KR100776753B1 - 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법 - Google Patents
액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법 Download PDFInfo
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- KR100776753B1 KR100776753B1 KR1020010043705A KR20010043705A KR100776753B1 KR 100776753 B1 KR100776753 B1 KR 100776753B1 KR 1020010043705 A KR1020010043705 A KR 1020010043705A KR 20010043705 A KR20010043705 A KR 20010043705A KR 100776753 B1 KR100776753 B1 KR 100776753B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
Abstract
Description
Claims (13)
- 기판 상에 액티브 패턴을 형성하는 단계;상기 액티브 패턴 및 기판 상에 게이트 절연막을 형성하는 단계;상기 게이트 절연막 상에 게이트 도전막을 형성하는 단계;상기 게이트 도전막 상에 게이트 영역을 정의하는 포토레지스트 패턴을 형성하는 단계;상기 포토레지스트 패턴을 이용하여 상기 게이트 도전막을 패터닝하여 게이트 배선을 형성하고, 노출된 게이트 절연막을 식각하여 콘택홀이 형성되어질 영역의 상기 게이트 절연막을 제거하는 단계;상기 포토레지스트 패턴을 이용하여 이온주입을 실시함으로써 상기 액티브 패턴에 제1 및 제2 불순물 영역을 형성하는 단계;상기 포토레지스트 패턴을 제거하는 단계;상기 결과물의 전면에 층간 절연막을 형성하는 단계;상기 층간 절연막을 식각하여 상기 제1 불순물 영역을 노출시키는 제1 콘택홀 및 상기 제2 불순물 영역을 노출시키는 제2 콘택홀을 형성하는 단계; 및상기 층간 절연막 상에 상기 제1 콘택홀을 통해 상기 제1 불순물 영역과 연결되는 화소 전극 및 상기 제2 콘택홀을 통해 상기 제2 불순물 영역과 연결되는 데이터 배선을 형성하는 단계를 구비하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제1항에 있어서, 상기 액티브 패턴을 형성하는 단계 전에 상기 기판의 전면에 차단막을 형성하는 단계를 더 구비하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제1항에 있어서, 상기 게이트 배선을 형성하는 단계에서, 상기 게이트 배선으로부터 소정 간격을 두고 상기 게이트 배선과 수직한 방향으로 신장되는 데이터 라인을 동시에 형성하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제3항에 있어서, 상기 제1 및 제2 콘택홀을 형성하는 단계에서, 상기 데이터 라인을 노출시키는 제3 콘택홀을 동시에 형성하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제3항에 있어서, 상기 데이터 배선은 상기 제1 콘택홀과 제3 콘택홀을 통해 상기 데이터 라인과 제2 불순물 영역을 연결하도록 형성하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제1항에 있어서, 상기 콘택홀이 형성되어질 영역의 상기 게이트 절연막을 제거하는 단계는 상기 액티브 패턴을 구성하는 물질에 대해 15:1 이상의 식각 선택비 를 갖는 건식 식각 공정으로 수행하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제1항에 있어서, 상기 제1 및 제2 불순물 영역은 제1 불순물을 50keV 이하의 에너지로 이온주입하여 형성하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제1항에 있어서, 상기 제1 및 제2 불순물 영역을 형성하는 단계는 LDD 영역을 형성하기 위한 이온주입 단계를 더 포함하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제8항에 있어서, 상기 LDD 영역은 제2 불순물을 90keV 이하의 에너지로 이온주입하여 형성하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제1항에 있어서, 상기 층간 절연막을 형성하는 단계 전에, 500℃ 이하의 온도에서 열처리를 실시하여 상기 제1 및 제2 불순물 영역을 활성화시키는 단계를 더 구비하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제10항에 있어서, 상기 열처리는 10분 이상 실시하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제1항에 있어서, 상기 층간 절연막은 감광성 유기막으로 형성하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
- 제12항에 있어서, 상기 층간 절연막을 형성하는 단계 후, 상기 감광성 유기막을 경화시키기 위하여 200℃ 이상의 온도에서 제1 열처리를 실시하는 단계와, 상기 감광성 유기막과 후속 공정에서 증착되는 도전막과의 접착력을 높이기 위하여 300℃ 이하의 온도에서 제2 열처리를 실시하는 단계를 더 구비하는 것을 특징으로 하는 액정표시장치용 다결정실리콘 박막 트랜지스터의 제조방법.
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR950033617A (ko) * | 1994-05-31 | 1995-12-26 | 이헌조 | 액정표시장치의 제조방법 |
KR960018739A (ko) * | 1994-11-30 | 1996-06-17 | 엄길용 | 액정표시장치용 박막트랜지스터의 제조방법 |
KR980003733A (ko) * | 1996-06-11 | 1998-03-30 | 구자홍 | 액정표시장치의 제조방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR950033617A (ko) * | 1994-05-31 | 1995-12-26 | 이헌조 | 액정표시장치의 제조방법 |
KR960018739A (ko) * | 1994-11-30 | 1996-06-17 | 엄길용 | 액정표시장치용 박막트랜지스터의 제조방법 |
KR980003733A (ko) * | 1996-06-11 | 1998-03-30 | 구자홍 | 액정표시장치의 제조방법 |
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