KR101704831B1 - 가스 충전된 거울을 포함하는 광전 반도체칩 - Google Patents

가스 충전된 거울을 포함하는 광전 반도체칩 Download PDF

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KR101704831B1
KR101704831B1 KR1020117003395A KR20117003395A KR101704831B1 KR 101704831 B1 KR101704831 B1 KR 101704831B1 KR 1020117003395 A KR1020117003395 A KR 1020117003395A KR 20117003395 A KR20117003395 A KR 20117003395A KR 101704831 B1 KR101704831 B1 KR 101704831B1
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South Korea
Prior art keywords
mirror layer
semiconductor body
contact portion
hollow
contact
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KR1020117003395A
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English (en)
Korean (ko)
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KR20110068974A (ko
Inventor
빈센트 그롤리어
안드레아스 플로슬
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
KR1020117003395A 2008-08-22 2009-08-05 가스 충전된 거울을 포함하는 광전 반도체칩 Active KR101704831B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008039360.6A DE102008039360B4 (de) 2008-08-22 2008-08-22 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102008039360.6 2008-08-22
PCT/DE2009/001111 WO2010020213A1 (de) 2008-08-22 2009-08-05 Optoelektronischer halbleiterchip mit gas-gefülltem spiegel

Publications (2)

Publication Number Publication Date
KR20110068974A KR20110068974A (ko) 2011-06-22
KR101704831B1 true KR101704831B1 (ko) 2017-02-08

Family

ID=41461099

Family Applications (1)

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KR1020117003395A Active KR101704831B1 (ko) 2008-08-22 2009-08-05 가스 충전된 거울을 포함하는 광전 반도체칩

Country Status (7)

Country Link
US (1) US8761219B2 (enExample)
EP (1) EP2316133A1 (enExample)
JP (1) JP5921192B2 (enExample)
KR (1) KR101704831B1 (enExample)
CN (1) CN102099926B (enExample)
DE (1) DE102008039360B4 (enExample)
WO (1) WO2010020213A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8957490B2 (en) 2013-06-28 2015-02-17 Infineon Technologies Dresden Gmbh Silicon light trap devices
KR102465406B1 (ko) * 2016-01-07 2022-11-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
DE102018101389A1 (de) * 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030111667A1 (en) * 2001-12-13 2003-06-19 Schubert E. Fred Light-emitting diode with planar omni-directional reflector
US20040211968A1 (en) * 2003-04-24 2004-10-28 Ming-Der Lin Light-emitting diode and method for manufacturing the same
US20070145380A1 (en) * 2006-05-19 2007-06-28 Shum Frank T Low optical loss electrode structures for LEDs

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0683921B1 (en) * 1993-02-04 2004-06-16 Cornell Research Foundation, Inc. Microstructures and single mask, single-crystal process for fabrication thereof
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US6515370B2 (en) * 1997-03-10 2003-02-04 Seiko Epson Corporation Electronic component and semiconductor device, method for manufacturing the same, circuit board have the same mounted thereon, and electronic equipment having the circuit board
WO1998046811A1 (fr) * 1997-04-17 1998-10-22 Sekisui Chemical Co., Ltd. Particules conductrices, procede et dispositif de fabrication, structure anisotrope a adhesif et raccordement conducteur, composants de circuit electronique et leur procede de fabrication
EP1419534A2 (de) * 2001-08-24 2004-05-19 Schott Glas Verfahren zum kontaktieren und gehäusen von integrierten schaltungen
DE10164800B4 (de) * 2001-11-02 2005-03-31 Infineon Technologies Ag Verfahren zur Herstellung eines elektronischen Bauelements mit mehreren übereinander gestapelten und miteinander kontaktierten Chips
JP2004332017A (ja) * 2003-05-01 2004-11-25 Sumitomo Electric Ind Ltd ハンダ皮膜の製造方法、ハンダ皮膜を備えたヒートシンク、および半導体素子とヒートシンクの接合体
WO2005089098A2 (en) * 2004-01-14 2005-09-29 The Regents Of The University Of California Ultra broadband mirror using subwavelength grating
DE102007003282B4 (de) 2007-01-23 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030111667A1 (en) * 2001-12-13 2003-06-19 Schubert E. Fred Light-emitting diode with planar omni-directional reflector
US20040211968A1 (en) * 2003-04-24 2004-10-28 Ming-Der Lin Light-emitting diode and method for manufacturing the same
US20070145380A1 (en) * 2006-05-19 2007-06-28 Shum Frank T Low optical loss electrode structures for LEDs

Also Published As

Publication number Publication date
JP5921192B2 (ja) 2016-05-24
JP2012501065A (ja) 2012-01-12
CN102099926B (zh) 2013-04-24
WO2010020213A1 (de) 2010-02-25
DE102008039360B4 (de) 2021-05-12
US8761219B2 (en) 2014-06-24
EP2316133A1 (de) 2011-05-04
KR20110068974A (ko) 2011-06-22
DE102008039360A1 (de) 2010-02-25
CN102099926A (zh) 2011-06-15
US20110164644A1 (en) 2011-07-07

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