JP2003282880A5 - - Google Patents

Download PDF

Info

Publication number
JP2003282880A5
JP2003282880A5 JP2002080166A JP2002080166A JP2003282880A5 JP 2003282880 A5 JP2003282880 A5 JP 2003282880A5 JP 2002080166 A JP2002080166 A JP 2002080166A JP 2002080166 A JP2002080166 A JP 2002080166A JP 2003282880 A5 JP2003282880 A5 JP 2003282880A5
Authority
JP
Japan
Prior art keywords
display device
channel portion
gate electrode
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002080166A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003282880A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002080166A priority Critical patent/JP2003282880A/ja
Priority claimed from JP2002080166A external-priority patent/JP2003282880A/ja
Priority to CNB031211062A priority patent/CN1272858C/zh
Priority to US10/392,862 priority patent/US7157751B2/en
Priority to TW092106314A priority patent/TWI230289B/zh
Priority to KR1020030017955A priority patent/KR100767901B1/ko
Publication of JP2003282880A publication Critical patent/JP2003282880A/ja
Publication of JP2003282880A5 publication Critical patent/JP2003282880A5/ja
Priority to US11/214,794 priority patent/US7391063B2/en
Pending legal-status Critical Current

Links

JP2002080166A 2002-03-22 2002-03-22 表示装置 Pending JP2003282880A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002080166A JP2003282880A (ja) 2002-03-22 2002-03-22 表示装置
CNB031211062A CN1272858C (zh) 2002-03-22 2003-03-21 显示装置
US10/392,862 US7157751B2 (en) 2002-03-22 2003-03-21 Display device
TW092106314A TWI230289B (en) 2002-03-22 2003-03-21 Display device
KR1020030017955A KR100767901B1 (ko) 2002-03-22 2003-03-22 표시 장치
US11/214,794 US7391063B2 (en) 2002-03-22 2005-08-31 Display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002080166A JP2003282880A (ja) 2002-03-22 2002-03-22 表示装置

Publications (2)

Publication Number Publication Date
JP2003282880A JP2003282880A (ja) 2003-10-03
JP2003282880A5 true JP2003282880A5 (enExample) 2005-02-03

Family

ID=28035693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002080166A Pending JP2003282880A (ja) 2002-03-22 2002-03-22 表示装置

Country Status (5)

Country Link
US (2) US7157751B2 (enExample)
JP (1) JP2003282880A (enExample)
KR (1) KR100767901B1 (enExample)
CN (1) CN1272858C (enExample)
TW (1) TWI230289B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282880A (ja) * 2002-03-22 2003-10-03 Hitachi Displays Ltd 表示装置
KR100519368B1 (ko) * 2002-03-29 2005-10-07 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
KR100532464B1 (ko) * 2003-08-28 2005-12-01 삼성전자주식회사 액티브를 이용한 반도체 셀의 전원선 레이아웃
KR100575233B1 (ko) * 2003-11-04 2006-05-02 엘지.필립스 엘시디 주식회사 액정표시장치 제조 방법
JP4637831B2 (ja) * 2004-03-29 2011-02-23 富士フイルム株式会社 有機エレクトロルミネッセンス素子及びその製造方法並びに表示装置
KR100667066B1 (ko) * 2004-08-11 2007-01-10 삼성에스디아이 주식회사 박막트랜지스터 제조 방법
KR101100426B1 (ko) * 2005-05-10 2011-12-30 삼성전자주식회사 단결정 실리콘층을 포함하는 반도체 소자, 이를 포함하는반도체 장치 및 평면표시장치와 반도체 소자의 제조 방법
US7244975B2 (en) * 2005-07-05 2007-07-17 United Microelectronics Corp. High-voltage device structure
KR101239889B1 (ko) 2005-08-13 2013-03-06 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR101267499B1 (ko) * 2005-08-18 2013-05-31 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터
CN100466234C (zh) * 2005-12-08 2009-03-04 中华映管股份有限公司 薄膜晶体管的制造方法
KR100770269B1 (ko) * 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
US7176074B1 (en) 2006-08-10 2007-02-13 Chunghwa Picture Tubes, Ltd. Manufacturing method of thin film transistor array substrate
JP5005302B2 (ja) 2006-09-19 2012-08-22 株式会社ジャパンディスプレイイースト 表示装置の製造方法
US9105652B2 (en) 2011-05-24 2015-08-11 Sharp Kabushiki Kaisha Method of manufacturing semiconductor device
WO2013080501A1 (ja) * 2011-11-30 2013-06-06 シャープ株式会社 半導体装置の製造方法
CN104752426A (zh) * 2013-12-26 2015-07-01 昆山国显光电有限公司 共栅极立体式cmos器件、oled器件及其制造方法
CN103715094B (zh) * 2013-12-27 2017-02-01 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置
CN104465405B (zh) * 2014-12-30 2017-09-22 京东方科技集团股份有限公司 薄膜晶体管的制作方法及阵列基板的制作方法
CN106711231A (zh) * 2017-01-13 2017-05-24 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示基板及其制备方法
CN109256397B (zh) * 2018-09-20 2021-09-21 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943564A (ja) 1982-09-03 1984-03-10 Citizen Watch Co Ltd 半導体集積回路
JPS6446979A (en) * 1987-08-14 1989-02-21 Oki Electric Ind Co Ltd Analogue switch and sample-and-hold circuit with analogue switch
JPH01296657A (ja) 1988-05-24 1989-11-30 Mitsubishi Electric Corp 半導体装置
US5616935A (en) * 1994-02-08 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit having N-channel and P-channel transistors
JPH08213480A (ja) * 1994-10-31 1996-08-20 Nkk Corp 半導体装置及びその製造方法
JPH0964295A (ja) 1995-08-18 1997-03-07 Hitachi Ltd 半導体記憶装置
SG54531A1 (en) * 1996-07-12 1998-11-16 Texas Instruments Inc High density cmos circuit with split gate oxide
JP3527034B2 (ja) * 1996-09-20 2004-05-17 株式会社半導体エネルギー研究所 半導体装置
US6277679B1 (en) * 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
JP2000267136A (ja) 1999-03-18 2000-09-29 Toshiba Corp 液晶表示装置
JP3737914B2 (ja) * 1999-09-02 2006-01-25 松下電器産業株式会社 半導体装置及びその製造方法
US6469362B2 (en) * 2000-02-15 2002-10-22 Winbond Electronics Corp. High-gain pnp bipolar junction transistor in a CMOS device and method for forming the same
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2003282880A (ja) * 2002-03-22 2003-10-03 Hitachi Displays Ltd 表示装置

Similar Documents

Publication Publication Date Title
JP2003282880A5 (enExample)
SG138468A1 (en) A method of manufacturing a semiconductor device
EP1538674A3 (en) Semiconductor device
JP2008508717A5 (enExample)
TW200715562A (en) Thin film transistor substrate and fabrication thereof
WO2007019023A3 (en) Fin-type field effect transistor
TW200638545A (en) MOS transistor including multi-work function metal nitride gate electrode, CMOS integrated circuit device including same, and related methods of manufacture
TW200507020A (en) Multiple-gate transistors formed on bulk substrates
TW200633212A (en) Semiconductor device including field-effect transistor
EP0871227A3 (en) Thin film transistor, manufacturing method therefor and liquid crystal display unit using the same
JP2000208780A5 (enExample)
JP2009071284A5 (enExample)
DE602004015793D1 (de) Verfahren zur herstellung von paaren paralleler finfets
WO2002063697A1 (en) Semiconductor device and its manufacturing method
TWI285290B (en) Liquid crystal display device
IL156116A0 (en) Semiconductor device fabricated on surface of silicon having <110> direction of crystal plane and its production method
JP2003298059A5 (enExample)
TW200503268A (en) High voltage metal-oxide semiconductor device
EP1598860A3 (en) TFT, method of manufacturing the TFT, flat panel display having the TFT, and method of manufacturing the flat panel display
DE60029907D1 (de) Herstellungsverfahren für selbstjustierten Polysilizium-Dünnfilmtransistor (TFT) mit obenliegendem Gate
JP2000223714A5 (enExample)
JP2005513774A5 (enExample)
DE602006006088D1 (de) Brid-kristallorientierung
JP2001274402A5 (enExample)
EP1508921A3 (en) Gate shorted to body thin film transistor, manufacturing method thereof and display including the same