KR100767901B1 - 표시 장치 - Google Patents

표시 장치 Download PDF

Info

Publication number
KR100767901B1
KR100767901B1 KR1020030017955A KR20030017955A KR100767901B1 KR 100767901 B1 KR100767901 B1 KR 100767901B1 KR 1020030017955 A KR1020030017955 A KR 1020030017955A KR 20030017955 A KR20030017955 A KR 20030017955A KR 100767901 B1 KR100767901 B1 KR 100767901B1
Authority
KR
South Korea
Prior art keywords
gate electrode
mos
channel portion
width
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020030017955A
Other languages
English (en)
Korean (ko)
Other versions
KR20030076451A (ko
Inventor
소노다다이스께
가네꼬도시끼
Original Assignee
가부시키가이샤 히타치 디스프레이즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히타치 디스프레이즈 filed Critical 가부시키가이샤 히타치 디스프레이즈
Publication of KR20030076451A publication Critical patent/KR20030076451A/ko
Application granted granted Critical
Publication of KR100767901B1 publication Critical patent/KR100767901B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020030017955A 2002-03-22 2003-03-22 표시 장치 Expired - Fee Related KR100767901B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00080166 2002-03-22
JP2002080166A JP2003282880A (ja) 2002-03-22 2002-03-22 表示装置

Publications (2)

Publication Number Publication Date
KR20030076451A KR20030076451A (ko) 2003-09-26
KR100767901B1 true KR100767901B1 (ko) 2007-10-17

Family

ID=28035693

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030017955A Expired - Fee Related KR100767901B1 (ko) 2002-03-22 2003-03-22 표시 장치

Country Status (5)

Country Link
US (2) US7157751B2 (enExample)
JP (1) JP2003282880A (enExample)
KR (1) KR100767901B1 (enExample)
CN (1) CN1272858C (enExample)
TW (1) TWI230289B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282880A (ja) * 2002-03-22 2003-10-03 Hitachi Displays Ltd 表示装置
KR100519368B1 (ko) * 2002-03-29 2005-10-07 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
KR100532464B1 (ko) * 2003-08-28 2005-12-01 삼성전자주식회사 액티브를 이용한 반도체 셀의 전원선 레이아웃
KR100575233B1 (ko) * 2003-11-04 2006-05-02 엘지.필립스 엘시디 주식회사 액정표시장치 제조 방법
JP4637831B2 (ja) * 2004-03-29 2011-02-23 富士フイルム株式会社 有機エレクトロルミネッセンス素子及びその製造方法並びに表示装置
KR100667066B1 (ko) * 2004-08-11 2007-01-10 삼성에스디아이 주식회사 박막트랜지스터 제조 방법
KR101100426B1 (ko) * 2005-05-10 2011-12-30 삼성전자주식회사 단결정 실리콘층을 포함하는 반도체 소자, 이를 포함하는반도체 장치 및 평면표시장치와 반도체 소자의 제조 방법
US7244975B2 (en) * 2005-07-05 2007-07-17 United Microelectronics Corp. High-voltage device structure
KR101239889B1 (ko) 2005-08-13 2013-03-06 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR101267499B1 (ko) * 2005-08-18 2013-05-31 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터
CN100466234C (zh) * 2005-12-08 2009-03-04 中华映管股份有限公司 薄膜晶体管的制造方法
KR100770269B1 (ko) * 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
US7176074B1 (en) 2006-08-10 2007-02-13 Chunghwa Picture Tubes, Ltd. Manufacturing method of thin film transistor array substrate
JP5005302B2 (ja) 2006-09-19 2012-08-22 株式会社ジャパンディスプレイイースト 表示装置の製造方法
US9105652B2 (en) 2011-05-24 2015-08-11 Sharp Kabushiki Kaisha Method of manufacturing semiconductor device
WO2013080501A1 (ja) * 2011-11-30 2013-06-06 シャープ株式会社 半導体装置の製造方法
CN104752426A (zh) * 2013-12-26 2015-07-01 昆山国显光电有限公司 共栅极立体式cmos器件、oled器件及其制造方法
CN103715094B (zh) * 2013-12-27 2017-02-01 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置
CN104465405B (zh) * 2014-12-30 2017-09-22 京东方科技集团股份有限公司 薄膜晶体管的制作方法及阵列基板的制作方法
CN106711231A (zh) * 2017-01-13 2017-05-24 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示基板及其制备方法
CN109256397B (zh) * 2018-09-20 2021-09-21 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964295A (ja) * 1995-08-18 1997-03-07 Hitachi Ltd 半導体記憶装置
KR980012115A (ko) * 1996-07-12 1998-04-30 윌리엄 비. 켐플러 분리된 게이트 옥사이드를 가지는 고집적 cmos 회로 및 그 제조 방법
JP2000267136A (ja) 1999-03-18 2000-09-29 Toshiba Corp 液晶表示装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943564A (ja) 1982-09-03 1984-03-10 Citizen Watch Co Ltd 半導体集積回路
JPS6446979A (en) * 1987-08-14 1989-02-21 Oki Electric Ind Co Ltd Analogue switch and sample-and-hold circuit with analogue switch
JPH01296657A (ja) 1988-05-24 1989-11-30 Mitsubishi Electric Corp 半導体装置
US5616935A (en) * 1994-02-08 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit having N-channel and P-channel transistors
JPH08213480A (ja) * 1994-10-31 1996-08-20 Nkk Corp 半導体装置及びその製造方法
JP3527034B2 (ja) * 1996-09-20 2004-05-17 株式会社半導体エネルギー研究所 半導体装置
US6277679B1 (en) * 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
JP3737914B2 (ja) * 1999-09-02 2006-01-25 松下電器産業株式会社 半導体装置及びその製造方法
US6469362B2 (en) * 2000-02-15 2002-10-22 Winbond Electronics Corp. High-gain pnp bipolar junction transistor in a CMOS device and method for forming the same
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2003282880A (ja) * 2002-03-22 2003-10-03 Hitachi Displays Ltd 表示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964295A (ja) * 1995-08-18 1997-03-07 Hitachi Ltd 半導体記憶装置
KR980012115A (ko) * 1996-07-12 1998-04-30 윌리엄 비. 켐플러 분리된 게이트 옥사이드를 가지는 고집적 cmos 회로 및 그 제조 방법
JP2000267136A (ja) 1999-03-18 2000-09-29 Toshiba Corp 液晶表示装置

Also Published As

Publication number Publication date
TW200400380A (en) 2004-01-01
US20060006392A1 (en) 2006-01-12
US7157751B2 (en) 2007-01-02
CN1460979A (zh) 2003-12-10
TWI230289B (en) 2005-04-01
US7391063B2 (en) 2008-06-24
KR20030076451A (ko) 2003-09-26
US20030178650A1 (en) 2003-09-25
JP2003282880A (ja) 2003-10-03
CN1272858C (zh) 2006-08-30

Similar Documents

Publication Publication Date Title
KR100767901B1 (ko) 표시 장치
JP4798906B2 (ja) 液晶表示装置用多結晶シリコン薄膜トランジスター及びその製造方法
KR101177720B1 (ko) 액정표시장치와 그 제조방법
JP4302347B2 (ja) 薄膜トランジスタ基板及びその製造方法
JP5266645B2 (ja) 薄膜トランジスタと該薄膜トランジスタを用いた表示装置
KR101059024B1 (ko) 표시 장치
KR101221951B1 (ko) 액정표시장치용 어레이 기판 및 그 제조방법
KR101256708B1 (ko) 액정표시장치의 제조방법
KR20070037071A (ko) 액정표시장치와 그 제조방법
KR20040106794A (ko) 액정표시장치 및 이의 제조방법
KR20180010655A (ko) 박막트랜지스터를 이용한 평판표시장치 제조방법
JP5221082B2 (ja) Ｔｆｔ基板
KR101153297B1 (ko) 액정표시장치 및 그 제조방법
KR101343435B1 (ko) 어레이 기판의 제조방법 및 이에 의해 제조된 어레이 기판
KR101338107B1 (ko) 액정표시장치의 제조방법
KR20070038824A (ko) 액정표시장치와 그 제조방법
KR101226975B1 (ko) 구동회로 일체형 액정표시장치용 어레이 기판 및 그제조방법
JP2009210681A (ja) 表示装置及びその製造方法
KR101190072B1 (ko) 액정표시소자의 제조방법
KR101198217B1 (ko) 액정표시장치와 그 제조방법
KR100776753B1 (ko) 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법
KR20070033073A (ko) 액정표시장치의 제조방법
JP2008270613A (ja) 薄膜トランジスタアレイ基板、その製造方法、及び表示装置
KR20070035667A (ko) 액정표시장치와 그 제조방법
KR20070033070A (ko) 액정표시장치와 그 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

G170 Re-publication after modification of scope of protection [patent]
PG1701 Publication of correction

St.27 status event code: A-5-5-P10-P19-oth-PG1701

Patent document republication publication date: 20080416

Republication note text: Request for Correction Notice (Document Request)

Gazette number: 1007679010000

Gazette reference publication date: 20071017

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20120924

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20130924

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20141001

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150918

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20160921

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20170919

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20181011

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20181011