JP2001274402A5 - - Google Patents

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Publication number
JP2001274402A5
JP2001274402A5 JP2000085422A JP2000085422A JP2001274402A5 JP 2001274402 A5 JP2001274402 A5 JP 2001274402A5 JP 2000085422 A JP2000085422 A JP 2000085422A JP 2000085422 A JP2000085422 A JP 2000085422A JP 2001274402 A5 JP2001274402 A5 JP 2001274402A5
Authority
JP
Japan
Prior art keywords
source
gate
power
resistor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000085422A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001274402A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000085422A priority Critical patent/JP2001274402A/ja
Priority claimed from JP2000085422A external-priority patent/JP2001274402A/ja
Priority to TW090105993A priority patent/TW478027B/zh
Priority to KR1020010013614A priority patent/KR100362218B1/ko
Priority to US09/811,452 priority patent/US6507088B2/en
Priority to CNB011118717A priority patent/CN1162910C/zh
Priority to DE60133851T priority patent/DE60133851D1/de
Priority to EP01106461A priority patent/EP1137068B1/en
Publication of JP2001274402A publication Critical patent/JP2001274402A/ja
Publication of JP2001274402A5 publication Critical patent/JP2001274402A5/ja
Pending legal-status Critical Current

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JP2000085422A 2000-03-24 2000-03-24 パワー半導体装置 Pending JP2001274402A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2000085422A JP2001274402A (ja) 2000-03-24 2000-03-24 パワー半導体装置
TW090105993A TW478027B (en) 2000-03-24 2001-03-14 Power semiconductor device having a protection circuit
KR1020010013614A KR100362218B1 (ko) 2000-03-24 2001-03-16 전력 반도체장치
US09/811,452 US6507088B2 (en) 2000-03-24 2001-03-20 Power semiconductor device including voltage drive type power MOS transistor
CNB011118717A CN1162910C (zh) 2000-03-24 2001-03-22 电力半导体装置
DE60133851T DE60133851D1 (de) 2000-03-24 2001-03-23 Leistungshalbleiterbauelement mit Schutzschaltkreis
EP01106461A EP1137068B1 (en) 2000-03-24 2001-03-23 Power semiconductor device having a protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000085422A JP2001274402A (ja) 2000-03-24 2000-03-24 パワー半導体装置

Publications (2)

Publication Number Publication Date
JP2001274402A JP2001274402A (ja) 2001-10-05
JP2001274402A5 true JP2001274402A5 (enExample) 2005-07-07

Family

ID=18601762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000085422A Pending JP2001274402A (ja) 2000-03-24 2000-03-24 パワー半導体装置

Country Status (7)

Country Link
US (1) US6507088B2 (enExample)
EP (1) EP1137068B1 (enExample)
JP (1) JP2001274402A (enExample)
KR (1) KR100362218B1 (enExample)
CN (1) CN1162910C (enExample)
DE (1) DE60133851D1 (enExample)
TW (1) TW478027B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4946123B2 (ja) * 2006-03-27 2012-06-06 セイコーエプソン株式会社 半導体装置、電気光学装置および電子機器
US7511357B2 (en) * 2007-04-20 2009-03-31 Force-Mos Technology Corporation Trenched MOSFETs with improved gate-drain (GD) clamp diodes
WO2009128942A1 (en) * 2008-04-16 2009-10-22 Bourns, Inc. Current limiting surge protection device
US8068322B2 (en) * 2008-07-31 2011-11-29 Honeywell International Inc. Electronic circuit breaker apparatus and systems
CN101814527A (zh) * 2010-04-22 2010-08-25 复旦大学 一种使用光电子注入进行电导调制的功率器件与方法
CN102158228A (zh) * 2011-04-19 2011-08-17 复旦大学 极低电压毫米波注入锁定二分频器
JP5959162B2 (ja) * 2011-06-09 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2013065759A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置
JP6056299B2 (ja) * 2012-09-13 2017-01-11 富士電機株式会社 半導体装置とワイヤオープン不良の検出方法
US8816725B2 (en) * 2012-12-31 2014-08-26 Nxp B.V. High-voltage electrical switch by series connected semiconductor switches
JP2014216573A (ja) 2013-04-26 2014-11-17 株式会社東芝 半導体装置
JP6218462B2 (ja) * 2013-07-04 2017-10-25 三菱電機株式会社 ワイドギャップ半導体装置
US10468485B2 (en) * 2017-05-26 2019-11-05 Allegro Microsystems, Llc Metal-oxide semiconductor (MOS) device structure based on a poly-filled trench isolation region
JP7295047B2 (ja) * 2020-01-22 2023-06-20 株式会社東芝 半導体装置
CN112383293B (zh) * 2020-11-30 2024-07-19 上海维安半导体有限公司 一种智能低边功率开关的控制电路及芯片

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
DE1764234A1 (de) * 1968-04-27 1971-07-01 Bosch Gmbh Robert Monolithische Halbleiteranordnung mit integrierten Leistungstransistoren,insbesondere als Spannungsregler fuer Fahrzeuglichtmaschinen
US4404477A (en) * 1978-02-22 1983-09-13 Supertex, Inc. Detection circuit and structure therefor
EP0090280A3 (en) * 1982-03-25 1986-03-19 Nissan Motor Co., Ltd. Semiconductor integrated circuit device and method of making the same
JPH0666472B2 (ja) * 1987-06-22 1994-08-24 日産自動車株式会社 過電流保護機能を備えたｍｏｓｆｅｔ
JPH0749805Y2 (ja) * 1988-06-30 1995-11-13 関西日本電気株式会社 半導体装置
IT1226557B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver"
US5172290A (en) 1988-08-10 1992-12-15 Siemens Aktiengesellschaft Gate-source protective circuit for a power mosfet
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
DE4120394A1 (de) * 1991-06-20 1992-12-24 Bosch Gmbh Robert Monolithisch integrierte schaltungsanordnung
JP2777307B2 (ja) * 1992-04-28 1998-07-16 株式会社東芝 短絡保護回路
JP3161092B2 (ja) * 1992-11-05 2001-04-25 富士電機株式会社 デュアルゲートｍｏｓサイリスタ
DE69420327T2 (de) * 1993-06-22 2000-03-30 Koninklijke Philips Electronics N.V., Eindhoven Halbleiter-Leistungsschaltung
JPH07183781A (ja) * 1993-12-22 1995-07-21 Fuji Electric Co Ltd 半導体装置とその駆動装置
JP3193827B2 (ja) * 1994-04-28 2001-07-30 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置
GB9423076D0 (en) 1994-10-12 1995-01-04 Philips Electronics Uk Ltd A protected switch
JPH0918001A (ja) 1995-06-26 1997-01-17 Ricoh Co Ltd 縦型パワーｍｏｓｆｅｔとその製造方法
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路
EP0766395A3 (de) * 1995-09-27 1999-04-21 Siemens Aktiengesellschaft Leistungstransistor mit Kurzschlussschutz
US5726594A (en) * 1995-10-02 1998-03-10 Siliconix Incorporated Switching device including power MOSFET with internal power supply circuit
JP3036423B2 (ja) * 1996-02-06 2000-04-24 日本電気株式会社 半導体装置
US6127746A (en) * 1996-10-21 2000-10-03 International Rectifier Corp. Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor
JP4156717B2 (ja) * 1998-01-13 2008-09-24 三菱電機株式会社 半導体装置
JP2982785B2 (ja) * 1998-04-03 1999-11-29 富士電機株式会社 デプレッション型ｍｏｓ半導体素子およびｍｏｓパワーｉｃ

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