德豪光电科技有限公司 | 具有侧面电极的led芯片及其封装结构 |
CN203456511U (zh) * | 2013-08-21 | 2014-02-26 | 深圳市凯信光电有限公司 | 一种基于led晶片结构的灯板 |
-
2016
- 2016-05-31 WO PCT/JP2016/065973 patent/WO2017208326A1/ja active Application Filing
- 2016-05-31 CN CN201680007327.9A patent/CN108604625A/zh active Pending
- 2016-05-31 JP JP2017529106A patent/JP6265306B1/ja active Active
-
2017
- 2017-07-26 US US15/659,700 patent/US20170345981A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008181932A (ja) * | 2007-01-23 | 2008-08-07 | Sanyo Electric Co Ltd | 発光装置及びその製造方法 |
WO2008093880A1 (ja) * | 2007-02-02 | 2008-08-07 | Sanyo Electric Co., Ltd. | 半導体装置及びその製造方法 |
JP2011223000A (ja) * | 2010-04-12 | 2011-11-04 | Lg Innotek Co Ltd | 発光素子、発光素子パッケージ |
JP2015153793A (ja) * | 2014-02-11 | 2015-08-24 | 豊田合成株式会社 | 半導体発光素子とその製造方法および発光装置 |
US20150364639A1 (en) * | 2014-06-16 | 2015-12-17 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor light emitting device package |
Also Published As
Publication number | Publication date |
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CN108604625A (zh) | 2018-09-28 |
US20170345981A1 (en) | 2017-11-30 |
JPWO2017208326A1 (ja) | 2018-06-14 |
WO2017208326A1 (ja) | 2017-12-07 |
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