CN1293644C - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1293644C
CN1293644C CNB031063454A CN03106345A CN1293644C CN 1293644 C CN1293644 C CN 1293644C CN B031063454 A CNB031063454 A CN B031063454A CN 03106345 A CN03106345 A CN 03106345A CN 1293644 C CN1293644 C CN 1293644C
Authority
CN
China
Prior art keywords
film
crystalline film
semiconductor device
sige
mobility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031063454A
Other languages
English (en)
Chinese (zh)
Other versions
CN1477718A (zh
Inventor
相原一洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1477718A publication Critical patent/CN1477718A/zh
Application granted granted Critical
Publication of CN1293644C publication Critical patent/CN1293644C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28255—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB031063454A 2002-08-21 2003-02-25 半导体器件 Expired - Fee Related CN1293644C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP240537/2002 2002-08-21
JP240537/02 2002-08-21
JP2002240537A JP2004079887A (ja) 2002-08-21 2002-08-21 半導体装置

Publications (2)

Publication Number Publication Date
CN1477718A CN1477718A (zh) 2004-02-25
CN1293644C true CN1293644C (zh) 2007-01-03

Family

ID=31884521

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031063454A Expired - Fee Related CN1293644C (zh) 2002-08-21 2003-02-25 半导体器件

Country Status (5)

Country Link
US (1) US6825507B2 (enExample)
JP (1) JP2004079887A (enExample)
KR (1) KR100538192B1 (enExample)
CN (1) CN1293644C (enExample)
TW (1) TWI271854B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101425539B (zh) * 2007-11-01 2010-12-22 万国半导体股份有限公司 高迁移率沟槽金属氧化物半导体场效应晶体管

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1620728A (zh) * 2002-01-21 2005-05-25 松下电器产业株式会社 半导体装置
US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
DE10360874B4 (de) * 2003-12-23 2009-06-04 Infineon Technologies Ag Feldeffekttransistor mit Heteroschichtstruktur sowie zugehöriges Herstellungsverfahren
US7227205B2 (en) * 2004-06-24 2007-06-05 International Business Machines Corporation Strained-silicon CMOS device and method
TWI463526B (zh) 2004-06-24 2014-12-01 Ibm 改良具應力矽之ｃｍｏｓ元件的方法及以該方法製備而成的元件
US7288448B2 (en) * 2004-08-24 2007-10-30 Orlowski Marius K Method and apparatus for mobility enhancement in a semiconductor device
US7335929B2 (en) * 2004-10-18 2008-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor with a strained region and method of manufacture
KR100592749B1 (ko) 2004-11-17 2006-06-26 한국전자통신연구원 실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압전계효과 트랜지스터 및 그 제조 방법
US7193279B2 (en) * 2005-01-18 2007-03-20 Intel Corporation Non-planar MOS structure with a strained channel region
US9245971B2 (en) * 2013-09-27 2016-01-26 Qualcomm Incorporated Semiconductor device having high mobility channel
CN112737895A (zh) 2015-03-11 2021-04-30 法斯埃托股份有限公司 用于web api通信的系统和方法
WO2019109033A1 (en) 2017-12-01 2019-06-06 Fasetto, Inc. Systems and methods for improved data encryption

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235334A (ja) 1992-02-24 1993-09-10 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
US5461250A (en) 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
JPH07288323A (ja) 1994-04-19 1995-10-31 Sony Corp 絶縁ゲート型電界効果トランジスタとその製法
KR0135804B1 (ko) 1994-06-13 1998-04-24 김광호 실리콘 온 인슐레이터(soi) 트랜지스터
US6969875B2 (en) * 2000-05-26 2005-11-29 Amberwave Systems Corporation Buried channel strained silicon FET using a supply layer created through ion implantation
US6680496B1 (en) * 2002-07-08 2004-01-20 Amberwave Systems Corp. Back-biasing to populate strained layer quantum wells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101425539B (zh) * 2007-11-01 2010-12-22 万国半导体股份有限公司 高迁移率沟槽金属氧化物半导体场效应晶体管

Also Published As

Publication number Publication date
KR100538192B1 (ko) 2005-12-22
KR20040018122A (ko) 2004-03-02
US20040036122A1 (en) 2004-02-26
TWI271854B (en) 2007-01-21
CN1477718A (zh) 2004-02-25
JP2004079887A (ja) 2004-03-11
US6825507B2 (en) 2004-11-30
TW200403837A (en) 2004-03-01

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070103