JPWO2009157040A1 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 239000013078 crystal Substances 0.000 claims abstract description 48
- 239000002344 surface layer Substances 0.000 claims abstract description 16
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims description 43
- 229910052739 hydrogen Inorganic materials 0.000 claims description 43
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000137 annealing Methods 0.000 description 39
- 238000005259 measurement Methods 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 11
- 230000007423 decrease Effects 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000007790 solid phase Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
SiまたはSiGeで形成された活性領域を、表層部に含む基板と、
前記活性領域の上にゲート絶縁膜を介して配置されたゲート電極と、
前記ゲート電極の両側の前記基板の表層部に形成されたソース及びドレインと
を有し、
前記ゲート電極の下の前記活性領域の表面は、該活性領域の縁から内側に向かって高くなるように傾斜した斜面を含み、該斜面は、(111)と等価な結晶面または(331)と等価な結晶面を有する。
SiまたはSiGeの(110)と等価な結晶面が活性領域に露出した基板を準備する工程と、
前記基板を、水素または希ガス雰囲気中で熱処理することにより、前記活性領域の表層部のSi原子またはGe原子をマイグレーションさせることにより、該活性領域の表面の少なくとも一部に、SiまたはSiGeの(111)と等価な結晶面または(331)と等価な結晶面で構成された斜面を生じさせる工程と、
前記熱処理後、前記斜面の直下の前期活性領域の表層部が、チャネルの少なくとも一部になるMISFETを形成する工程と
を有する。
Claims (17)
- SiまたはSiGeで形成された活性領域を、表層部に含む基板と、
前記活性領域の上にゲート絶縁膜を介して配置されたゲート電極と、
前記ゲート電極の両側の前記基板の表層部に形成されたソース及びドレインと
を有し、
前記ゲート電極の下の前記活性領域の表面は、該活性領域の縁から内側に向かって高くなるように傾斜した斜面を含み、該斜面は、(111)と等価な結晶面または(331)と等価な結晶面を有する半導体装置。 - 前記斜面は、前記活性領域の縁から内側に延びる(111)と等価な結晶面を有する部分と、該(111)と等価な結晶面に連続し、さらに内側に延びる(331)と等価な結晶面を有する部分とを含む請求項1に記載の半導体装置。
- 前記ゲート電極の下の前記活性領域の表面は、前記斜面よりも内側に、(110)と等価な結晶面を有する平坦な部分を含む請求項1または2に記載の半導体装置。
- 前記活性領域のうち、前記ゲート電極と重なっている部分の一方の縁から他方の縁までの長さであるゲート幅のうち、前記斜面の占める割合が30%以上である請求項1乃至3のいずれか1項に記載の半導体装置。
- 前記活性領域の一方の縁から内側に向かって延びる(331)と等価な結晶面が、他方の縁から内側に向かって延びる(331)と等価な結晶面に接している請求項2に記載の半導体装置。
- 前記活性領域の一対の縁が、SiまたはSiGeの<110>方向と平行に配置され、前記ゲート電極は、該活性領域の<110>方向と平行な一対の縁と交差し、<001>方向と平行になるように配置されている請求項1乃至5のいずれか1項に記載の半導体装置。
- SiまたはSiGeの(110)と等価な結晶面が活性領域に露出した基板を準備する工程と、
前記基板を、水素または希ガス雰囲気中で熱処理することにより、前記活性領域の表層部のSi原子またはGe原子をマイグレーションさせることにより、該活性領域の表面の少なくとも一部に、SiまたはSiGeの(111)と等価な結晶面または(331)と等価な結晶面で構成された斜面を生じさせる工程と、
前記熱処理後、前記斜面の直下の前期活性領域の表層部が、チャネルの少なくとも一部になるMISFETを形成する工程と
を有する半導体装置の製造方法。 - 前記活性領域が、素子分離絶縁膜で取り囲まれており、前記熱処理の前において、前記活性領域の、(110)と等価な結晶面が露出した表面が、該活性領域と該素子分離絶縁膜との境界における該素子分離絶縁膜の表面よりも高くされている請求項7に記載の半導体装置の製造方法。
- 前記基板の温度が700℃〜1050℃の範囲内となる条件で前記熱処理を行う請求項7または8に記載の半導体装置の製造方法。
- 前記熱処理よりも前に、前記活性領域内に、ウェル形成のための不純物注入及びしきい値制御のための不純物注入の少なくとも一方を行い、前記熱処理後、イオン注入を行うことなく、前記活性領域の表面にゲート絶縁膜を形成する請求項7乃至9のいずれか1項に記載の半導体装置の製造方法。
- 表面に活性領域が画定された基板と、
前記活性領域の上にゲート絶縁膜を介して配置されたゲート電極と、
前記ゲート電極の両側の前記基板の表層部に形成されたソース及びドレインと
を有し、
前記ゲート電極の下の前記基板の表面は、(111)と等価な結晶面及び(331)と等価な結晶面を有する半導体装置。 - 前記ゲート電極は、平面視において前記活性領域と交差するように配置され、
前記ゲート電極の下の前記基板の表面は、前記活性領域の縁から内側に向かって高くなるように傾斜した斜面を含むことを特徴とする請求項11に記載の半導体装置。 - 前記斜面は、前記活性領域の縁から内側に延びる(111)と等価な結晶面を有する部分と、該(111)と等価な結晶面に連続し、さらに内側に延びる(331)と等価な結晶面を有する部分とを含む請求項11に記載の半導体装置。
- 前記ゲート電極の下の前記活性領域の表面は、前記斜面よりも内側に、(110)と等価な結晶面を有する平坦な部分を含む請求項11乃至13のいずれか1項に記載の半導体装置。
- 前記活性領域のうち、前記ゲート電極と重なっている部分の一方の縁から他方の縁までの長さであるゲート幅のうち、前記斜面の占める割合が30%以上である請求項11乃至14のいずれか1項に記載の半導体装置。
- 前記活性領域の一方の縁から内側に向かって延びる(331)と等価な結晶面が、他方の縁から内側に向かって延びる(331)と等価な結晶面に接している請求項13に記載の半導体装置。
- 前記活性領域の一対の縁が、SiまたはSiGeの<110>方向と平行に配置され、前記ゲート電極は、該活性領域の<110>方向と平行な一対の縁と交差し、<001>方向と平行になるように配置されている請求項11乃至16のいずれか1項に記載の半導体装置。
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WO2005122272A1 (ja) * | 2004-06-08 | 2005-12-22 | Nec Corporation | 歪みシリコンチャネル層を有するmis型電界効果トランジスタ |
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US20110089474A1 (en) | 2011-04-21 |
JP5158197B2 (ja) | 2013-03-06 |
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US8362530B2 (en) | 2013-01-29 |
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