JP2004179327A - 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法 - Google Patents

半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法 Download PDF

Info

Publication number
JP2004179327A
JP2004179327A JP2002342797A JP2002342797A JP2004179327A JP 2004179327 A JP2004179327 A JP 2004179327A JP 2002342797 A JP2002342797 A JP 2002342797A JP 2002342797 A JP2002342797 A JP 2002342797A JP 2004179327 A JP2004179327 A JP 2004179327A
Authority
JP
Japan
Prior art keywords
alloy material
film
alloy
semiconductor
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002342797A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004179327A5 (enExample
Inventor
Kazunori Inoue
和範 井上
Chiharu Ishikura
千春 石倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Sharp Corp
Original Assignee
Tanaka Kikinzoku Kogyo KK
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK, Sharp Corp filed Critical Tanaka Kikinzoku Kogyo KK
Priority to JP2002342797A priority Critical patent/JP2004179327A/ja
Priority to KR1020057009567A priority patent/KR100742672B1/ko
Priority to AU2003280621A priority patent/AU2003280621A1/en
Priority to PCT/JP2003/013890 priority patent/WO2004049415A1/ja
Priority to US10/536,406 priority patent/US20060226546A1/en
Priority to CNB2003801042815A priority patent/CN100386848C/zh
Priority to TW092133066A priority patent/TW200416748A/zh
Publication of JP2004179327A publication Critical patent/JP2004179327A/ja
Publication of JP2004179327A5 publication Critical patent/JP2004179327A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
JP2002342797A 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法 Pending JP2004179327A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002342797A JP2004179327A (ja) 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法
KR1020057009567A KR100742672B1 (ko) 2002-11-26 2003-10-29 반도체용 합금재료, 그 합금재료를 사용한 반도체 칩 및제조방법
AU2003280621A AU2003280621A1 (en) 2002-11-26 2003-10-29 Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing same
PCT/JP2003/013890 WO2004049415A1 (ja) 2002-11-26 2003-10-29 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法
US10/536,406 US20060226546A1 (en) 2002-11-26 2003-10-29 Alloy material for semiconductors, semiconductor chip using the alloy material and production method of the same
CNB2003801042815A CN100386848C (zh) 2002-11-26 2003-10-29 半导体用合金材料及半导体芯片的制备方法
TW092133066A TW200416748A (en) 2002-11-26 2003-11-25 Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002342797A JP2004179327A (ja) 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法

Publications (2)

Publication Number Publication Date
JP2004179327A true JP2004179327A (ja) 2004-06-24
JP2004179327A5 JP2004179327A5 (enExample) 2005-09-29

Family

ID=32375901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002342797A Pending JP2004179327A (ja) 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法

Country Status (7)

Country Link
US (1) US20060226546A1 (enExample)
JP (1) JP2004179327A (enExample)
KR (1) KR100742672B1 (enExample)
CN (1) CN100386848C (enExample)
AU (1) AU2003280621A1 (enExample)
TW (1) TW200416748A (enExample)
WO (1) WO2004049415A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8231990B2 (en) * 2006-12-21 2012-07-31 Kobe Steel, Ltd. Alloy film for a metal separator for a fuel cell, a manufacturing method thereof and a target material for sputtering, as well as a metal separator, and a fuel cell
JP4176133B1 (ja) * 2007-06-06 2008-11-05 田中貴金属工業株式会社 プローブピン
JP5116101B2 (ja) * 2007-06-28 2013-01-09 新日鉄住金マテリアルズ株式会社 半導体実装用ボンディングワイヤ及びその製造方法
DE102014111895A1 (de) * 2014-08-20 2016-02-25 Infineon Technologies Ag Metallisierte elektrische Komponente

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770496A (en) * 1971-06-25 1973-11-06 Du Pont Elimination of dielectric degradation in printed bold/dielectric/palladium-silver structures
JPS54144870A (en) * 1978-05-04 1979-11-12 Mitsubishi Electric Corp Wire bonding method for semiconductor element
JPS60254761A (ja) * 1984-05-31 1985-12-16 Sumitomo Electric Ind Ltd 半導体装置用リ−ドフレ−ム
JPS6173326A (ja) * 1984-09-19 1986-04-15 Hitachi Ltd 半導体装置の製造方法
JPH03155134A (ja) * 1989-11-13 1991-07-03 Seiko Epson Corp 集積回路装置の配線電極
US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
JPH05109818A (ja) * 1991-10-16 1993-04-30 Hitachi Chem Co Ltd 半導体チツプの接続構造
DE69322233T2 (de) * 1992-08-27 1999-07-08 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Elektronisches Teil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung
JPH118341A (ja) * 1997-06-18 1999-01-12 Mitsui High Tec Inc 半導体装置用リードフレーム
JPH11233783A (ja) * 1998-02-17 1999-08-27 Sharp Corp 薄膜トランジスタおよびその製造方法
KR100717667B1 (ko) * 2000-09-18 2007-05-11 신닛뽄세이테쯔 카부시키카이샤 반도체용 본딩 와이어 및 그 제조 방법
JP3707548B2 (ja) * 2002-03-12 2005-10-19 株式会社三井ハイテック リードフレーム及びリードフレームの製造方法

Also Published As

Publication number Publication date
WO2004049415A1 (ja) 2004-06-10
CN1717783A (zh) 2006-01-04
TW200416748A (en) 2004-09-01
AU2003280621A8 (en) 2004-06-18
CN100386848C (zh) 2008-05-07
KR20050088086A (ko) 2005-09-01
TWI304220B (enExample) 2008-12-11
US20060226546A1 (en) 2006-10-12
AU2003280621A1 (en) 2004-06-18
KR100742672B1 (ko) 2007-07-25

Similar Documents

Publication Publication Date Title
JP3462720B2 (ja) ｎ型窒化物半導体の電極及び前記電極を有する半導体素子並びにその製造方法
CA2155091C (en) Bonding material and bonding method for electric element
US8404359B2 (en) Solder layer and electronic device bonding substrate and submount using the same
US8624397B2 (en) Electrode layer structure for a thin-film transistor and process for manufacture thereof
JP2002511190A (ja) シリコン太陽電池および他のデバイス用の自己ドーピング陰極および陽極のための方法および装置
JPH03133176A (ja) 炭化珪素半導体装置およびその製造方法
US5635764A (en) Surface treated structure for solder joint
CN1624176A (zh) 平板显示器用Ag基合金配线电极膜、Ag基合金溅射靶
JP2003318454A (ja) 熱電変換素子及び熱電モジュール
JP2004179327A (ja) 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法
JP2565655B2 (ja) 低抵抗化合物
JP7283053B2 (ja) 炭化珪素半導体装置、炭化珪素半導体組立体および炭化珪素半導体装置の製造方法
US20250266259A1 (en) Chip with a silicon carbide substrate and an electrical contact
KR20180022611A (ko) 열전소자 및 이를 포함하는 열전모듈
JPS5936425B2 (ja) 中間層を有するリ−ドフレ−ム構造
JPS6148776B2 (enExample)
WO2016157589A1 (ja) 放射線検出器用ｕｂｍ電極構造体、放射線検出器及びそれらの製造方法
JP6434859B2 (ja) パワー半導体素子用Ａｌ合金膜
JPS59189625A (ja) 半導体装置の製造方法
JP2005277343A (ja) 熱電変換素子およびその製造方法
JP2020102504A (ja) パワーモジュール
Nielsen Compound formation and energy levels at the interface betweeb amorphous Se and Cu, Ag and Al electrodes
JPS63253633A (ja) 半導体装置の製造方法
JPH02307224A (ja) 半導体装置およびその製造方法
JP2002124486A (ja) 化合物半導体の電極製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050427

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050427

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081209

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090129

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090407