TWI230289B - Display device - Google Patents
Display device Download PDFInfo
- Publication number
- TWI230289B TWI230289B TW092106314A TW92106314A TWI230289B TW I230289 B TWI230289 B TW I230289B TW 092106314 A TW092106314 A TW 092106314A TW 92106314 A TW92106314 A TW 92106314A TW I230289 B TWI230289 B TW I230289B
- Authority
- TW
- Taiwan
- Prior art keywords
- mos
- gate electrode
- display device
- electrode
- width
- Prior art date
Links
- 239000010409 thin film Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 241000272525 Anas platyrhynchos Species 0.000 claims 1
- CXTJXDDDEKNHHJ-UHFFFAOYSA-N helioside Natural products CC1OC(OC2C(Oc3cc(O)c4C(=O)C(=COc4c3)c5ccc(O)cc5)OC(CO)C(O)C2OC6OC(CO)C(O)C(O)C6O)C(O)C(O)C1O CXTJXDDDEKNHHJ-UHFFFAOYSA-N 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 44
- 238000004519 manufacturing process Methods 0.000 abstract description 23
- 230000008569 process Effects 0.000 abstract description 22
- 238000000206 photolithography Methods 0.000 abstract description 9
- 230000010354 integration Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 66
- 238000005530 etching Methods 0.000 description 17
- 238000002513 implantation Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004936 P-84 Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002080166A JP2003282880A (ja) | 2002-03-22 | 2002-03-22 | 表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200400380A TW200400380A (en) | 2004-01-01 |
| TWI230289B true TWI230289B (en) | 2005-04-01 |
Family
ID=28035693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092106314A TWI230289B (en) | 2002-03-22 | 2003-03-21 | Display device |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7157751B2 (enExample) |
| JP (1) | JP2003282880A (enExample) |
| KR (1) | KR100767901B1 (enExample) |
| CN (1) | CN1272858C (enExample) |
| TW (1) | TWI230289B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003282880A (ja) * | 2002-03-22 | 2003-10-03 | Hitachi Displays Ltd | 表示装置 |
| KR100519368B1 (ko) * | 2002-03-29 | 2005-10-07 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
| KR100532464B1 (ko) * | 2003-08-28 | 2005-12-01 | 삼성전자주식회사 | 액티브를 이용한 반도체 셀의 전원선 레이아웃 |
| KR100575233B1 (ko) * | 2003-11-04 | 2006-05-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 제조 방법 |
| JP4637831B2 (ja) * | 2004-03-29 | 2011-02-23 | 富士フイルム株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法並びに表示装置 |
| KR100667066B1 (ko) * | 2004-08-11 | 2007-01-10 | 삼성에스디아이 주식회사 | 박막트랜지스터 제조 방법 |
| KR101100426B1 (ko) * | 2005-05-10 | 2011-12-30 | 삼성전자주식회사 | 단결정 실리콘층을 포함하는 반도체 소자, 이를 포함하는반도체 장치 및 평면표시장치와 반도체 소자의 제조 방법 |
| US7244975B2 (en) * | 2005-07-05 | 2007-07-17 | United Microelectronics Corp. | High-voltage device structure |
| KR101239889B1 (ko) | 2005-08-13 | 2013-03-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
| KR101267499B1 (ko) * | 2005-08-18 | 2013-05-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터 |
| CN100466234C (zh) * | 2005-12-08 | 2009-03-04 | 中华映管股份有限公司 | 薄膜晶体管的制造方法 |
| KR100770269B1 (ko) * | 2006-05-18 | 2007-10-25 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조방법 |
| US7176074B1 (en) | 2006-08-10 | 2007-02-13 | Chunghwa Picture Tubes, Ltd. | Manufacturing method of thin film transistor array substrate |
| JP5005302B2 (ja) | 2006-09-19 | 2012-08-22 | 株式会社ジャパンディスプレイイースト | 表示装置の製造方法 |
| US9105652B2 (en) | 2011-05-24 | 2015-08-11 | Sharp Kabushiki Kaisha | Method of manufacturing semiconductor device |
| WO2013080501A1 (ja) * | 2011-11-30 | 2013-06-06 | シャープ株式会社 | 半導体装置の製造方法 |
| CN104752426A (zh) * | 2013-12-26 | 2015-07-01 | 昆山国显光电有限公司 | 共栅极立体式cmos器件、oled器件及其制造方法 |
| CN103715094B (zh) * | 2013-12-27 | 2017-02-01 | 京东方科技集团股份有限公司 | 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置 |
| CN104465405B (zh) * | 2014-12-30 | 2017-09-22 | 京东方科技集团股份有限公司 | 薄膜晶体管的制作方法及阵列基板的制作方法 |
| CN106711231A (zh) * | 2017-01-13 | 2017-05-24 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、显示基板及其制备方法 |
| CN109256397B (zh) * | 2018-09-20 | 2021-09-21 | 合肥鑫晟光电科技有限公司 | 显示基板及其制备方法、显示装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5943564A (ja) | 1982-09-03 | 1984-03-10 | Citizen Watch Co Ltd | 半導体集積回路 |
| JPS6446979A (en) * | 1987-08-14 | 1989-02-21 | Oki Electric Ind Co Ltd | Analogue switch and sample-and-hold circuit with analogue switch |
| JPH01296657A (ja) | 1988-05-24 | 1989-11-30 | Mitsubishi Electric Corp | 半導体装置 |
| US5616935A (en) * | 1994-02-08 | 1997-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit having N-channel and P-channel transistors |
| JPH08213480A (ja) * | 1994-10-31 | 1996-08-20 | Nkk Corp | 半導体装置及びその製造方法 |
| JPH0964295A (ja) | 1995-08-18 | 1997-03-07 | Hitachi Ltd | 半導体記憶装置 |
| SG54531A1 (en) * | 1996-07-12 | 1998-11-16 | Texas Instruments Inc | High density cmos circuit with split gate oxide |
| JP3527034B2 (ja) * | 1996-09-20 | 2004-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US6277679B1 (en) * | 1998-11-25 | 2001-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing thin film transistor |
| JP2000267136A (ja) | 1999-03-18 | 2000-09-29 | Toshiba Corp | 液晶表示装置 |
| JP3737914B2 (ja) * | 1999-09-02 | 2006-01-25 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
| US6469362B2 (en) * | 2000-02-15 | 2002-10-22 | Winbond Electronics Corp. | High-gain pnp bipolar junction transistor in a CMOS device and method for forming the same |
| JP3746669B2 (ja) * | 2000-10-17 | 2006-02-15 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP2003282880A (ja) * | 2002-03-22 | 2003-10-03 | Hitachi Displays Ltd | 表示装置 |
-
2002
- 2002-03-22 JP JP2002080166A patent/JP2003282880A/ja active Pending
-
2003
- 2003-03-21 CN CNB031211062A patent/CN1272858C/zh not_active Expired - Fee Related
- 2003-03-21 TW TW092106314A patent/TWI230289B/zh not_active IP Right Cessation
- 2003-03-21 US US10/392,862 patent/US7157751B2/en not_active Expired - Lifetime
- 2003-03-22 KR KR1020030017955A patent/KR100767901B1/ko not_active Expired - Fee Related
-
2005
- 2005-08-31 US US11/214,794 patent/US7391063B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW200400380A (en) | 2004-01-01 |
| US20060006392A1 (en) | 2006-01-12 |
| US7157751B2 (en) | 2007-01-02 |
| CN1460979A (zh) | 2003-12-10 |
| KR100767901B1 (ko) | 2007-10-17 |
| US7391063B2 (en) | 2008-06-24 |
| KR20030076451A (ko) | 2003-09-26 |
| US20030178650A1 (en) | 2003-09-25 |
| JP2003282880A (ja) | 2003-10-03 |
| CN1272858C (zh) | 2006-08-30 |
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