JP2003282880A - 表示装置 - Google Patents

表示装置

Info

Publication number
JP2003282880A
JP2003282880A JP2002080166A JP2002080166A JP2003282880A JP 2003282880 A JP2003282880 A JP 2003282880A JP 2002080166 A JP2002080166 A JP 2002080166A JP 2002080166 A JP2002080166 A JP 2002080166A JP 2003282880 A JP2003282880 A JP 2003282880A
Authority
JP
Japan
Prior art keywords
mos
resist
gate electrode
channel
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002080166A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003282880A5 (enExample
Inventor
Daisuke Sonoda
大介 園田
Toshiteru Kaneko
寿輝 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Hitachi Displays Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Displays Ltd filed Critical Hitachi Displays Ltd
Priority to JP2002080166A priority Critical patent/JP2003282880A/ja
Priority to CNB031211062A priority patent/CN1272858C/zh
Priority to TW092106314A priority patent/TWI230289B/zh
Priority to US10/392,862 priority patent/US7157751B2/en
Priority to KR1020030017955A priority patent/KR100767901B1/ko
Publication of JP2003282880A publication Critical patent/JP2003282880A/ja
Publication of JP2003282880A5 publication Critical patent/JP2003282880A5/ja
Priority to US11/214,794 priority patent/US7391063B2/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2002080166A 2002-03-22 2002-03-22 表示装置 Pending JP2003282880A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002080166A JP2003282880A (ja) 2002-03-22 2002-03-22 表示装置
CNB031211062A CN1272858C (zh) 2002-03-22 2003-03-21 显示装置
TW092106314A TWI230289B (en) 2002-03-22 2003-03-21 Display device
US10/392,862 US7157751B2 (en) 2002-03-22 2003-03-21 Display device
KR1020030017955A KR100767901B1 (ko) 2002-03-22 2003-03-22 표시 장치
US11/214,794 US7391063B2 (en) 2002-03-22 2005-08-31 Display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002080166A JP2003282880A (ja) 2002-03-22 2002-03-22 表示装置

Publications (2)

Publication Number Publication Date
JP2003282880A true JP2003282880A (ja) 2003-10-03
JP2003282880A5 JP2003282880A5 (enExample) 2005-02-03

Family

ID=28035693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002080166A Pending JP2003282880A (ja) 2002-03-22 2002-03-22 表示装置

Country Status (5)

Country Link
US (2) US7157751B2 (enExample)
JP (1) JP2003282880A (enExample)
KR (1) KR100767901B1 (enExample)
CN (1) CN1272858C (enExample)
TW (1) TWI230289B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7704810B2 (en) 2006-09-19 2010-04-27 Hitachi Displays, Ltd. Manufacturing method of display device
WO2012160800A1 (ja) * 2011-05-24 2012-11-29 シャープ株式会社 半導体装置の製造方法
WO2013080501A1 (ja) * 2011-11-30 2013-06-06 シャープ株式会社 半導体装置の製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282880A (ja) * 2002-03-22 2003-10-03 Hitachi Displays Ltd 表示装置
KR100519368B1 (ko) * 2002-03-29 2005-10-07 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
KR100532464B1 (ko) * 2003-08-28 2005-12-01 삼성전자주식회사 액티브를 이용한 반도체 셀의 전원선 레이아웃
KR100575233B1 (ko) * 2003-11-04 2006-05-02 엘지.필립스 엘시디 주식회사 액정표시장치 제조 방법
WO2005094134A1 (ja) * 2004-03-29 2005-10-06 Fuji Photo Film Co., Ltd. 有機エレクトロルミネッセンス素子及びその製造方法並びに表示装置
KR100667066B1 (ko) * 2004-08-11 2007-01-10 삼성에스디아이 주식회사 박막트랜지스터 제조 방법
KR101100426B1 (ko) * 2005-05-10 2011-12-30 삼성전자주식회사 단결정 실리콘층을 포함하는 반도체 소자, 이를 포함하는반도체 장치 및 평면표시장치와 반도체 소자의 제조 방법
US7244975B2 (en) * 2005-07-05 2007-07-17 United Microelectronics Corp. High-voltage device structure
KR101239889B1 (ko) 2005-08-13 2013-03-06 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR101267499B1 (ko) * 2005-08-18 2013-05-31 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터
CN100466234C (zh) * 2005-12-08 2009-03-04 中华映管股份有限公司 薄膜晶体管的制造方法
KR100770269B1 (ko) * 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
US7176074B1 (en) 2006-08-10 2007-02-13 Chunghwa Picture Tubes, Ltd. Manufacturing method of thin film transistor array substrate
CN104752426A (zh) * 2013-12-26 2015-07-01 昆山国显光电有限公司 共栅极立体式cmos器件、oled器件及其制造方法
CN103715094B (zh) 2013-12-27 2017-02-01 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置
CN104465405B (zh) * 2014-12-30 2017-09-22 京东方科技集团股份有限公司 薄膜晶体管的制作方法及阵列基板的制作方法
CN106711231A (zh) * 2017-01-13 2017-05-24 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示基板及其制备方法
CN109256397B (zh) * 2018-09-20 2021-09-21 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943564A (ja) 1982-09-03 1984-03-10 Citizen Watch Co Ltd 半導体集積回路
JPS6446979A (en) * 1987-08-14 1989-02-21 Oki Electric Ind Co Ltd Analogue switch and sample-and-hold circuit with analogue switch
JPH01296657A (ja) 1988-05-24 1989-11-30 Mitsubishi Electric Corp 半導体装置
US5616935A (en) 1994-02-08 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit having N-channel and P-channel transistors
JPH08213480A (ja) * 1994-10-31 1996-08-20 Nkk Corp 半導体装置及びその製造方法
JPH0964295A (ja) 1995-08-18 1997-03-07 Hitachi Ltd 半導体記憶装置
JPH1070197A (ja) * 1996-07-12 1998-03-10 Texas Instr Inc <Ti> スプリット・ゲート酸化物を備えた高集積度ｃｍｏｓ回路及びその作成法
JP3527034B2 (ja) * 1996-09-20 2004-05-17 株式会社半導体エネルギー研究所 半導体装置
US6277679B1 (en) 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
JP2000267136A (ja) 1999-03-18 2000-09-29 Toshiba Corp 液晶表示装置
JP3737914B2 (ja) * 1999-09-02 2006-01-25 松下電器産業株式会社 半導体装置及びその製造方法
US6469362B2 (en) * 2000-02-15 2002-10-22 Winbond Electronics Corp. High-gain pnp bipolar junction transistor in a CMOS device and method for forming the same
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2003282880A (ja) * 2002-03-22 2003-10-03 Hitachi Displays Ltd 表示装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7704810B2 (en) 2006-09-19 2010-04-27 Hitachi Displays, Ltd. Manufacturing method of display device
WO2012160800A1 (ja) * 2011-05-24 2012-11-29 シャープ株式会社 半導体装置の製造方法
US9105652B2 (en) 2011-05-24 2015-08-11 Sharp Kabushiki Kaisha Method of manufacturing semiconductor device
WO2013080501A1 (ja) * 2011-11-30 2013-06-06 シャープ株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
CN1272858C (zh) 2006-08-30
TWI230289B (en) 2005-04-01
CN1460979A (zh) 2003-12-10
US20060006392A1 (en) 2006-01-12
KR100767901B1 (ko) 2007-10-17
US7157751B2 (en) 2007-01-02
KR20030076451A (ko) 2003-09-26
TW200400380A (en) 2004-01-01
US20030178650A1 (en) 2003-09-25
US7391063B2 (en) 2008-06-24

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