CN101740524B - 薄膜晶体管阵列基板的制造方法 - Google Patents
薄膜晶体管阵列基板的制造方法 Download PDFInfo
- Publication number
- CN101740524B CN101740524B CN 200810180071 CN200810180071A CN101740524B CN 101740524 B CN101740524 B CN 101740524B CN 200810180071 CN200810180071 CN 200810180071 CN 200810180071 A CN200810180071 A CN 200810180071A CN 101740524 B CN101740524 B CN 101740524B
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- thickness
- layer
- patterned semiconductor
- photoresist layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200810180071 CN101740524B (zh) | 2008-11-21 | 2008-11-21 | 薄膜晶体管阵列基板的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200810180071 CN101740524B (zh) | 2008-11-21 | 2008-11-21 | 薄膜晶体管阵列基板的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101740524A CN101740524A (zh) | 2010-06-16 |
CN101740524B true CN101740524B (zh) | 2013-10-30 |
Family
ID=42463747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200810180071 Active CN101740524B (zh) | 2008-11-21 | 2008-11-21 | 薄膜晶体管阵列基板的制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101740524B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI460864B (zh) * | 2011-11-11 | 2014-11-11 | Au Optronics Corp | 薄膜電晶體及其製造方法 |
CN103700706B (zh) | 2013-12-16 | 2015-02-18 | 京东方科技集团股份有限公司 | 薄膜晶体管制备方法和阵列基板制备方法 |
TW201622158A (zh) * | 2014-12-10 | 2016-06-16 | 中華映管股份有限公司 | 薄膜電晶體以及其製作方法 |
CN105097699B (zh) * | 2015-08-04 | 2018-02-13 | 武汉华星光电技术有限公司 | 一种显示面板制作方法 |
CN107910376B (zh) * | 2017-11-10 | 2019-11-05 | 深圳市华星光电技术有限公司 | 垂直结构薄膜晶体管的制造方法及垂直结构薄膜晶体管 |
WO2020154981A1 (zh) * | 2019-01-30 | 2020-08-06 | 深圳市柔宇科技有限公司 | 阵列基板及其制造方法、显示面板 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1916740A (zh) * | 2005-08-15 | 2007-02-21 | 广辉电子股份有限公司 | 薄膜晶体管与画素结构的制造方法 |
-
2008
- 2008-11-21 CN CN 200810180071 patent/CN101740524B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1916740A (zh) * | 2005-08-15 | 2007-02-21 | 广辉电子股份有限公司 | 薄膜晶体管与画素结构的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101740524A (zh) | 2010-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108538860B (zh) | 顶栅型非晶硅tft基板的制作方法 | |
TWI227565B (en) | Low temperature poly-Si thin film transistor and method of manufacturing the same | |
CN101540342B (zh) | 薄膜晶体管及显示装置 | |
CN105489552B (zh) | Ltps阵列基板的制作方法 | |
CN104022126B (zh) | 一种阵列基板、其制作方法及显示装置 | |
CN103123910B (zh) | 阵列基板及其制造方法、显示装置 | |
US7985636B2 (en) | Method for fabricating low temperature poly-silicon thin film transistor substrate | |
KR101991834B1 (ko) | 박막 트랜지스터, 디스플레이 기판 및 이를 가지는 디스플레이 패널, 및 그 제조 방법 | |
WO2017128565A1 (zh) | 低温多晶硅阵列基板的制作方法 | |
CN101740524B (zh) | 薄膜晶体管阵列基板的制造方法 | |
US7309625B2 (en) | Method for fabricating metal oxide semiconductor with lightly doped drain | |
CN110634804A (zh) | 一种阵列基板及其制备方法、触控显示面板 | |
CN105870135A (zh) | 阵列基板及其制作方法、显示面板、显示装置 | |
CN106024813A (zh) | 一种低温多晶硅tft阵列基板的制作方法及相应装置 | |
CN105679705B (zh) | 阵列基板的制作方法 | |
CN101236904A (zh) | 具有轻掺杂漏极区的多晶硅薄膜晶体管的制造方法 | |
CN100583417C (zh) | 互补式金属氧化物半导体薄膜晶体管的制造方法 | |
US7704890B2 (en) | Method for fabricating thin film transistor and pixel structure | |
TWI440139B (zh) | 薄膜電晶體之製造方法及具有該薄膜電晶體陣列基板之製造方法 | |
TW200409364A (en) | Structure of thin film transistor array and driving circuits | |
CN109786324B (zh) | 一种低温多晶硅基板及其制作方法、阵列基板 | |
US6713328B2 (en) | Manufacturing method of thin film transistor panel | |
US6731352B2 (en) | Method for fabricating liquid crystal display | |
CN111668236A (zh) | 阵列基板及其制备方法 | |
JP2014033136A (ja) | 表示装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: QIMEI ELECTRONIC CO LTD Free format text: FORMER OWNER: TONGBAO OPTOELECTRONICS CO., LTD. Effective date: 20130906 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Hsinchu Science Park, Taiwan, China Applicant after: INNOLUX DISPLAY CORP. Address before: Miaoli County, Taiwan, China Applicant before: CHI MEI OPTOELECTRONICS CORP. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: QIMEI ELECTRONIC CO LTD TO: INNOLUX DISPLAY CORPORATION |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20130906 Address after: Miaoli County, Taiwan, China Applicant after: CHI MEI OPTOELECTRONICS CORP. Address before: Hsinchu science industry zone, Taiwan, China Applicant before: TOPPOLY OPTOELECTRONICS Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |