KR101576813B1 - 표시 장치 - Google Patents

표시 장치 Download PDF

Info

Publication number
KR101576813B1
KR101576813B1 KR1020080074516A KR20080074516A KR101576813B1 KR 101576813 B1 KR101576813 B1 KR 101576813B1 KR 1020080074516 A KR1020080074516 A KR 1020080074516A KR 20080074516 A KR20080074516 A KR 20080074516A KR 101576813 B1 KR101576813 B1 KR 101576813B1
Authority
KR
South Korea
Prior art keywords
thin film
film transistor
channel
pair
microcrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080074516A
Other languages
English (en)
Korean (ko)
Other versions
KR20090018572A (ko
Inventor
순페이 야마자키
야스유키 아라이
유키에 스즈키
요시유키 쿠로카와
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20090018572A publication Critical patent/KR20090018572A/ko
Application granted granted Critical
Publication of KR101576813B1 publication Critical patent/KR101576813B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/427—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different thicknesses of the semiconductor bodies in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020080074516A 2007-08-17 2008-07-30 표시 장치 Expired - Fee Related KR101576813B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00213055 2007-08-17
JP2007213055 2007-08-17

Publications (2)

Publication Number Publication Date
KR20090018572A KR20090018572A (ko) 2009-02-20
KR101576813B1 true KR101576813B1 (ko) 2015-12-11

Family

ID=40362261

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080074516A Expired - Fee Related KR101576813B1 (ko) 2007-08-17 2008-07-30 표시 장치

Country Status (5)

Country Link
US (1) US7888681B2 (enExample)
JP (1) JP2009071284A (enExample)
KR (1) KR101576813B1 (enExample)
CN (1) CN101369587B (enExample)
TW (1) TWI491045B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12333996B2 (en) 2020-04-16 2025-06-17 Samsung Electronics Co., Ltd. Display module and driving method of display module

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010071183A1 (en) * 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101671210B1 (ko) 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20110008918A (ko) * 2009-07-21 2011-01-27 삼성모바일디스플레이주식회사 평판표시장치 및 그의 제조 방법
TWI869133B (zh) 2009-08-07 2025-01-01 日商半導體能源研究所股份有限公司 半導體裝置
WO2011034068A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
WO2011043195A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101847656B1 (ko) 2009-10-21 2018-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20120106766A (ko) 2009-11-20 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI507934B (zh) 2009-11-20 2015-11-11 Semiconductor Energy Lab 顯示裝置
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
CN101789398B (zh) * 2010-03-09 2012-08-22 友达光电股份有限公司 半导体元件的制造方法
JP5948025B2 (ja) 2010-08-06 2016-07-06 株式会社半導体エネルギー研究所 液晶表示装置
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8766253B2 (en) * 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI534905B (zh) * 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 顯示裝置及顯示裝置之製造方法
TWI627483B (zh) * 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
CN104091810A (zh) * 2014-06-30 2014-10-08 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
KR102375685B1 (ko) * 2016-02-02 2022-03-18 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
KR102603300B1 (ko) * 2016-12-30 2023-11-15 엘지디스플레이 주식회사 박막 트랜지스터, 그의 제조방법, 및 그를 포함하는 유기발광 표시장치
CN107507827A (zh) 2017-09-01 2017-12-22 武汉华星光电技术有限公司 显示面板的静电保护电路及显示面板
WO2019075746A1 (zh) * 2017-10-20 2019-04-25 深圳市柔宇科技有限公司 光传感器和有机发光二极管显示屏
CN108598171A (zh) * 2017-12-28 2018-09-28 深圳市华星光电技术有限公司 氧化物半导体薄膜晶体管及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001133807A (ja) * 1999-10-29 2001-05-18 Fujitsu Ltd 薄膜トランジスタ、液晶表示装置、およびその製造方法
JP2002118120A (ja) * 2001-08-28 2002-04-19 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法
JP2006128666A (ja) * 2004-09-30 2006-05-18 Semiconductor Energy Lab Co Ltd 表示装置の作製方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JP2791422B2 (ja) * 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
JPH0637313A (ja) 1992-07-16 1994-02-10 Hitachi Ltd 薄膜半導体装置とその製造方法
JP2751145B2 (ja) * 1993-12-15 1998-05-18 株式会社三城 眼鏡形状デザイン設計システム
JP3152829B2 (ja) 1994-01-18 2001-04-03 株式会社東芝 半導体装置の製造方法
US5561074A (en) * 1994-04-22 1996-10-01 Nec Corporation Method for fabricating reverse-staggered thin-film transistor
KR970077745A (ko) * 1996-05-28 1997-12-12 장진 염소가 함유된 비정질 실리콘/비정질 실리콘 다층을 활성층으로 이용한 박막 트랜지스터의 구조 및 제조 방법
US20040229412A1 (en) * 1999-05-10 2004-11-18 Sigurd Wagner Inverter made of complementary p and n channel transistors using a single directly-deposited microcrystalline silicon film
GB0017471D0 (en) * 2000-07-18 2000-08-30 Koninkl Philips Electronics Nv Thin film transistors and their manufacture
TWI222753B (en) * 2003-05-20 2004-10-21 Au Optronics Corp Method for forming a thin film transistor of an organic light emitting display
JP2005167051A (ja) * 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
TWI251349B (en) * 2004-11-22 2006-03-11 Au Optronics Corp Method of forming thin film transistor
US7582904B2 (en) * 2004-11-26 2009-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and method for manufacturing thereof, and television device
KR101239889B1 (ko) * 2005-08-13 2013-03-06 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR100671824B1 (ko) * 2005-12-14 2007-01-19 진 장 역 스태거드 박막 트랜지스터 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001133807A (ja) * 1999-10-29 2001-05-18 Fujitsu Ltd 薄膜トランジスタ、液晶表示装置、およびその製造方法
JP2002118120A (ja) * 2001-08-28 2002-04-19 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法
JP2006128666A (ja) * 2004-09-30 2006-05-18 Semiconductor Energy Lab Co Ltd 表示装置の作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12333996B2 (en) 2020-04-16 2025-06-17 Samsung Electronics Co., Ltd. Display module and driving method of display module

Also Published As

Publication number Publication date
TWI491045B (zh) 2015-07-01
CN101369587A (zh) 2009-02-18
KR20090018572A (ko) 2009-02-20
JP2009071284A (ja) 2009-04-02
TW200917492A (en) 2009-04-16
CN101369587B (zh) 2012-05-23
US20090045409A1 (en) 2009-02-19
US7888681B2 (en) 2011-02-15

Similar Documents

Publication Publication Date Title
KR101576813B1 (ko) 표시 장치
JP7689609B2 (ja) 半導体装置
JP5435907B2 (ja) 表示装置の作製方法
KR101564006B1 (ko) 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및 그들의 제조방법
US8030147B2 (en) Method for manufacturing thin film transistor and display device including the thin film transistor
KR101455304B1 (ko) 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법
KR101518792B1 (ko) 반도체 장치의 제작 방법
KR101534099B1 (ko) 미결정 반도체막, 이 미결정 반도체막을 갖는 박막 트랜지스터, 및 광전 변환 장치의 제작 방법
US8106398B2 (en) Microcrystalline semiconductor film, thin film transistor, and display device including thin film transistor
CN101369541A (zh) 半导体器件的制造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20150209

Effective date: 20150831

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20150831

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2008 0074516

Appeal request date: 20150209

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2015101000660

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

St.27 status event code: A-3-4-F10-F13-rex-PS0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20181208

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20181208

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000