CN102099926B - 具有气体填充的镜的光电子半导体芯片 - Google Patents

具有气体填充的镜的光电子半导体芯片 Download PDF

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Publication number
CN102099926B
CN102099926B CN2009801276923A CN200980127692A CN102099926B CN 102099926 B CN102099926 B CN 102099926B CN 2009801276923 A CN2009801276923 A CN 2009801276923A CN 200980127692 A CN200980127692 A CN 200980127692A CN 102099926 B CN102099926 B CN 102099926B
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China
Prior art keywords
mirror layer
semiconductor body
semiconductor chip
contact site
cavity
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CN2009801276923A
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English (en)
Chinese (zh)
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CN102099926A (zh
Inventor
文森特·格罗利尔
安德烈亚斯·普洛斯尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN102099926A publication Critical patent/CN102099926A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
CN2009801276923A 2008-08-22 2009-08-05 具有气体填充的镜的光电子半导体芯片 Active CN102099926B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008039360.6A DE102008039360B4 (de) 2008-08-22 2008-08-22 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102008039360.6 2008-08-22
PCT/DE2009/001111 WO2010020213A1 (de) 2008-08-22 2009-08-05 Optoelektronischer halbleiterchip mit gas-gefülltem spiegel

Publications (2)

Publication Number Publication Date
CN102099926A CN102099926A (zh) 2011-06-15
CN102099926B true CN102099926B (zh) 2013-04-24

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CN2009801276923A Active CN102099926B (zh) 2008-08-22 2009-08-05 具有气体填充的镜的光电子半导体芯片

Country Status (7)

Country Link
US (1) US8761219B2 (enExample)
EP (1) EP2316133A1 (enExample)
JP (1) JP5921192B2 (enExample)
KR (1) KR101704831B1 (enExample)
CN (1) CN102099926B (enExample)
DE (1) DE102008039360B4 (enExample)
WO (1) WO2010020213A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8957490B2 (en) 2013-06-28 2015-02-17 Infineon Technologies Dresden Gmbh Silicon light trap devices
KR102465406B1 (ko) * 2016-01-07 2022-11-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
DE102018101389A1 (de) * 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502316A (en) * 1993-03-19 1996-03-26 Hewlett-Packard Company Wafer bonding of light emitting diode layers
DE102007003282A1 (de) * 2007-01-23 2008-07-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0683921B1 (en) * 1993-02-04 2004-06-16 Cornell Research Foundation, Inc. Microstructures and single mask, single-crystal process for fabrication thereof
US6515370B2 (en) * 1997-03-10 2003-02-04 Seiko Epson Corporation Electronic component and semiconductor device, method for manufacturing the same, circuit board have the same mounted thereon, and electronic equipment having the circuit board
WO1998046811A1 (fr) * 1997-04-17 1998-10-22 Sekisui Chemical Co., Ltd. Particules conductrices, procede et dispositif de fabrication, structure anisotrope a adhesif et raccordement conducteur, composants de circuit electronique et leur procede de fabrication
EP1419534A2 (de) * 2001-08-24 2004-05-19 Schott Glas Verfahren zum kontaktieren und gehäusen von integrierten schaltungen
DE10164800B4 (de) * 2001-11-02 2005-03-31 Infineon Technologies Ag Verfahren zur Herstellung eines elektronischen Bauelements mit mehreren übereinander gestapelten und miteinander kontaktierten Chips
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US6903381B2 (en) * 2003-04-24 2005-06-07 Opto Tech Corporation Light-emitting diode with cavity containing a filler
JP2004332017A (ja) * 2003-05-01 2004-11-25 Sumitomo Electric Ind Ltd ハンダ皮膜の製造方法、ハンダ皮膜を備えたヒートシンク、および半導体素子とヒートシンクの接合体
WO2005089098A2 (en) * 2004-01-14 2005-09-29 The Regents Of The University Of California Ultra broadband mirror using subwavelength grating
US7573074B2 (en) * 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502316A (en) * 1993-03-19 1996-03-26 Hewlett-Packard Company Wafer bonding of light emitting diode layers
DE102007003282A1 (de) * 2007-01-23 2008-07-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip

Also Published As

Publication number Publication date
JP5921192B2 (ja) 2016-05-24
JP2012501065A (ja) 2012-01-12
WO2010020213A1 (de) 2010-02-25
KR101704831B1 (ko) 2017-02-08
DE102008039360B4 (de) 2021-05-12
US8761219B2 (en) 2014-06-24
EP2316133A1 (de) 2011-05-04
KR20110068974A (ko) 2011-06-22
DE102008039360A1 (de) 2010-02-25
CN102099926A (zh) 2011-06-15
US20110164644A1 (en) 2011-07-07

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