CN1272858C - 显示装置 - Google Patents

显示装置 Download PDF

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Publication number
CN1272858C
CN1272858C CNB031211062A CN03121106A CN1272858C CN 1272858 C CN1272858 C CN 1272858C CN B031211062 A CNB031211062 A CN B031211062A CN 03121106 A CN03121106 A CN 03121106A CN 1272858 C CN1272858 C CN 1272858C
Authority
CN
China
Prior art keywords
mos
gate electrode
ditch
ditch part
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031211062A
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English (en)
Chinese (zh)
Other versions
CN1460979A (zh
Inventor
园田大介
金子寿辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Liquid Crystal Display Co Ltd
Japan Display Inc
Original Assignee
Hitachi Displays Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Displays Ltd filed Critical Hitachi Displays Ltd
Publication of CN1460979A publication Critical patent/CN1460979A/zh
Application granted granted Critical
Publication of CN1272858C publication Critical patent/CN1272858C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB031211062A 2002-03-22 2003-03-21 显示装置 Expired - Fee Related CN1272858C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP080166/2002 2002-03-22
JP2002080166A JP2003282880A (ja) 2002-03-22 2002-03-22 表示装置

Publications (2)

Publication Number Publication Date
CN1460979A CN1460979A (zh) 2003-12-10
CN1272858C true CN1272858C (zh) 2006-08-30

Family

ID=28035693

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031211062A Expired - Fee Related CN1272858C (zh) 2002-03-22 2003-03-21 显示装置

Country Status (5)

Country Link
US (2) US7157751B2 (enExample)
JP (1) JP2003282880A (enExample)
KR (1) KR100767901B1 (enExample)
CN (1) CN1272858C (enExample)
TW (1) TWI230289B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282880A (ja) * 2002-03-22 2003-10-03 Hitachi Displays Ltd 表示装置
KR100519368B1 (ko) * 2002-03-29 2005-10-07 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
KR100532464B1 (ko) * 2003-08-28 2005-12-01 삼성전자주식회사 액티브를 이용한 반도체 셀의 전원선 레이아웃
KR100575233B1 (ko) * 2003-11-04 2006-05-02 엘지.필립스 엘시디 주식회사 액정표시장치 제조 방법
JP4637831B2 (ja) * 2004-03-29 2011-02-23 富士フイルム株式会社 有機エレクトロルミネッセンス素子及びその製造方法並びに表示装置
KR100667066B1 (ko) * 2004-08-11 2007-01-10 삼성에스디아이 주식회사 박막트랜지스터 제조 방법
KR101100426B1 (ko) * 2005-05-10 2011-12-30 삼성전자주식회사 단결정 실리콘층을 포함하는 반도체 소자, 이를 포함하는반도체 장치 및 평면표시장치와 반도체 소자의 제조 방법
US7244975B2 (en) * 2005-07-05 2007-07-17 United Microelectronics Corp. High-voltage device structure
KR101239889B1 (ko) 2005-08-13 2013-03-06 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR101267499B1 (ko) * 2005-08-18 2013-05-31 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터
CN100466234C (zh) * 2005-12-08 2009-03-04 中华映管股份有限公司 薄膜晶体管的制造方法
KR100770269B1 (ko) * 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
US7176074B1 (en) 2006-08-10 2007-02-13 Chunghwa Picture Tubes, Ltd. Manufacturing method of thin film transistor array substrate
JP5005302B2 (ja) 2006-09-19 2012-08-22 株式会社ジャパンディスプレイイースト 表示装置の製造方法
US9105652B2 (en) 2011-05-24 2015-08-11 Sharp Kabushiki Kaisha Method of manufacturing semiconductor device
WO2013080501A1 (ja) * 2011-11-30 2013-06-06 シャープ株式会社 半導体装置の製造方法
CN104752426A (zh) * 2013-12-26 2015-07-01 昆山国显光电有限公司 共栅极立体式cmos器件、oled器件及其制造方法
CN103715094B (zh) * 2013-12-27 2017-02-01 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置
CN104465405B (zh) * 2014-12-30 2017-09-22 京东方科技集团股份有限公司 薄膜晶体管的制作方法及阵列基板的制作方法
CN106711231A (zh) * 2017-01-13 2017-05-24 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示基板及其制备方法
CN109256397B (zh) * 2018-09-20 2021-09-21 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943564A (ja) 1982-09-03 1984-03-10 Citizen Watch Co Ltd 半導体集積回路
JPS6446979A (en) * 1987-08-14 1989-02-21 Oki Electric Ind Co Ltd Analogue switch and sample-and-hold circuit with analogue switch
JPH01296657A (ja) 1988-05-24 1989-11-30 Mitsubishi Electric Corp 半導体装置
US5616935A (en) * 1994-02-08 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit having N-channel and P-channel transistors
JPH08213480A (ja) * 1994-10-31 1996-08-20 Nkk Corp 半導体装置及びその製造方法
JPH0964295A (ja) 1995-08-18 1997-03-07 Hitachi Ltd 半導体記憶装置
SG54531A1 (en) * 1996-07-12 1998-11-16 Texas Instruments Inc High density cmos circuit with split gate oxide
JP3527034B2 (ja) * 1996-09-20 2004-05-17 株式会社半導体エネルギー研究所 半導体装置
US6277679B1 (en) * 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
JP2000267136A (ja) 1999-03-18 2000-09-29 Toshiba Corp 液晶表示装置
JP3737914B2 (ja) * 1999-09-02 2006-01-25 松下電器産業株式会社 半導体装置及びその製造方法
US6469362B2 (en) * 2000-02-15 2002-10-22 Winbond Electronics Corp. High-gain pnp bipolar junction transistor in a CMOS device and method for forming the same
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2003282880A (ja) * 2002-03-22 2003-10-03 Hitachi Displays Ltd 表示装置

Also Published As

Publication number Publication date
TW200400380A (en) 2004-01-01
US20060006392A1 (en) 2006-01-12
US7157751B2 (en) 2007-01-02
CN1460979A (zh) 2003-12-10
TWI230289B (en) 2005-04-01
KR100767901B1 (ko) 2007-10-17
US7391063B2 (en) 2008-06-24
KR20030076451A (ko) 2003-09-26
US20030178650A1 (en) 2003-09-25
JP2003282880A (ja) 2003-10-03

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: PANASONIC LCD CO., LTD.

Free format text: FORMER OWNER: IPS ALPHA SUPPORT CO., LTD.

Owner name: IPS ALPHA SUPPORT CO., LTD.

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20110908

Address after: Chiba County, Japan

Co-patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Patentee after: Hitachi Displays, Ltd.

Address before: Chiba County, Japan

Co-patentee before: IPS pioneer support society

Patentee before: Hitachi Displays, Ltd.

Effective date of registration: 20110908

Address after: Chiba County, Japan

Co-patentee after: IPS Pioneer Support Society

Patentee after: Hitachi Displays, Ltd.

Address before: Chiba County, Japan

Patentee before: Hitachi Displays, Ltd.

C56 Change in the name or address of the patentee

Owner name: JAPAN DISPLAY, INC.

Free format text: FORMER NAME: APAN DISPLAY EAST, INC.

Owner name: APAN DISPLAY EAST, INC.

Free format text: FORMER NAME: HITACHI DISPLAY CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: Japan Display East Inc.

Patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Address before: Chiba County, Japan

Patentee before: Hitachi Displays, Ltd.

Patentee before: Panasonic Liquid Crystal Display Co.,Ltd.

CP03 Change of name, title or address

Address after: Tokyo port xixinqiao Japan three chome 7 No. 1

Patentee after: JAPAN DISPLAY Inc.

Patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Address before: Chiba County, Japan

Patentee before: Japan Display East Inc.

Patentee before: Panasonic Liquid Crystal Display Co.,Ltd.

EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20031210

Assignee: BOE TECHNOLOGY GROUP Co.,Ltd.

Assignor: JAPAN DISPLAY Inc.|Panasonic Liquid Crystal Display Co.,Ltd.

Contract record no.: 2013990000688

Denomination of invention: Image display

Granted publication date: 20060830

License type: Common License

Record date: 20131016

LICC Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060830

Termination date: 20190321