JP2009071284A5 - - Google Patents

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Publication number
JP2009071284A5
JP2009071284A5 JP2008202552A JP2008202552A JP2009071284A5 JP 2009071284 A5 JP2009071284 A5 JP 2009071284A5 JP 2008202552 A JP2008202552 A JP 2008202552A JP 2008202552 A JP2008202552 A JP 2008202552A JP 2009071284 A5 JP2009071284 A5 JP 2009071284A5
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JP
Japan
Prior art keywords
semiconductor film
display device
channel thin
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008202552A
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English (en)
Japanese (ja)
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JP2009071284A (ja
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Publication date
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Priority to JP2008202552A priority Critical patent/JP2009071284A/ja
Priority claimed from JP2008202552A external-priority patent/JP2009071284A/ja
Publication of JP2009071284A publication Critical patent/JP2009071284A/ja
Publication of JP2009071284A5 publication Critical patent/JP2009071284A5/ja
Withdrawn legal-status Critical Current

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JP2008202552A 2007-08-17 2008-08-06 表示装置 Withdrawn JP2009071284A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008202552A JP2009071284A (ja) 2007-08-17 2008-08-06 表示装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007213055 2007-08-17
JP2008202552A JP2009071284A (ja) 2007-08-17 2008-08-06 表示装置

Publications (2)

Publication Number Publication Date
JP2009071284A JP2009071284A (ja) 2009-04-02
JP2009071284A5 true JP2009071284A5 (enExample) 2011-08-18

Family

ID=40362261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008202552A Withdrawn JP2009071284A (ja) 2007-08-17 2008-08-06 表示装置

Country Status (5)

Country Link
US (1) US7888681B2 (enExample)
JP (1) JP2009071284A (enExample)
KR (1) KR101576813B1 (enExample)
CN (1) CN101369587B (enExample)
TW (1) TWI491045B (enExample)

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WO2010071183A1 (en) * 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101671210B1 (ko) 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20110008918A (ko) * 2009-07-21 2011-01-27 삼성모바일디스플레이주식회사 평판표시장치 및 그의 제조 방법
TWI650848B (zh) 2009-08-07 2019-02-11 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101801956B1 (ko) 2009-09-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
KR20170085148A (ko) * 2009-10-09 2017-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20170024130A (ko) 2009-10-21 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
TWI507934B (zh) * 2009-11-20 2015-11-11 Semiconductor Energy Lab 顯示裝置
KR20120106766A (ko) 2009-11-20 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
CN101789398B (zh) * 2010-03-09 2012-08-22 友达光电股份有限公司 半导体元件的制造方法
JP5948025B2 (ja) 2010-08-06 2016-07-06 株式会社半導体エネルギー研究所 液晶表示装置
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8766253B2 (en) * 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI534905B (zh) * 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 顯示裝置及顯示裝置之製造方法
TWI627483B (zh) * 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
CN104091810A (zh) * 2014-06-30 2014-10-08 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
KR102375685B1 (ko) 2016-02-02 2022-03-18 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
KR102603300B1 (ko) * 2016-12-30 2023-11-15 엘지디스플레이 주식회사 박막 트랜지스터, 그의 제조방법, 및 그를 포함하는 유기발광 표시장치
CN107507827A (zh) 2017-09-01 2017-12-22 武汉华星光电技术有限公司 显示面板的静电保护电路及显示面板
WO2019075746A1 (zh) * 2017-10-20 2019-04-25 深圳市柔宇科技有限公司 光传感器和有机发光二极管显示屏
CN108598171A (zh) * 2017-12-28 2018-09-28 深圳市华星光电技术有限公司 氧化物半导体薄膜晶体管及其制造方法
KR102748791B1 (ko) 2020-04-16 2025-01-02 삼성전자주식회사 디스플레이 모듈 및 디스플레이 모듈의 구동 방법

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JPH0637313A (ja) 1992-07-16 1994-02-10 Hitachi Ltd 薄膜半導体装置とその製造方法
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JP3152829B2 (ja) 1994-01-18 2001-04-03 株式会社東芝 半導体装置の製造方法
DE69525558T2 (de) * 1994-04-22 2002-08-22 Nec Corp., Tokio/Tokyo Methode zur Herstellung eines Dünnfilm-Transistors mit invertierter Struktur
KR970077745A (ko) * 1996-05-28 1997-12-12 장진 염소가 함유된 비정질 실리콘/비정질 실리콘 다층을 활성층으로 이용한 박막 트랜지스터의 구조 및 제조 방법
US20040229412A1 (en) * 1999-05-10 2004-11-18 Sigurd Wagner Inverter made of complementary p and n channel transistors using a single directly-deposited microcrystalline silicon film
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TWI222753B (en) * 2003-05-20 2004-10-21 Au Optronics Corp Method for forming a thin film transistor of an organic light emitting display
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JP4801407B2 (ja) * 2004-09-30 2011-10-26 株式会社半導体エネルギー研究所 表示装置の作製方法
TWI251349B (en) * 2004-11-22 2006-03-11 Au Optronics Corp Method of forming thin film transistor
US7582904B2 (en) * 2004-11-26 2009-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and method for manufacturing thereof, and television device
KR101239889B1 (ko) * 2005-08-13 2013-03-06 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR100671824B1 (ko) * 2005-12-14 2007-01-19 진 장 역 스태거드 박막 트랜지스터 제조 방법

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