CN1162910C - 电力半导体装置 - Google Patents

电力半导体装置 Download PDF

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Publication number
CN1162910C
CN1162910C CNB011118717A CN01111871A CN1162910C CN 1162910 C CN1162910 C CN 1162910C CN B011118717 A CNB011118717 A CN B011118717A CN 01111871 A CN01111871 A CN 01111871A CN 1162910 C CN1162910 C CN 1162910C
Authority
CN
China
Prior art keywords
power
gate
source
resistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB011118717A
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English (en)
Chinese (zh)
Other versions
CN1315746A (zh
Inventor
米田辰雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1315746A publication Critical patent/CN1315746A/zh
Application granted granted Critical
Publication of CN1162910C publication Critical patent/CN1162910C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
CNB011118717A 2000-03-24 2001-03-22 电力半导体装置 Expired - Fee Related CN1162910C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000085422A JP2001274402A (ja) 2000-03-24 2000-03-24 パワー半導体装置
JP085422/2000 2000-03-24

Publications (2)

Publication Number Publication Date
CN1315746A CN1315746A (zh) 2001-10-03
CN1162910C true CN1162910C (zh) 2004-08-18

Family

ID=18601762

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011118717A Expired - Fee Related CN1162910C (zh) 2000-03-24 2001-03-22 电力半导体装置

Country Status (7)

Country Link
US (1) US6507088B2 (enExample)
EP (1) EP1137068B1 (enExample)
JP (1) JP2001274402A (enExample)
KR (1) KR100362218B1 (enExample)
CN (1) CN1162910C (enExample)
DE (1) DE60133851D1 (enExample)
TW (1) TW478027B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103916109A (zh) * 2012-12-31 2014-07-09 Nxp股份有限公司 高压电气开关

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4946123B2 (ja) * 2006-03-27 2012-06-06 セイコーエプソン株式会社 半導体装置、電気光学装置および電子機器
US7511357B2 (en) * 2007-04-20 2009-03-31 Force-Mos Technology Corporation Trenched MOSFETs with improved gate-drain (GD) clamp diodes
GB2471223B (en) * 2008-04-16 2013-01-23 Bourns Inc Current limiting surge protection device.
US8068322B2 (en) * 2008-07-31 2011-11-29 Honeywell International Inc. Electronic circuit breaker apparatus and systems
CN101814527A (zh) * 2010-04-22 2010-08-25 复旦大学 一种使用光电子注入进行电导调制的功率器件与方法
CN102158228A (zh) * 2011-04-19 2011-08-17 复旦大学 极低电压毫米波注入锁定二分频器
JP5959162B2 (ja) * 2011-06-09 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2013065759A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置
JP6056299B2 (ja) * 2012-09-13 2017-01-11 富士電機株式会社 半導体装置とワイヤオープン不良の検出方法
JP2014216573A (ja) 2013-04-26 2014-11-17 株式会社東芝 半導体装置
JP6218462B2 (ja) * 2013-07-04 2017-10-25 三菱電機株式会社 ワイドギャップ半導体装置
US10468485B2 (en) 2017-05-26 2019-11-05 Allegro Microsystems, Llc Metal-oxide semiconductor (MOS) device structure based on a poly-filled trench isolation region
JP7295047B2 (ja) * 2020-01-22 2023-06-20 株式会社東芝 半導体装置
CN112383293B (zh) * 2020-11-30 2024-07-19 上海维安半导体有限公司 一种智能低边功率开关的控制电路及芯片

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764234A1 (de) * 1968-04-27 1971-07-01 Bosch Gmbh Robert Monolithische Halbleiteranordnung mit integrierten Leistungstransistoren,insbesondere als Spannungsregler fuer Fahrzeuglichtmaschinen
US4404477A (en) * 1978-02-22 1983-09-13 Supertex, Inc. Detection circuit and structure therefor
EP0090280A3 (en) * 1982-03-25 1986-03-19 Nissan Motor Co., Ltd. Semiconductor integrated circuit device and method of making the same
JPH0666472B2 (ja) * 1987-06-22 1994-08-24 日産自動車株式会社 過電流保護機能を備えたｍｏｓｆｅｔ
JPH0749805Y2 (ja) * 1988-06-30 1995-11-13 関西日本電気株式会社 半導体装置
IT1226557B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver"
US5172290A (en) 1988-08-10 1992-12-15 Siemens Aktiengesellschaft Gate-source protective circuit for a power mosfet
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
DE4120394A1 (de) * 1991-06-20 1992-12-24 Bosch Gmbh Robert Monolithisch integrierte schaltungsanordnung
JP2777307B2 (ja) * 1992-04-28 1998-07-16 株式会社東芝 短絡保護回路
JP3161092B2 (ja) * 1992-11-05 2001-04-25 富士電機株式会社 デュアルゲートｍｏｓサイリスタ
DE69420327T2 (de) * 1993-06-22 2000-03-30 Koninklijke Philips Electronics N.V., Eindhoven Halbleiter-Leistungsschaltung
JPH07183781A (ja) * 1993-12-22 1995-07-21 Fuji Electric Co Ltd 半導体装置とその駆動装置
JP3193827B2 (ja) * 1994-04-28 2001-07-30 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置
GB9423076D0 (en) 1994-10-12 1995-01-04 Philips Electronics Uk Ltd A protected switch
JPH0918001A (ja) 1995-06-26 1997-01-17 Ricoh Co Ltd 縦型パワーｍｏｓｆｅｔとその製造方法
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路
EP0766395A3 (de) * 1995-09-27 1999-04-21 Siemens Aktiengesellschaft Leistungstransistor mit Kurzschlussschutz
US5726594A (en) * 1995-10-02 1998-03-10 Siliconix Incorporated Switching device including power MOSFET with internal power supply circuit
JP3036423B2 (ja) * 1996-02-06 2000-04-24 日本電気株式会社 半導体装置
US6127746A (en) * 1996-10-21 2000-10-03 International Rectifier Corp. Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor
JP4156717B2 (ja) * 1998-01-13 2008-09-24 三菱電機株式会社 半導体装置
JP2982785B2 (ja) * 1998-04-03 1999-11-29 富士電機株式会社 デプレッション型ｍｏｓ半導体素子およびｍｏｓパワーｉｃ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103916109A (zh) * 2012-12-31 2014-07-09 Nxp股份有限公司 高压电气开关
CN103916109B (zh) * 2012-12-31 2018-02-02 Nxp股份有限公司 高压电气开关

Also Published As

Publication number Publication date
EP1137068A3 (en) 2006-06-28
TW478027B (en) 2002-03-01
EP1137068A2 (en) 2001-09-26
CN1315746A (zh) 2001-10-03
US20010023967A1 (en) 2001-09-27
DE60133851D1 (de) 2008-06-19
KR100362218B1 (ko) 2002-11-23
EP1137068B1 (en) 2008-05-07
KR20010093047A (ko) 2001-10-27
JP2001274402A (ja) 2001-10-05
US6507088B2 (en) 2003-01-14

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20040818