KR100538192B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR100538192B1
KR100538192B1 KR10-2003-0041033A KR20030041033A KR100538192B1 KR 100538192 B1 KR100538192 B1 KR 100538192B1 KR 20030041033 A KR20030041033 A KR 20030041033A KR 100538192 B1 KR100538192 B1 KR 100538192B1
Authority
KR
South Korea
Prior art keywords
crystal film
sige
film
semiconductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2003-0041033A
Other languages
English (en)
Korean (ko)
Other versions
KR20040018122A (ko
Inventor
아이하라가즈히로
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20040018122A publication Critical patent/KR20040018122A/ko
Application granted granted Critical
Publication of KR100538192B1 publication Critical patent/KR100538192B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28255—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-2003-0041033A 2002-08-21 2003-06-24 반도체 장치 Expired - Fee Related KR100538192B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002240537A JP2004079887A (ja) 2002-08-21 2002-08-21 半導体装置
JPJP-P-2002-00240537 2002-08-21

Publications (2)

Publication Number Publication Date
KR20040018122A KR20040018122A (ko) 2004-03-02
KR100538192B1 true KR100538192B1 (ko) 2005-12-22

Family

ID=31884521

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-0041033A Expired - Fee Related KR100538192B1 (ko) 2002-08-21 2003-06-24 반도체 장치

Country Status (5)

Country Link
US (1) US6825507B2 (enExample)
JP (1) JP2004079887A (enExample)
KR (1) KR100538192B1 (enExample)
CN (1) CN1293644C (enExample)
TW (1) TWI271854B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003063254A1 (en) * 2002-01-21 2003-07-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
DE10360874B4 (de) * 2003-12-23 2009-06-04 Infineon Technologies Ag Feldeffekttransistor mit Heteroschichtstruktur sowie zugehöriges Herstellungsverfahren
US7227205B2 (en) * 2004-06-24 2007-06-05 International Business Machines Corporation Strained-silicon CMOS device and method
TWI463526B (zh) 2004-06-24 2014-12-01 Ibm 改良具應力矽之ｃｍｏｓ元件的方法及以該方法製備而成的元件
US7288448B2 (en) * 2004-08-24 2007-10-30 Orlowski Marius K Method and apparatus for mobility enhancement in a semiconductor device
US7335929B2 (en) * 2004-10-18 2008-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor with a strained region and method of manufacture
KR100592749B1 (ko) 2004-11-17 2006-06-26 한국전자통신연구원 실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압전계효과 트랜지스터 및 그 제조 방법
US7193279B2 (en) * 2005-01-18 2007-03-20 Intel Corporation Non-planar MOS structure with a strained channel region
US7994005B2 (en) * 2007-11-01 2011-08-09 Alpha & Omega Semiconductor, Ltd High-mobility trench MOSFETs
US9245971B2 (en) * 2013-09-27 2016-01-26 Qualcomm Incorporated Semiconductor device having high mobility channel
KR102452169B1 (ko) 2015-03-11 2022-10-11 파세토, 인크. 웹 api 통신을 위한 시스템 및 방법
AU2018374384A1 (en) 2017-12-01 2020-07-23 Fasetto, Inc. Systems and methods for improved data encryption

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235334A (ja) 1992-02-24 1993-09-10 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
US5461250A (en) 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
JPH07288323A (ja) 1994-04-19 1995-10-31 Sony Corp 絶縁ゲート型電界効果トランジスタとその製法
KR0135804B1 (ko) 1994-06-13 1998-04-24 김광호 실리콘 온 인슐레이터(soi) 트랜지스터
AU2001263211A1 (en) * 2000-05-26 2001-12-11 Amberwave Systems Corporation Buried channel strained silicon fet using an ion implanted doped layer
US6680496B1 (en) * 2002-07-08 2004-01-20 Amberwave Systems Corp. Back-biasing to populate strained layer quantum wells

Also Published As

Publication number Publication date
CN1477718A (zh) 2004-02-25
CN1293644C (zh) 2007-01-03
TWI271854B (en) 2007-01-21
JP2004079887A (ja) 2004-03-11
US20040036122A1 (en) 2004-02-26
KR20040018122A (ko) 2004-03-02
US6825507B2 (en) 2004-11-30
TW200403837A (en) 2004-03-01

Similar Documents

Publication Publication Date Title
JP3199808B2 (ja) 半導体集積回路装置
KR100538192B1 (ko) 반도체 장치
KR950012746A (ko) 누설전류가 감소된 박막 트랜지스터 및 그 제조방법
US8106465B2 (en) Semiconductor device
JPH04369271A (ja) 薄膜トランジスタ
JPH03268435A (ja) Ｍｏｓ型半導体装置及びその製造方法
JP2800702B2 (ja) 半導体装置
US20120012918A1 (en) Semiconductor structure and method for manufacturing the same
JP2006173538A (ja) 半導体装置
KR940009582B1 (ko) Mos형 반도체장치
US8368151B2 (en) Semiconductor device
US5502322A (en) Transistor having a nonuniform doping channel
JPH04254381A (ja) 半導体集積回路装置
US6548356B2 (en) Thin film transistor
JPH0465549B2 (enExample)
JP2003007723A (ja) 半導体素子及び半導体集積回路
KR970008643A (ko) 반도체 집적 회로 장치의 제조 방법
JPH04280474A (ja) Ｍｏｓ型トランジスタ
JP7228020B2 (ja) 半導体装置
JP2540754B2 (ja) 高耐圧トランジスタ
JPS63122175A (ja) Ｍｏｓ電界効果トランジスタ
KR940010926B1 (ko) Mos트랜지스터 반도체 장치 및 그의 제조방법
JP3017838B2 (ja) 半導体装置およびその製造方法
JPH06209106A (ja) 半導体装置
JP2954311B2 (ja) Ｍｏｓトランジスタ

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20081216

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20081216

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000