TWI271854B - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- TWI271854B TWI271854B TW091132546A TW91132546A TWI271854B TW I271854 B TWI271854 B TW I271854B TW 091132546 A TW091132546 A TW 091132546A TW 91132546 A TW91132546 A TW 91132546A TW I271854 B TWI271854 B TW I271854B
- Authority
- TW
- Taiwan
- Prior art keywords
- crystal film
- film
- semiconductor device
- sige
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 239000013078 crystal Substances 0.000 claims abstract description 150
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000003647 oxidation Effects 0.000 claims abstract description 22
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 claims 1
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract description 56
- 239000012212 insulator Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 169
- 239000010410 layer Substances 0.000 description 14
- 239000002344 surface layer Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/801—FETs having heterojunction gate electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28255—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002240537A JP2004079887A (ja) | 2002-08-21 | 2002-08-21 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200403837A TW200403837A (en) | 2004-03-01 |
| TWI271854B true TWI271854B (en) | 2007-01-21 |
Family
ID=31884521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091132546A TWI271854B (en) | 2002-08-21 | 2002-11-05 | Semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6825507B2 (enExample) |
| JP (1) | JP2004079887A (enExample) |
| KR (1) | KR100538192B1 (enExample) |
| CN (1) | CN1293644C (enExample) |
| TW (1) | TWI271854B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003063254A1 (en) * | 2002-01-21 | 2003-07-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
| US7132338B2 (en) * | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
| DE10360874B4 (de) * | 2003-12-23 | 2009-06-04 | Infineon Technologies Ag | Feldeffekttransistor mit Heteroschichtstruktur sowie zugehöriges Herstellungsverfahren |
| US7227205B2 (en) * | 2004-06-24 | 2007-06-05 | International Business Machines Corporation | Strained-silicon CMOS device and method |
| TWI463526B (zh) | 2004-06-24 | 2014-12-01 | Ibm | 改良具應力矽之ｃｍｏｓ元件的方法及以該方法製備而成的元件 |
| US7288448B2 (en) * | 2004-08-24 | 2007-10-30 | Orlowski Marius K | Method and apparatus for mobility enhancement in a semiconductor device |
| US7335929B2 (en) * | 2004-10-18 | 2008-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor with a strained region and method of manufacture |
| KR100592749B1 (ko) | 2004-11-17 | 2006-06-26 | 한국전자통신연구원 | 실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압전계효과 트랜지스터 및 그 제조 방법 |
| US7193279B2 (en) * | 2005-01-18 | 2007-03-20 | Intel Corporation | Non-planar MOS structure with a strained channel region |
| US7994005B2 (en) * | 2007-11-01 | 2011-08-09 | Alpha & Omega Semiconductor, Ltd | High-mobility trench MOSFETs |
| US9245971B2 (en) * | 2013-09-27 | 2016-01-26 | Qualcomm Incorporated | Semiconductor device having high mobility channel |
| KR102452169B1 (ko) | 2015-03-11 | 2022-10-11 | 파세토, 인크. | 웹 api 통신을 위한 시스템 및 방법 |
| AU2018374384A1 (en) | 2017-12-01 | 2020-07-23 | Fasetto, Inc. | Systems and methods for improved data encryption |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05235334A (ja) | 1992-02-24 | 1993-09-10 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ |
| US5461250A (en) | 1992-08-10 | 1995-10-24 | International Business Machines Corporation | SiGe thin film or SOI MOSFET and method for making the same |
| JPH07288323A (ja) | 1994-04-19 | 1995-10-31 | Sony Corp | 絶縁ゲート型電界効果トランジスタとその製法 |
| KR0135804B1 (ko) | 1994-06-13 | 1998-04-24 | 김광호 | 실리콘 온 인슐레이터(soi) 트랜지스터 |
| AU2001263211A1 (en) * | 2000-05-26 | 2001-12-11 | Amberwave Systems Corporation | Buried channel strained silicon fet using an ion implanted doped layer |
| US6680496B1 (en) * | 2002-07-08 | 2004-01-20 | Amberwave Systems Corp. | Back-biasing to populate strained layer quantum wells |
-
2002
- 2002-08-21 JP JP2002240537A patent/JP2004079887A/ja active Pending
- 2002-11-05 TW TW091132546A patent/TWI271854B/zh not_active IP Right Cessation
-
2003
- 2003-01-21 US US10/346,976 patent/US6825507B2/en not_active Expired - Fee Related
- 2003-02-25 CN CNB031063454A patent/CN1293644C/zh not_active Expired - Fee Related
- 2003-06-24 KR KR10-2003-0041033A patent/KR100538192B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1477718A (zh) | 2004-02-25 |
| CN1293644C (zh) | 2007-01-03 |
| JP2004079887A (ja) | 2004-03-11 |
| KR100538192B1 (ko) | 2005-12-22 |
| US20040036122A1 (en) | 2004-02-26 |
| KR20040018122A (ko) | 2004-03-02 |
| US6825507B2 (en) | 2004-11-30 |
| TW200403837A (en) | 2004-03-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |