JP2000208780A5 - - Google Patents

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Publication number
JP2000208780A5
JP2000208780A5 JP2000035989A JP2000035989A JP2000208780A5 JP 2000208780 A5 JP2000208780 A5 JP 2000208780A5 JP 2000035989 A JP2000035989 A JP 2000035989A JP 2000035989 A JP2000035989 A JP 2000035989A JP 2000208780 A5 JP2000208780 A5 JP 2000208780A5
Authority
JP
Japan
Prior art keywords
thin film
film transistor
channel thin
mobility
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000035989A
Other languages
English (en)
Japanese (ja)
Other versions
JP4112150B2 (ja
JP2000208780A (ja
Filing date
Publication date
Priority claimed from JP8358957A external-priority patent/JPH10200114A/ja
Application filed filed Critical
Priority to JP2000035989A priority Critical patent/JP4112150B2/ja
Publication of JP2000208780A publication Critical patent/JP2000208780A/ja
Publication of JP2000208780A5 publication Critical patent/JP2000208780A5/ja
Application granted granted Critical
Publication of JP4112150B2 publication Critical patent/JP4112150B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2000035989A 1996-12-30 2000-02-14 オペアンプ回路および差動増幅回路の作製方法 Expired - Fee Related JP4112150B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000035989A JP4112150B2 (ja) 1996-12-30 2000-02-14 オペアンプ回路および差動増幅回路の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8358957A JPH10200114A (ja) 1996-12-30 1996-12-30 薄膜回路
JP2000035989A JP4112150B2 (ja) 1996-12-30 2000-02-14 オペアンプ回路および差動増幅回路の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8358957A Division JPH10200114A (ja) 1996-12-30 1996-12-30 薄膜回路

Publications (3)

Publication Number Publication Date
JP2000208780A JP2000208780A (ja) 2000-07-28
JP2000208780A5 true JP2000208780A5 (enExample) 2004-12-09
JP4112150B2 JP4112150B2 (ja) 2008-07-02

Family

ID=18461992

Family Applications (2)

Application Number Title Priority Date Filing Date
JP8358957A Pending JPH10200114A (ja) 1996-12-30 1996-12-30 薄膜回路
JP2000035989A Expired - Fee Related JP4112150B2 (ja) 1996-12-30 2000-02-14 オペアンプ回路および差動増幅回路の作製方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP8358957A Pending JPH10200114A (ja) 1996-12-30 1996-12-30 薄膜回路

Country Status (2)

Country Link
US (4) US6331718B1 (enExample)
JP (2) JPH10200114A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0665119U (ja) * 1993-02-24 1994-09-13 西川化成株式会社 エアバッグ装置
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JPH10200114A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 薄膜回路
JP2000208771A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
TWI301907B (en) * 2000-04-03 2008-10-11 Semiconductor Energy Lab Semiconductor device, liquid crystal display device and manfacturing method thereof
US6831299B2 (en) 2000-11-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6933186B2 (en) * 2001-09-21 2005-08-23 International Business Machines Corporation Method for BEOL resistor tolerance improvement using anodic oxidation
JP2003204067A (ja) 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
JP4689150B2 (ja) * 2002-03-26 2011-05-25 株式会社半導体エネルギー研究所 半導体回路及びその作製方法
US6930326B2 (en) 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
CN101359899B (zh) * 2002-09-10 2011-02-09 日本电气株式会社 薄膜半导体装置及其制造方法
TW200414280A (en) * 2002-09-25 2004-08-01 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device, annealing method, annealing apparatus and display apparatus
SG143934A1 (en) * 2002-11-08 2008-07-29 Semiconductor Energy Lab Display appliance
JP4152797B2 (ja) * 2003-04-14 2008-09-17 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
KR100796608B1 (ko) * 2006-08-11 2008-01-22 삼성에스디아이 주식회사 박막 트랜지스터 어레이 기판의 제조방법
JP5820424B2 (ja) * 2013-04-16 2015-11-24 Ckd株式会社 半田印刷検査装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3253099B2 (ja) * 1990-03-27 2002-02-04 キヤノン株式会社 半導体基板の作製方法
JPH04154312A (ja) 1990-10-18 1992-05-27 Fujitsu Ltd オペアンプ回路
JPH0575037A (ja) 1991-09-13 1993-03-26 Seiko Epson Corp 半導体装置
US5589847A (en) * 1991-09-23 1996-12-31 Xerox Corporation Switched capacitor analog circuits using polysilicon thin film technology
CA2143647C (en) * 1992-09-11 2005-11-15 Mark B. Spitzer Color filter system for display panels
JPH06149188A (ja) 1992-11-13 1994-05-27 Fujitsu Ltd 液晶表示装置の出力バッファ回路
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US5604360A (en) * 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
US6323071B1 (en) * 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
GB2273837B (en) * 1992-12-11 1996-03-13 Marconi Gec Ltd Amplifier devices
US6413805B1 (en) * 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US6875628B1 (en) * 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
JPH06349735A (ja) 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
US5488000A (en) * 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
TW295703B (enExample) * 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk
JP2975973B2 (ja) * 1993-08-10 1999-11-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3212060B2 (ja) 1993-09-20 2001-09-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3141979B2 (ja) 1993-10-01 2001-03-07 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5624873A (en) * 1993-11-12 1997-04-29 The Penn State Research Foundation Enhanced crystallization of amorphous films
JP3234714B2 (ja) 1994-04-27 2001-12-04 シャープ株式会社 半導体装置およびその製造方法
JP3269734B2 (ja) * 1994-06-21 2002-04-02 シャープ株式会社 半導体装置及びその製造方法
TW272319B (enExample) * 1993-12-20 1996-03-11 Sharp Kk
JP2873669B2 (ja) 1993-12-24 1999-03-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW279275B (enExample) * 1993-12-27 1996-06-21 Sharp Kk
JP3041177B2 (ja) 1993-12-27 2000-05-15 シャープ株式会社 半導体装置の製造方法
JP3150840B2 (ja) 1994-03-11 2001-03-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6162667A (en) * 1994-03-28 2000-12-19 Sharp Kabushiki Kaisha Method for fabricating thin film transistors
JP3059337B2 (ja) 1994-04-21 2000-07-04 シャープ株式会社 半導体装置およびその製造方法
JP3192546B2 (ja) * 1994-04-15 2001-07-30 シャープ株式会社 半導体装置およびその製造方法
JPH07294961A (ja) 1994-04-22 1995-11-10 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置の駆動回路および設計方法
JP3504336B2 (ja) 1994-06-15 2004-03-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH0888369A (ja) 1994-09-14 1996-04-02 Fuji Xerox Co Ltd 半導体装置
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH10200114A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 薄膜回路

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