JP2001274402A - パワー半導体装置 - Google Patents

パワー半導体装置

Info

Publication number
JP2001274402A
JP2001274402A JP2000085422A JP2000085422A JP2001274402A JP 2001274402 A JP2001274402 A JP 2001274402A JP 2000085422 A JP2000085422 A JP 2000085422A JP 2000085422 A JP2000085422 A JP 2000085422A JP 2001274402 A JP2001274402 A JP 2001274402A
Authority
JP
Japan
Prior art keywords
gate
source
power
resistor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000085422A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001274402A5 (enExample
Inventor
Tatsuo Yoneda
辰雄 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000085422A priority Critical patent/JP2001274402A/ja
Priority to TW090105993A priority patent/TW478027B/zh
Priority to KR1020010013614A priority patent/KR100362218B1/ko
Priority to US09/811,452 priority patent/US6507088B2/en
Priority to CNB011118717A priority patent/CN1162910C/zh
Priority to DE60133851T priority patent/DE60133851D1/de
Priority to EP01106461A priority patent/EP1137068B1/en
Publication of JP2001274402A publication Critical patent/JP2001274402A/ja
Publication of JP2001274402A5 publication Critical patent/JP2001274402A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2000085422A 2000-03-24 2000-03-24 パワー半導体装置 Pending JP2001274402A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2000085422A JP2001274402A (ja) 2000-03-24 2000-03-24 パワー半導体装置
TW090105993A TW478027B (en) 2000-03-24 2001-03-14 Power semiconductor device having a protection circuit
KR1020010013614A KR100362218B1 (ko) 2000-03-24 2001-03-16 전력 반도체장치
US09/811,452 US6507088B2 (en) 2000-03-24 2001-03-20 Power semiconductor device including voltage drive type power MOS transistor
CNB011118717A CN1162910C (zh) 2000-03-24 2001-03-22 电力半导体装置
DE60133851T DE60133851D1 (de) 2000-03-24 2001-03-23 Leistungshalbleiterbauelement mit Schutzschaltkreis
EP01106461A EP1137068B1 (en) 2000-03-24 2001-03-23 Power semiconductor device having a protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000085422A JP2001274402A (ja) 2000-03-24 2000-03-24 パワー半導体装置

Publications (2)

Publication Number Publication Date
JP2001274402A true JP2001274402A (ja) 2001-10-05
JP2001274402A5 JP2001274402A5 (enExample) 2005-07-07

Family

ID=18601762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000085422A Pending JP2001274402A (ja) 2000-03-24 2000-03-24 パワー半導体装置

Country Status (7)

Country Link
US (1) US6507088B2 (enExample)
EP (1) EP1137068B1 (enExample)
JP (1) JP2001274402A (enExample)
KR (1) KR100362218B1 (enExample)
CN (1) CN1162910C (enExample)
DE (1) DE60133851D1 (enExample)
TW (1) TW478027B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007264003A (ja) * 2006-03-27 2007-10-11 Seiko Epson Corp 半導体装置、電気光学装置および電子機器
JP2012256718A (ja) * 2011-06-09 2012-12-27 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2014056968A (ja) * 2012-09-13 2014-03-27 Fuji Electric Co Ltd 半導体装置とワイヤオープン不良の検出方法
JP2021118194A (ja) * 2020-01-22 2021-08-10 株式会社東芝 半導体装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7511357B2 (en) * 2007-04-20 2009-03-31 Force-Mos Technology Corporation Trenched MOSFETs with improved gate-drain (GD) clamp diodes
WO2009128942A1 (en) * 2008-04-16 2009-10-22 Bourns, Inc. Current limiting surge protection device
US8068322B2 (en) * 2008-07-31 2011-11-29 Honeywell International Inc. Electronic circuit breaker apparatus and systems
CN101814527A (zh) * 2010-04-22 2010-08-25 复旦大学 一种使用光电子注入进行电导调制的功率器件与方法
CN102158228A (zh) * 2011-04-19 2011-08-17 复旦大学 极低电压毫米波注入锁定二分频器
JP2013065759A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置
US8816725B2 (en) * 2012-12-31 2014-08-26 Nxp B.V. High-voltage electrical switch by series connected semiconductor switches
JP2014216573A (ja) 2013-04-26 2014-11-17 株式会社東芝 半導体装置
JP6218462B2 (ja) * 2013-07-04 2017-10-25 三菱電機株式会社 ワイドギャップ半導体装置
US10468485B2 (en) 2017-05-26 2019-11-05 Allegro Microsystems, Llc Metal-oxide semiconductor (MOS) device structure based on a poly-filled trench isolation region
CN112383293B (zh) * 2020-11-30 2024-07-19 上海维安半导体有限公司 一种智能低边功率开关的控制电路及芯片

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63318781A (ja) * 1987-06-22 1988-12-27 Nissan Motor Co Ltd 過電流保護機能を備えたｍｏｓｆｅｔ
JPH029451U (enExample) * 1988-06-30 1990-01-22
JPH06151827A (ja) * 1992-11-05 1994-05-31 Fuji Electric Co Ltd デュアルゲートｍｏｓサイリスタ
JPH06508958A (ja) * 1991-06-20 1994-10-06 ローベルト　ボツシユ　ゲゼルシヤフト　ミツト　ベ　シユレンクテル　ハフツング モノリシック集積回路装置
JPH07183781A (ja) * 1993-12-22 1995-07-21 Fuji Electric Co Ltd 半導体装置とその駆動装置
JPH11266016A (ja) * 1998-01-13 1999-09-28 Mitsubishi Electric Corp 半導体装置およびその製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764234A1 (de) * 1968-04-27 1971-07-01 Bosch Gmbh Robert Monolithische Halbleiteranordnung mit integrierten Leistungstransistoren,insbesondere als Spannungsregler fuer Fahrzeuglichtmaschinen
US4404477A (en) * 1978-02-22 1983-09-13 Supertex, Inc. Detection circuit and structure therefor
EP0090280A3 (en) * 1982-03-25 1986-03-19 Nissan Motor Co., Ltd. Semiconductor integrated circuit device and method of making the same
IT1226557B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver"
US5172290A (en) 1988-08-10 1992-12-15 Siemens Aktiengesellschaft Gate-source protective circuit for a power mosfet
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
JP2777307B2 (ja) * 1992-04-28 1998-07-16 株式会社東芝 短絡保護回路
DE69420327T2 (de) * 1993-06-22 2000-03-30 Koninklijke Philips Electronics N.V., Eindhoven Halbleiter-Leistungsschaltung
JP3193827B2 (ja) * 1994-04-28 2001-07-30 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置
GB9423076D0 (en) 1994-10-12 1995-01-04 Philips Electronics Uk Ltd A protected switch
JPH0918001A (ja) 1995-06-26 1997-01-17 Ricoh Co Ltd 縦型パワーｍｏｓｆｅｔとその製造方法
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路
EP0766395A3 (de) * 1995-09-27 1999-04-21 Siemens Aktiengesellschaft Leistungstransistor mit Kurzschlussschutz
US5726594A (en) * 1995-10-02 1998-03-10 Siliconix Incorporated Switching device including power MOSFET with internal power supply circuit
JP3036423B2 (ja) * 1996-02-06 2000-04-24 日本電気株式会社 半導体装置
US6127746A (en) * 1996-10-21 2000-10-03 International Rectifier Corp. Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor
JP2982785B2 (ja) * 1998-04-03 1999-11-29 富士電機株式会社 デプレッション型ｍｏｓ半導体素子およびｍｏｓパワーｉｃ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63318781A (ja) * 1987-06-22 1988-12-27 Nissan Motor Co Ltd 過電流保護機能を備えたｍｏｓｆｅｔ
JPH029451U (enExample) * 1988-06-30 1990-01-22
JPH06508958A (ja) * 1991-06-20 1994-10-06 ローベルト　ボツシユ　ゲゼルシヤフト　ミツト　ベ　シユレンクテル　ハフツング モノリシック集積回路装置
JPH06151827A (ja) * 1992-11-05 1994-05-31 Fuji Electric Co Ltd デュアルゲートｍｏｓサイリスタ
JPH07183781A (ja) * 1993-12-22 1995-07-21 Fuji Electric Co Ltd 半導体装置とその駆動装置
JPH11266016A (ja) * 1998-01-13 1999-09-28 Mitsubishi Electric Corp 半導体装置およびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007264003A (ja) * 2006-03-27 2007-10-11 Seiko Epson Corp 半導体装置、電気光学装置および電子機器
JP2012256718A (ja) * 2011-06-09 2012-12-27 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2014056968A (ja) * 2012-09-13 2014-03-27 Fuji Electric Co Ltd 半導体装置とワイヤオープン不良の検出方法
JP2021118194A (ja) * 2020-01-22 2021-08-10 株式会社東芝 半導体装置
JP7295047B2 (ja) 2020-01-22 2023-06-20 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
US6507088B2 (en) 2003-01-14
CN1315746A (zh) 2001-10-03
TW478027B (en) 2002-03-01
CN1162910C (zh) 2004-08-18
KR100362218B1 (ko) 2002-11-23
KR20010093047A (ko) 2001-10-27
US20010023967A1 (en) 2001-09-27
EP1137068B1 (en) 2008-05-07
DE60133851D1 (de) 2008-06-19
EP1137068A2 (en) 2001-09-26
EP1137068A3 (en) 2006-06-28

Similar Documents

Publication Publication Date Title
JP2001274402A (ja) パワー半導体装置
JP4402109B2 (ja) 低電圧ｎｍｏｓ型静電気放電クランプ
US8390340B2 (en) Load driving device
JP3164065B2 (ja) 半導体装置
WO2008005401A2 (en) Thermally stable semiconductor power device
JP2002313949A (ja) 過電圧保護回路
JPH08222643A (ja) 半導体装置の入力保護回路
JPH03272180A (ja) 半導体集積回路
CN100411166C (zh) 静电放电保护电路及其控制方法
US6972475B2 (en) Semiconductor device
US5504361A (en) Polarity-reversal protection for integrated electronic circuits in CMOS technology
US20030043517A1 (en) Electro-static discharge protecting circuit
TWI221662B (en) Semiconductor device having a protective circuit
KR100364876B1 (ko) 보호회로
EP0632501B1 (en) A semiconductor device including protection means
EP1139566A1 (en) Semiconductor circuit with insulated gate device and associated control circuitry
JP2004228317A (ja) 半導体記憶装置
JPH11145454A (ja) 半導体装置、静電保護素子及び絶縁破壊防止方法
JP2000236022A (ja) フューズトリミング回路
US7741694B2 (en) Semiconductor integrated circuit device
JP3554353B2 (ja) 電界効果トランジスタの保護装置
KR970053847A (ko) 반도체 장치용 정전기 방지회로 및 그 제조방법
JP3810401B2 (ja) 半導体装置
JPH04321773A (ja) 自動車用パワー集積回路
JP2001028437A (ja) 過電流保護装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041101

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041101

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20051125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080311

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080428

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080527