JP2004079887A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2004079887A
JP2004079887A JP2002240537A JP2002240537A JP2004079887A JP 2004079887 A JP2004079887 A JP 2004079887A JP 2002240537 A JP2002240537 A JP 2002240537A JP 2002240537 A JP2002240537 A JP 2002240537A JP 2004079887 A JP2004079887 A JP 2004079887A
Authority
JP
Japan
Prior art keywords
crystal film
semiconductor device
sige
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002240537A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004079887A5 (enExample
Inventor
Kazuhiro Aihara
相原　一洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002240537A priority Critical patent/JP2004079887A/ja
Priority to TW091132546A priority patent/TWI271854B/zh
Priority to US10/346,976 priority patent/US6825507B2/en
Priority to CNB031063454A priority patent/CN1293644C/zh
Priority to KR10-2003-0041033A priority patent/KR100538192B1/ko
Publication of JP2004079887A publication Critical patent/JP2004079887A/ja
Publication of JP2004079887A5 publication Critical patent/JP2004079887A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28255—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2002240537A 2002-08-21 2002-08-21 半導体装置 Pending JP2004079887A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002240537A JP2004079887A (ja) 2002-08-21 2002-08-21 半導体装置
TW091132546A TWI271854B (en) 2002-08-21 2002-11-05 Semiconductor device
US10/346,976 US6825507B2 (en) 2002-08-21 2003-01-21 Semiconductor device having high electron mobility comprising a SiGe/Si/SiGe substrate
CNB031063454A CN1293644C (zh) 2002-08-21 2003-02-25 半导体器件
KR10-2003-0041033A KR100538192B1 (ko) 2002-08-21 2003-06-24 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002240537A JP2004079887A (ja) 2002-08-21 2002-08-21 半導体装置

Publications (2)

Publication Number Publication Date
JP2004079887A true JP2004079887A (ja) 2004-03-11
JP2004079887A5 JP2004079887A5 (enExample) 2005-09-15

Family

ID=31884521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002240537A Pending JP2004079887A (ja) 2002-08-21 2002-08-21 半導体装置

Country Status (5)

Country Link
US (1) US6825507B2 (enExample)
JP (1) JP2004079887A (enExample)
KR (1) KR100538192B1 (enExample)
CN (1) CN1293644C (enExample)
TW (1) TWI271854B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7233018B2 (en) 2004-11-17 2007-06-19 Electronics And Telecommunications Research Institute High voltage MOSFET having Si/SiGe heterojuction structure and method of manufacturing the same
JP2007537601A (ja) * 2004-05-14 2007-12-20 アプライド　マテリアルズ　インコーポレイテッド 選択的堆積プロセスを使用したｍｏｓｆｅｔデバイスの作製方法
JP2008527742A (ja) * 2005-01-18 2008-07-24 インテル・コーポレーション ストレインド・チャネル領域を伴った非平面ｍｏｓ構造

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1620728A (zh) * 2002-01-21 2005-05-25 松下电器产业株式会社 半导体装置
DE10360874B4 (de) * 2003-12-23 2009-06-04 Infineon Technologies Ag Feldeffekttransistor mit Heteroschichtstruktur sowie zugehöriges Herstellungsverfahren
US7227205B2 (en) * 2004-06-24 2007-06-05 International Business Machines Corporation Strained-silicon CMOS device and method
TWI463526B (zh) 2004-06-24 2014-12-01 Ibm 改良具應力矽之ｃｍｏｓ元件的方法及以該方法製備而成的元件
US7288448B2 (en) * 2004-08-24 2007-10-30 Orlowski Marius K Method and apparatus for mobility enhancement in a semiconductor device
US7335929B2 (en) * 2004-10-18 2008-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor with a strained region and method of manufacture
US7994005B2 (en) * 2007-11-01 2011-08-09 Alpha & Omega Semiconductor, Ltd High-mobility trench MOSFETs
US9245971B2 (en) * 2013-09-27 2016-01-26 Qualcomm Incorporated Semiconductor device having high mobility channel
CN112737895A (zh) 2015-03-11 2021-04-30 法斯埃托股份有限公司 用于web api通信的系统和方法
WO2019109033A1 (en) 2017-12-01 2019-06-06 Fasetto, Inc. Systems and methods for improved data encryption

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235334A (ja) 1992-02-24 1993-09-10 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
US5461250A (en) 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
JPH07288323A (ja) 1994-04-19 1995-10-31 Sony Corp 絶縁ゲート型電界効果トランジスタとその製法
KR0135804B1 (ko) 1994-06-13 1998-04-24 김광호 실리콘 온 인슐레이터(soi) 트랜지스터
US6969875B2 (en) * 2000-05-26 2005-11-29 Amberwave Systems Corporation Buried channel strained silicon FET using a supply layer created through ion implantation
US6680496B1 (en) * 2002-07-08 2004-01-20 Amberwave Systems Corp. Back-biasing to populate strained layer quantum wells

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007537601A (ja) * 2004-05-14 2007-12-20 アプライド　マテリアルズ　インコーポレイテッド 選択的堆積プロセスを使用したｍｏｓｆｅｔデバイスの作製方法
US7233018B2 (en) 2004-11-17 2007-06-19 Electronics And Telecommunications Research Institute High voltage MOSFET having Si/SiGe heterojuction structure and method of manufacturing the same
JP2008527742A (ja) * 2005-01-18 2008-07-24 インテル・コーポレーション ストレインド・チャネル領域を伴った非平面ｍｏｓ構造

Also Published As

Publication number Publication date
KR100538192B1 (ko) 2005-12-22
KR20040018122A (ko) 2004-03-02
US20040036122A1 (en) 2004-02-26
TWI271854B (en) 2007-01-21
CN1477718A (zh) 2004-02-25
CN1293644C (zh) 2007-01-03
US6825507B2 (en) 2004-11-30
TW200403837A (en) 2004-03-01

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