CN100578797C - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN100578797C CN100578797C CN200710198916A CN200710198916A CN100578797C CN 100578797 C CN100578797 C CN 100578797C CN 200710198916 A CN200710198916 A CN 200710198916A CN 200710198916 A CN200710198916 A CN 200710198916A CN 100578797 C CN100578797 C CN 100578797C
- Authority
- CN
- China
- Prior art keywords
- semiconductor region
- raceway groove
- layer
- mis transistor
- sige
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 49
- 239000012212 insulator Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 6
- 230000006835 compression Effects 0.000 claims description 4
- 238000007906 compression Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 235000009508 confectionery Nutrition 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006332020 | 2006-12-08 | ||
JP2006332020A JP4310399B2 (ja) | 2006-12-08 | 2006-12-08 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101202288A CN101202288A (zh) | 2008-06-18 |
CN100578797C true CN100578797C (zh) | 2010-01-06 |
Family
ID=39496928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710198916A Active CN100578797C (zh) | 2006-12-08 | 2007-12-07 | 半导体器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8008751B2 (zh) |
JP (1) | JP4310399B2 (zh) |
CN (1) | CN100578797C (zh) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2918793B1 (fr) * | 2007-07-11 | 2009-10-09 | Commissariat Energie Atomique | Procede de fabrication d'un substrat semiconducteur-sur- isolant pour la microelectronique et l'optoelectronique. |
US7842982B2 (en) | 2008-01-29 | 2010-11-30 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
JP4543093B2 (ja) * | 2008-01-29 | 2010-09-15 | 株式会社東芝 | 半導体装置 |
JP2010034470A (ja) * | 2008-07-31 | 2010-02-12 | Renesas Technology Corp | 半導体装置 |
US8084308B2 (en) * | 2009-05-21 | 2011-12-27 | International Business Machines Corporation | Single gate inverter nanowire mesh |
JP2011014762A (ja) * | 2009-07-03 | 2011-01-20 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
US20110049473A1 (en) | 2009-08-28 | 2011-03-03 | International Business Machines Corporation | Film Wrapped NFET Nanowire |
US8169025B2 (en) * | 2010-01-19 | 2012-05-01 | International Business Machines Corporation | Strained CMOS device, circuit and method of fabrication |
JP2011176195A (ja) * | 2010-02-25 | 2011-09-08 | Toshiba Corp | 窒化物半導体装置 |
US8558279B2 (en) * | 2010-09-23 | 2013-10-15 | Intel Corporation | Non-planar device having uniaxially strained semiconductor body and method of making same |
JP5529766B2 (ja) * | 2011-01-05 | 2014-06-25 | 猛英 白土 | 半導体装置及びその製造方法 |
JP5325932B2 (ja) * | 2011-05-27 | 2013-10-23 | 株式会社東芝 | 半導体装置およびその製造方法 |
US9761666B2 (en) * | 2011-06-16 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained channel field effect transistor |
CN103107192B (zh) * | 2011-11-10 | 2016-05-18 | 中芯国际集成电路制造(北京)有限公司 | 半导体装置及其制造方法 |
CN102437085B (zh) * | 2011-11-16 | 2014-12-10 | 西安电子科技大学 | 机械致单轴应变soi晶圆的制作方法 |
CN102437019B (zh) * | 2011-11-16 | 2014-09-24 | 西安电子科技大学 | 基于机械弯曲台的SiN埋绝缘层上单轴应变SGOI晶圆的制作方法 |
DE112011105970B4 (de) * | 2011-12-19 | 2020-12-03 | Intel Corporation | CMOS-Implementierung aus Germanium und lll-V-Nanodrähten und -Nanobändern in Gate-Rundum-Architektur |
US9087687B2 (en) * | 2011-12-23 | 2015-07-21 | International Business Machines Corporation | Thin heterostructure channel device |
CN103999200B (zh) * | 2011-12-23 | 2016-12-28 | 英特尔公司 | 具有包含不同材料取向或组成的纳米线或半导体主体的共衬底半导体器件 |
US9224808B2 (en) * | 2011-12-23 | 2015-12-29 | Intel Corporation | Uniaxially strained nanowire structure |
US8828851B2 (en) * | 2012-02-01 | 2014-09-09 | Stmicroeletronics, Inc. | Method to enable the formation of silicon germanium channel of FDSOI devices for PFET threshold voltage engineering |
US8617968B1 (en) | 2012-06-18 | 2013-12-31 | International Business Machines Corporation | Strained silicon and strained silicon germanium on insulator metal oxide semiconductor field effect transistors (MOSFETs) |
US8497171B1 (en) * | 2012-07-05 | 2013-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET method and structure with embedded underlying anti-punch through layer |
US20140054705A1 (en) * | 2012-08-27 | 2014-02-27 | International Business Machines Corporation | Silicon germanium channel with silicon buffer regions for fin field effect transistor device |
US8633516B1 (en) * | 2012-09-28 | 2014-01-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain stack stressor for semiconductor device |
US8946063B2 (en) * | 2012-11-30 | 2015-02-03 | International Business Machines Corporation | Semiconductor device having SSOI substrate with relaxed tensile stress |
US8785284B1 (en) * | 2013-02-20 | 2014-07-22 | International Business Machines Corporation | FinFETs and fin isolation structures |
JP6251604B2 (ja) * | 2013-03-11 | 2017-12-20 | ルネサスエレクトロニクス株式会社 | フィンfet構造を有する半導体装置及びその製造方法 |
KR102029794B1 (ko) | 2013-03-15 | 2019-10-08 | 삼성전자주식회사 | 반도체 장치 |
KR102069609B1 (ko) * | 2013-08-12 | 2020-01-23 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US8895381B1 (en) * | 2013-08-15 | 2014-11-25 | International Business Machines Corporation | Method of co-integration of strained-Si and relaxed Si or strained SiGe FETs on insulator with planar and non-planar architectures |
US9048303B1 (en) | 2014-01-30 | 2015-06-02 | Infineon Technologies Austria Ag | Group III-nitride-based enhancement mode transistor |
US9337279B2 (en) | 2014-03-03 | 2016-05-10 | Infineon Technologies Austria Ag | Group III-nitride-based enhancement mode transistor |
KR102190477B1 (ko) | 2014-04-25 | 2020-12-14 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9659827B2 (en) | 2014-07-21 | 2017-05-23 | Samsung Electronics Co., Ltd. | Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation |
US9165945B1 (en) * | 2014-09-18 | 2015-10-20 | Soitec | Method for fabricating semiconductor structures including transistor channels having different strain states, and related semiconductor structures |
US9362182B2 (en) * | 2014-11-06 | 2016-06-07 | International Business Machines Corporation | Forming strained fins of different material on a substrate |
US9543323B2 (en) * | 2015-01-13 | 2017-01-10 | International Business Machines Corporation | Strain release in PFET regions |
US9761699B2 (en) | 2015-01-28 | 2017-09-12 | International Business Machines Corporation | Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures |
US9613871B2 (en) | 2015-07-16 | 2017-04-04 | Samsung Electronics Co., Ltd. | Semiconductor device and fabricating method thereof |
US9680018B2 (en) * | 2015-09-21 | 2017-06-13 | International Business Machines Corporation | Method of forming high-germanium content silicon germanium alloy fins on insulator |
US9972683B2 (en) | 2015-10-27 | 2018-05-15 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
WO2017075165A1 (en) * | 2015-10-30 | 2017-05-04 | The University Of Florida Research Foundation, Inc. | Encapsulated nanosturctures and method for fabricating |
US9768178B2 (en) * | 2015-11-11 | 2017-09-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device, static random access memory cell and manufacturing method of semiconductor device |
US9899387B2 (en) * | 2015-11-16 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-gate device and method of fabrication thereof |
US9601569B1 (en) * | 2015-12-07 | 2017-03-21 | Samsung Electronics Co., Ltd. | Semiconductor device having a gate all around structure |
TWI739879B (zh) * | 2016-08-10 | 2021-09-21 | 日商東京威力科創股份有限公司 | 用於半導體裝置的延伸區域 |
US11171211B1 (en) | 2020-05-11 | 2021-11-09 | Samsung Electronics Co., Ltd. | Group IV and III-V p-type MOSFET with high hole mobility and method of manufacturing the same |
US20230170420A1 (en) * | 2021-11-29 | 2023-06-01 | Intel Corporation | Strained semiconductor on insulator (ssoi) based gate all around (gaa) transistor structures |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1873990A (zh) * | 2005-05-31 | 2006-12-06 | 株式会社东芝 | 半导体器件及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001160594A (ja) | 1999-09-20 | 2001-06-12 | Toshiba Corp | 半導体装置 |
JP3927165B2 (ja) | 2003-07-03 | 2007-06-06 | 株式会社東芝 | 半導体装置 |
US7538351B2 (en) * | 2005-03-23 | 2009-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming an SOI structure with improved carrier mobility and ESD protection |
-
2006
- 2006-12-08 JP JP2006332020A patent/JP4310399B2/ja active Active
-
2007
- 2007-12-05 US US11/950,716 patent/US8008751B2/en active Active
- 2007-12-07 CN CN200710198916A patent/CN100578797C/zh active Active
-
2011
- 2011-02-28 US US13/037,049 patent/US8174095B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1873990A (zh) * | 2005-05-31 | 2006-12-06 | 株式会社东芝 | 半导体器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2008147366A (ja) | 2008-06-26 |
US20080135886A1 (en) | 2008-06-12 |
US8174095B2 (en) | 2012-05-08 |
CN101202288A (zh) | 2008-06-18 |
US8008751B2 (en) | 2011-08-30 |
US20110147805A1 (en) | 2011-06-23 |
JP4310399B2 (ja) | 2009-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100578797C (zh) | 半导体器件及其制造方法 | |
US8778766B2 (en) | Field effect transistor, integrated circuit element, and method for manufacturing the same | |
US6709909B2 (en) | Semiconductor device and method of manufacturing the same | |
US7304336B2 (en) | FinFET structure and method to make the same | |
KR100961809B1 (ko) | 변형된 실리콘-온-절연체 구조물을 제조하는 방법 및 이에의해 형성된 변형된 실리콘-온-절연체 구조물 | |
US7767560B2 (en) | Three dimensional strained quantum wells and three dimensional strained surface channels by Ge confinement method | |
US9711413B2 (en) | High performance CMOS device design | |
US9293583B2 (en) | Finfet with oxidation-induced stress | |
US8169025B2 (en) | Strained CMOS device, circuit and method of fabrication | |
KR100756125B1 (ko) | 반도체 장치 및 그 제조 방법 | |
TWI463526B (zh) | 改良具應力矽之cmos元件的方法及以該方法製備而成的元件 | |
US20110165738A1 (en) | Field effect transistor and method for manufacturing the same | |
KR20080035659A (ko) | 스트레스형 mos 디바이스 제조방법 | |
KR20090110667A (ko) | 게르마늄 응축을 이용한 cmos 트랜지스터 및 그제조방법 | |
JP2007329295A (ja) | 半導体及びその製造方法 | |
US7268362B2 (en) | High performance transistors with SiGe strain | |
JP4301816B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP3600174B2 (ja) | 半導体装置の製造方法及び半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190919 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. Effective date of registration: 20190919 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
|
CP01 | Change in the name or title of a patent holder |