KR100362218B1 - 전력 반도체장치 - Google Patents

전력 반도체장치 Download PDF

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Publication number
KR100362218B1
KR100362218B1 KR1020010013614A KR20010013614A KR100362218B1 KR 100362218 B1 KR100362218 B1 KR 100362218B1 KR 1020010013614 A KR1020010013614 A KR 1020010013614A KR 20010013614 A KR20010013614 A KR 20010013614A KR 100362218 B1 KR100362218 B1 KR 100362218B1
Authority
KR
South Korea
Prior art keywords
gate
source
resistor
power
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020010013614A
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English (en)
Korean (ko)
Other versions
KR20010093047A (ko
Inventor
요네다다츠오
Original Assignee
가부시끼가이샤 도시바
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Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20010093047A publication Critical patent/KR20010093047A/ko
Application granted granted Critical
Publication of KR100362218B1 publication Critical patent/KR100362218B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020010013614A 2000-03-24 2001-03-16 전력 반도체장치 Expired - Fee Related KR100362218B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000085422A JP2001274402A (ja) 2000-03-24 2000-03-24 パワー半導体装置
JP2000-85422 2000-03-24

Publications (2)

Publication Number Publication Date
KR20010093047A KR20010093047A (ko) 2001-10-27
KR100362218B1 true KR100362218B1 (ko) 2002-11-23

Family

ID=18601762

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010013614A Expired - Fee Related KR100362218B1 (ko) 2000-03-24 2001-03-16 전력 반도체장치

Country Status (7)

Country Link
US (1) US6507088B2 (enExample)
EP (1) EP1137068B1 (enExample)
JP (1) JP2001274402A (enExample)
KR (1) KR100362218B1 (enExample)
CN (1) CN1162910C (enExample)
DE (1) DE60133851D1 (enExample)
TW (1) TW478027B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150005443A (ko) * 2013-07-04 2015-01-14 미쓰비시덴키 가부시키가이샤 와이드 갭 반도체장치

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4946123B2 (ja) * 2006-03-27 2012-06-06 セイコーエプソン株式会社 半導体装置、電気光学装置および電子機器
US7511357B2 (en) * 2007-04-20 2009-03-31 Force-Mos Technology Corporation Trenched MOSFETs with improved gate-drain (GD) clamp diodes
WO2009128942A1 (en) * 2008-04-16 2009-10-22 Bourns, Inc. Current limiting surge protection device
US8068322B2 (en) * 2008-07-31 2011-11-29 Honeywell International Inc. Electronic circuit breaker apparatus and systems
CN101814527A (zh) * 2010-04-22 2010-08-25 复旦大学 一种使用光电子注入进行电导调制的功率器件与方法
CN102158228A (zh) * 2011-04-19 2011-08-17 复旦大学 极低电压毫米波注入锁定二分频器
JP5959162B2 (ja) * 2011-06-09 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2013065759A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置
JP6056299B2 (ja) * 2012-09-13 2017-01-11 富士電機株式会社 半導体装置とワイヤオープン不良の検出方法
US8816725B2 (en) * 2012-12-31 2014-08-26 Nxp B.V. High-voltage electrical switch by series connected semiconductor switches
JP2014216573A (ja) 2013-04-26 2014-11-17 株式会社東芝 半導体装置
US10468485B2 (en) 2017-05-26 2019-11-05 Allegro Microsystems, Llc Metal-oxide semiconductor (MOS) device structure based on a poly-filled trench isolation region
JP7295047B2 (ja) * 2020-01-22 2023-06-20 株式会社東芝 半導体装置
CN112383293B (zh) * 2020-11-30 2024-07-19 上海维安半导体有限公司 一种智能低边功率开关的控制电路及芯片

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JPH06104444A (ja) * 1990-11-06 1994-04-15 Harris Corp アクティブクランプを備えたパワーｍｏｓｆｅｔ回路
JPH07297358A (ja) * 1994-04-28 1995-11-10 Mitsubishi Electric Corp 半導体パワーモジュールおよび電力変換装置
US5506539A (en) * 1993-06-22 1996-04-09 U.S. Philips Corporation IGFET power semiconductor circuit with GAE control and fault detection circuits
KR970063900A (ko) * 1996-02-06 1997-09-12 가네꼬 히사시 기생 트랜지스터가 포함된 전력 mos 트랜지스터를 갖는 반도체 장치
JPH10173500A (ja) * 1996-10-21 1998-06-26 Internatl Rectifier Corp Ｍｏｓゲートパワートランジスタのｄｉ／ｄｔおよびｄｖ／ｄｔの切替制御方法
US6087862A (en) * 1995-10-02 2000-07-11 Siliconix Incorporated Power MOSFET including internal power supply circuitry

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DE1764234A1 (de) * 1968-04-27 1971-07-01 Bosch Gmbh Robert Monolithische Halbleiteranordnung mit integrierten Leistungstransistoren,insbesondere als Spannungsregler fuer Fahrzeuglichtmaschinen
US4404477A (en) * 1978-02-22 1983-09-13 Supertex, Inc. Detection circuit and structure therefor
EP0090280A3 (en) * 1982-03-25 1986-03-19 Nissan Motor Co., Ltd. Semiconductor integrated circuit device and method of making the same
JPH0666472B2 (ja) * 1987-06-22 1994-08-24 日産自動車株式会社 過電流保護機能を備えたｍｏｓｆｅｔ
JPH0749805Y2 (ja) * 1988-06-30 1995-11-13 関西日本電気株式会社 半導体装置
IT1226557B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver"
US5172290A (en) 1988-08-10 1992-12-15 Siemens Aktiengesellschaft Gate-source protective circuit for a power mosfet
DE4120394A1 (de) * 1991-06-20 1992-12-24 Bosch Gmbh Robert Monolithisch integrierte schaltungsanordnung
JP2777307B2 (ja) * 1992-04-28 1998-07-16 株式会社東芝 短絡保護回路
JP3161092B2 (ja) * 1992-11-05 2001-04-25 富士電機株式会社 デュアルゲートｍｏｓサイリスタ
JPH07183781A (ja) * 1993-12-22 1995-07-21 Fuji Electric Co Ltd 半導体装置とその駆動装置
GB9423076D0 (en) 1994-10-12 1995-01-04 Philips Electronics Uk Ltd A protected switch
JPH0918001A (ja) 1995-06-26 1997-01-17 Ricoh Co Ltd 縦型パワーｍｏｓｆｅｔとその製造方法
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路
EP0766395A3 (de) * 1995-09-27 1999-04-21 Siemens Aktiengesellschaft Leistungstransistor mit Kurzschlussschutz
JP4156717B2 (ja) * 1998-01-13 2008-09-24 三菱電機株式会社 半導体装置
JP2982785B2 (ja) * 1998-04-03 1999-11-29 富士電機株式会社 デプレッション型ｍｏｓ半導体素子およびｍｏｓパワーｉｃ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104444A (ja) * 1990-11-06 1994-04-15 Harris Corp アクティブクランプを備えたパワーｍｏｓｆｅｔ回路
US5506539A (en) * 1993-06-22 1996-04-09 U.S. Philips Corporation IGFET power semiconductor circuit with GAE control and fault detection circuits
JPH07297358A (ja) * 1994-04-28 1995-11-10 Mitsubishi Electric Corp 半導体パワーモジュールおよび電力変換装置
US6087862A (en) * 1995-10-02 2000-07-11 Siliconix Incorporated Power MOSFET including internal power supply circuitry
KR970063900A (ko) * 1996-02-06 1997-09-12 가네꼬 히사시 기생 트랜지스터가 포함된 전력 mos 트랜지스터를 갖는 반도체 장치
JPH10173500A (ja) * 1996-10-21 1998-06-26 Internatl Rectifier Corp Ｍｏｓゲートパワートランジスタのｄｉ／ｄｔおよびｄｖ／ｄｔの切替制御方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150005443A (ko) * 2013-07-04 2015-01-14 미쓰비시덴키 가부시키가이샤 와이드 갭 반도체장치
KR101596235B1 (ko) 2013-07-04 2016-02-22 미쓰비시덴키 가부시키가이샤 와이드 갭 반도체장치

Also Published As

Publication number Publication date
US6507088B2 (en) 2003-01-14
CN1315746A (zh) 2001-10-03
TW478027B (en) 2002-03-01
CN1162910C (zh) 2004-08-18
JP2001274402A (ja) 2001-10-05
KR20010093047A (ko) 2001-10-27
US20010023967A1 (en) 2001-09-27
EP1137068B1 (en) 2008-05-07
DE60133851D1 (de) 2008-06-19
EP1137068A2 (en) 2001-09-26
EP1137068A3 (en) 2006-06-28

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