1252594 五、發明說明（1) 【技術領域】 ^ 本發明係有關於一種發光二極體，尤指一種可適用於 平面型發光二極體之構造改良，其可在不使用覆晶發光二 極體之封裝製作方式下，即可得到與覆晶發光二極體相同 之發光導出效果。 【先前技術】 發光一極體（LED ; Light-Emitting Diode)由於具備 有亮度高、電能損耗低、重量輕、使用壽命長及無高污染 材料之優點’因此係為現代生活中之重要發光元件。 而在發光二極體發展歷程中，如何有效提高發光亮度 及增加散熱效率，一直以來皆為業界所研發之重點所在。 其中，為改善習用LED構造因為接線墊（b〇nding pad)所造 成之阻光遺憾，於是業界發展出一種覆晶發光二極體構造 (nip chip LED) ’如第i圖所示。其主要係將一發光晶粒 n予以倒置，而將其第—電極m及第：電極⑺分別藉由 弟:錫球171及第二锡球175與基板1 i上之卜供電線路13 i 供電Λ路15電性連接。當發光晶粒丨7之蟲晶層丨74 二於=本、/又射光線將朝具有透光效果之曰曰0粒基板172方 冋技射出去，如虛線箭頭所示。 雖然，覆晶封裝丨p n m、生-r > , ^ ^ ^ -ν' ^ ^ UD構仏可有效解決習用LED投射光源 中不僅需要昂主之ί t 覆晶封tLED在製作過程 貝 植球機機器，且亦需要揞石盧之對進枯对干 ，徒增製程上之；^ u“要^確之對丰技術 1252594 五、發明說明（2) 存在有其可提升的空間。 【發明内容】 因此，如何設計出一種新穎之發光二極體結構，不僅 可利用較低之成本支出即可得到與習用覆晶封裝LED相同 之出光效果，亦可提供良好的導熱效率，以提升其使用壽 命，此即本發明之發明重點。1252594 V. INSTRUCTION DESCRIPTION (1) [Technical Field] The present invention relates to a light-emitting diode, and more particularly to a structural improvement applicable to a planar light-emitting diode, which can be used without a flip-chip light-emitting diode Under the package manufacturing method, the same light-emitting effect as that of the flip-chip light-emitting diode can be obtained. [Prior Art] Light-Emitting Diode (LED) is an important light-emitting element in modern life due to its high brightness, low power loss, light weight, long service life and high pollution-free materials. . In the development of light-emitting diodes, how to effectively improve the brightness of light and increase the efficiency of heat dissipation has always been the focus of research and development in the industry. Among them, in order to improve the conventional LED structure, since the light blocking caused by the wiring pads is unfortunate, the industry has developed a nip chip LED as shown in FIG. The main purpose is to invert a light-emitting die n, and the first electrode m and the first electrode (7) are respectively powered by the tin ball 171 and the second solder ball 175 and the power supply line 13 i on the substrate 1 i. The road 15 is electrically connected. When the worm layer 7 of the illuminating crystal grain 二7 is φ, the ray will be emitted toward the NP substrate 172 having a light transmitting effect, as indicated by the dotted arrow. Although, the flip chip package 丨pnm, sheng-r > , ^ ^ ^ -ν' ^ ^ UD structure can effectively solve the conventional LED projection light source, not only need to be the main ί t, the flip-chip seal tLED in the production process Machines, and also need to smash the stone to the dry, add to the process; ^ u "make sure the right technology 1252594 five, invention description (2) there is room for improvement. Therefore, how to design a novel light-emitting diode structure can not only obtain the same light-emitting effect as the conventional flip-chip package LED, but also provide good thermal conductivity to enhance its use. Lifetime, this is the focus of the invention of the present invention.
本發明之主要目的，在於提供一種發光二極體構造改 良，可有效改善上述習用發光二極體所面臨之技術困難點 本發明之次要目的，在於提供一種發光二極體構造改 良，利用簡單導電片即可在不需要植球機等昂貴機器之情 況下，以獲得與覆晶封裝發光二極體相同之發光導出效果 ，不僅可以簡化製作流程，亦可相對降低製作成本。 本發明之又一目的，在於提供一種發光二極體構造改 良，利用簡單導電片以作為散熱管道，不僅可以有效提升 其導熱效率，亦可因此而大幅增加其發光亮度及使用壽命 〇 為達成上述目的，本發明主要構造係包括：一基板； 一固設於基板上具有PN界面之發光二極體磊晶層，該磊晶 層之同一表面部分位置個別設有第一電極及第二電辑；及 至少一/導電片固設於第一電極、第二電極及其組合式之其 中之一者。The main object of the present invention is to provide an improved structure of a light-emitting diode, which can effectively improve the technical difficulties faced by the conventional light-emitting diode. The second object of the present invention is to provide an improved structure of the light-emitting diode, which is simple to use. The conductive sheet can obtain the same light-emitting effect as the flip-chip packaged light-emitting diode without requiring an expensive machine such as a ball-splitting machine, which not only simplifies the production process, but also relatively reduces the manufacturing cost. Another object of the present invention is to provide an improved structure of a light-emitting diode, which can be used as a heat-dissipating pipe by using a simple conductive sheet, which can not only effectively improve the heat-conducting efficiency, but also greatly increase the brightness and service life of the light-emitting diode. The main structure of the present invention comprises: a substrate; a light-emitting diode epitaxial layer having a PN interface fixed on the substrate, wherein the same surface portion of the epitaxial layer is separately provided with the first electrode and the second electrode And at least one/conductive sheet is fixed to one of the first electrode, the second electrode, and a combination thereof.
第5頁 1252594 五、發明說明（3) 一~〜 -一 【實施方式】 首先，請參閱第2圖，係為本發明發光二極體一 實施例之構造截面圖；如圖所示，本發明發光二極體 光晶粒28如同於一般之平面型發光二極體，主要構造 括有一晶粒基板28 2，且在晶粒基板2 8 2上形成有一具 界面之磊晶層2 84，磊晶層2 84之同一表面上再個別設 第-電極287及第二電極289。而在第一電極287上再 有一具導電功效之導電片21 ，且在導電片21及第二電 9 士 ：別措由—第一引線21 5及第二引線2 55而與一相 之仏电線路（未顯示）電性連接。當磊晶 射光源日夺，其投射光源將可經由具有透光 之日日叔282方向投射出去，如虛線箭頭所示。 州發曰月Μ二極體之投射光源係可經由晶粒 :晶口 ；：出去，因此，其發光導出效果即如同於 :發夯t : “ —極體構造’但其卻不必使用如習用覆 “ΐ:3所需要之植球機及精確對準技術，所以 Π生程及降低技術困難度，“亦可相對大 所^，該Λ電片21係可選擇—具有良好導熱效果之 蠢晶層284樣界面工作而產生高妖 ί僅ϋ源可藉由導電片21而傳導於發光元件外，’因 =^持發光晶粒28各構成元件之卫作穩定性及餐Page 5 1252594 V. Description of the Invention (3) 1~~ -1 [Embodiment] First, please refer to FIG. 2, which is a structural sectional view of an embodiment of the light-emitting diode of the present invention; The light-emitting diode optical crystal 28 is similar to a general planar light-emitting diode. The main structure includes a die substrate 28 2 , and an interface epitaxial layer 2 84 is formed on the die substrate 282. The first electrode 287 and the second electrode 289 are separately provided on the same surface of the epitaxial layer 2 84. On the first electrode 287, there is a conductive sheet 21 having a conductive effect, and the conductive sheet 21 and the second electrode 9 are separated from each other by the first lead 21 5 and the second lead 2 55. Electrical lines (not shown) are electrically connected. When the epitaxial source is captured, its projection source will be projected through the daylight 282 with light transmission, as indicated by the dashed arrow. The projected light source of the state 曰 Μ Μ diode can pass through the grain: crystal port;: go out, therefore, its luminescence export effect is as follows: hair t: "-polar body structure" but it does not have to be used as usual Covering "ΐ: 3 required ball-cuttering machines and precise alignment technology, so the process of production and the difficulty of reducing technical difficulties," can also be relatively large, the Λ Λ 21 21 系 可选择 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有The 284-like interface of the crystal layer works to produce a high-definition. Only the source of the germanium can be conducted outside the light-emitting element by the conductive sheet 21, and the stability and the meal of the constituent elements of the light-emitting die 28 are maintained.
生里，且亦可有效提升元件之使用壽命。 X 較隹 之發 係包 有PN 有， 固設 極2 8 對應 I 面工 效果 基板 習用 晶封 可相 幅降 材質 時， 此， 光產 再者，凊苓閱第3圖，係為本發明又一實施例之 構造In life, it can also effectively improve the service life of components. X has a PN with a hairpin package, and a fixed pole 2 8 corresponds to an I-face effect substrate. When the crystal seal can be used to reduce the thickness of the material, this is a lighter product, see Figure 3 for the present invention. Construction of a further embodiment
第6頁 1252594 五、發明說明（5) 果◦當然，散熱層4 3與保護層4 7亦可為同一材質所製成， 且，散熱層4 3内亦可存在有色彩轉換層。 又，導電片（21 、35)亦可作為第一電極（287)或第 二電極（2 8 9 )之延伸電極，如在此實施例中所示之第二電 極4 8 9，其延伸電極45可與第二電極48 9成為一體，且可超 過發光晶粒2 8側邊之垂直延伸位置，在延伸電極4 5上再固 設第二引線3 5 5。 最後，請參閱第5圖，係為本發明又一實施例之構造 截面圖；如圖所示，其主要係將與第一電極2 8 7、第二電 極2 8 9電性連接之導電片41、55彎折成n Ln型或其它幾何形 狀悲樣之導電片’如此’該發光二極體即可成為一 SMD型 發光二極體，藉此以擴大本發明之實際使用類型◦當然， 為了預防導電片41、55之不正常電性連接，因此，在導電 片4 1、5 5與發光晶粒2 8之間亦可設有一絕緣層4 9、4 9 5。 綜上所述，當知本發明係有關於一種發光二極體，尤 指一種可適用於平面型發光二極體之構造改良，其可在不 使用覆晶發光二極體之封裝製作方式下，即可得到與覆晶 發光二極體相同之發光導出效果。故本發明實為一具有新 穎性、進步性及可供產業上利用者，應符合我國專利法專 利申請要件無疑，爰依法提出發明專利申請，祈 鈞局早 曰賜准專利’至感為核。 惟以上所述者，僅為本發明之一較佳實施例而已，並 非用來限定本發明實施之範圍，即凡依本發明申請專利範 圍所述之形狀、構造、特徵及精神所為之均等變化與修飾Page 6 1252594 V. Description of the Invention (5) Of course, the heat dissipation layer 43 and the protective layer 47 may be made of the same material, and a color conversion layer may be present in the heat dissipation layer 43. Moreover, the conductive sheet (21, 35) may also serve as an extension electrode of the first electrode (287) or the second electrode (289), such as the second electrode 489 shown in this embodiment, the extended electrode thereof 45 can be integrated with the second electrode 48 9 and can extend beyond the vertical extending position of the side of the light-emitting die 28 to fix the second lead 35 5 on the extending electrode 45. Finally, please refer to FIG. 5, which is a structural cross-sectional view of another embodiment of the present invention; as shown, it is mainly a conductive sheet electrically connected to the first electrode 287 and the second electrode 298. 41, 55 bent into n Ln type or other geometrically sinuous conductive sheet 'so' the light emitting diode can be an SMD type light emitting diode, thereby expanding the actual use type of the present invention, of course, In order to prevent the abnormal electrical connection of the conductive sheets 41 and 55, an insulating layer 4 9 and 49 5 may be disposed between the conductive sheets 4 1 and 55 and the light-emitting crystal grains 28 . In summary, it is to be understood that the present invention relates to a light-emitting diode, and more particularly to a structural improvement applicable to a planar light-emitting diode, which can be fabricated without using a flip-chip light-emitting diode. The same light-emitting effect as that of the flip-chip light-emitting diode can be obtained. Therefore, the present invention is a novelty, progressive and available for industrial use. It should be in accordance with the patent application requirements of China's patent law. Undoubtedly, the invention patent application is filed according to law, and the Prayer Council grants the patent as early as possible. . However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the shape, structure, features, and spirit of the present invention are equally varied. And grooming
第8頁 1252594 五、發明說明（:6) ，均應包括於本發明之申請專利範爵内◦Page 8 1252594 V. Description of invention (:6), both should be included in the patent application of the invention
圖號對照說明 11 基板 13 第一供電線路 15 第二供電線路 17 發光晶粒 171 第一錫球 172 晶粒基板 174 L E D蠢晶片 .175 第二錫球 177 第一電極 179 第二電極 21 導電片 215 第一引線 255 第二引線 28 發光晶粒 282 晶粒基板 284 蠢晶層 287 第一電極 288 反光層 289 第二電極 35 導電片 355 第二引線 41 導電片 43 散熱層 45 延伸電極 461 供電線路 462 供電線路 47 保護層 475 色彩轉換層 489 第二電極 49 .絕緣層 495 絕緣層 55 導電片Figure number comparison description 11 substrate 13 first power supply line 15 second power supply line 17 light-emitting die 171 first solder ball 172 die substrate 174 LED stray wafer. 175 second solder ball 177 first electrode 179 second electrode 21 conductive sheet 215 first lead 255 second lead 28 light emitting die 282 die substrate 284 stray layer 287 first electrode 288 reflective layer 289 second electrode 35 conductive sheet 355 second lead 41 conductive sheet 43 heat sink layer 45 extension electrode 461 power supply line 462 power supply line 47 protective layer 475 color conversion layer 489 second electrode 49. insulating layer 495 insulating layer 55 conductive sheet
第9頁 1252594Page 9 1252594
第ίο頁Page ίο