JPH10200114A - 薄膜回路 - Google Patents

薄膜回路

Info

Publication number
JPH10200114A
JPH10200114A JP8358957A JP35895796A JPH10200114A JP H10200114 A JPH10200114 A JP H10200114A JP 8358957 A JP8358957 A JP 8358957A JP 35895796 A JP35895796 A JP 35895796A JP H10200114 A JPH10200114 A JP H10200114A
Authority
JP
Japan
Prior art keywords
thin film
channel
film transistor
operational amplifier
amplifier circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8358957A
Other languages
English (en)
Japanese (ja)
Inventor
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
Hisashi Otani
久 大谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP8358957A priority Critical patent/JPH10200114A/ja
Priority to US08/998,791 priority patent/US6331718B1/en
Publication of JPH10200114A publication Critical patent/JPH10200114A/ja
Priority to JP2000035989A priority patent/JP4112150B2/ja
Priority to US09/946,723 priority patent/US6677611B2/en
Priority to US10/752,000 priority patent/US20040135174A1/en
Priority to US11/462,886 priority patent/US7759681B2/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H10P14/3411—
    • H10P14/3806—

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP8358957A 1996-12-30 1996-12-30 薄膜回路 Pending JPH10200114A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP8358957A JPH10200114A (ja) 1996-12-30 1996-12-30 薄膜回路
US08/998,791 US6331718B1 (en) 1996-12-30 1997-12-29 Thin film circuit with improved carrier mobility
JP2000035989A JP4112150B2 (ja) 1996-12-30 2000-02-14 オペアンプ回路および差動増幅回路の作製方法
US09/946,723 US6677611B2 (en) 1996-12-30 2001-09-04 Thin film circuit
US10/752,000 US20040135174A1 (en) 1996-12-30 2004-01-07 Thin film circuit
US11/462,886 US7759681B2 (en) 1996-12-30 2006-08-07 Thin film circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8358957A JPH10200114A (ja) 1996-12-30 1996-12-30 薄膜回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2000035989A Division JP4112150B2 (ja) 1996-12-30 2000-02-14 オペアンプ回路および差動増幅回路の作製方法

Publications (1)

Publication Number Publication Date
JPH10200114A true JPH10200114A (ja) 1998-07-31

Family

ID=18461992

Family Applications (2)

Application Number Title Priority Date Filing Date
JP8358957A Pending JPH10200114A (ja) 1996-12-30 1996-12-30 薄膜回路
JP2000035989A Expired - Fee Related JP4112150B2 (ja) 1996-12-30 2000-02-14 オペアンプ回路および差動増幅回路の作製方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2000035989A Expired - Fee Related JP4112150B2 (ja) 1996-12-30 2000-02-14 オペアンプ回路および差動増幅回路の作製方法

Country Status (2)

Country Link
US (4) US6331718B1 (enExample)
JP (2) JPH10200114A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006741A (ja) * 2002-03-26 2004-01-08 Semiconductor Energy Lab Co Ltd 半導体回路及びその作製方法
US7312473B2 (en) 2001-12-28 2007-12-25 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device using the same
US7704812B2 (en) 2002-03-26 2010-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0665119U (ja) * 1993-02-24 1994-09-13 西川化成株式会社 エアバッグ装置
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JPH10200114A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 薄膜回路
JP2000208771A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
TWI301907B (en) * 2000-04-03 2008-10-11 Semiconductor Energy Lab Semiconductor device, liquid crystal display device and manfacturing method thereof
US6831299B2 (en) 2000-11-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6933186B2 (en) * 2001-09-21 2005-08-23 International Business Machines Corporation Method for BEOL resistor tolerance improvement using anodic oxidation
CN101359899B (zh) * 2002-09-10 2011-02-09 日本电气株式会社 薄膜半导体装置及其制造方法
TW200414280A (en) * 2002-09-25 2004-08-01 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device, annealing method, annealing apparatus and display apparatus
SG143934A1 (en) 2002-11-08 2008-07-29 Semiconductor Energy Lab Display appliance
JP4152797B2 (ja) * 2003-04-14 2008-09-17 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
KR100796608B1 (ko) * 2006-08-11 2008-01-22 삼성에스디아이 주식회사 박막 트랜지스터 어레이 기판의 제조방법
JP5820424B2 (ja) * 2013-04-16 2015-11-24 Ckd株式会社 半田印刷検査装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3253099B2 (ja) * 1990-03-27 2002-02-04 キヤノン株式会社 半導体基板の作製方法
JPH04154312A (ja) 1990-10-18 1992-05-27 Fujitsu Ltd オペアンプ回路
JPH0575037A (ja) 1991-09-13 1993-03-26 Seiko Epson Corp 半導体装置
US5589847A (en) * 1991-09-23 1996-12-31 Xerox Corporation Switched capacitor analog circuits using polysilicon thin film technology
WO1994007177A1 (en) * 1992-09-11 1994-03-31 Kopin Corporation Color filter system for display panels
JPH06149188A (ja) 1992-11-13 1994-05-27 Fujitsu Ltd 液晶表示装置の出力バッファ回路
US5604360A (en) 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
US5403762A (en) 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US6323071B1 (en) 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
TW226478B (en) 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
GB2273837B (en) * 1992-12-11 1996-03-13 Marconi Gec Ltd Amplifier devices
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US6875628B1 (en) 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
JPH06349735A (ja) 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
US5488000A (en) * 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
TW295703B (enExample) * 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk
JP2975973B2 (ja) * 1993-08-10 1999-11-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3212060B2 (ja) 1993-09-20 2001-09-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3141979B2 (ja) 1993-10-01 2001-03-07 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5624873A (en) * 1993-11-12 1997-04-29 The Penn State Research Foundation Enhanced crystallization of amorphous films
TW272319B (enExample) 1993-12-20 1996-03-11 Sharp Kk
JP3234714B2 (ja) 1994-04-27 2001-12-04 シャープ株式会社 半導体装置およびその製造方法
JP3269734B2 (ja) * 1994-06-21 2002-04-02 シャープ株式会社 半導体装置及びその製造方法
JP2873669B2 (ja) 1993-12-24 1999-03-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW279275B (enExample) 1993-12-27 1996-06-21 Sharp Kk
JP3041177B2 (ja) 1993-12-27 2000-05-15 シャープ株式会社 半導体装置の製造方法
JP3150840B2 (ja) 1994-03-11 2001-03-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6162667A (en) 1994-03-28 2000-12-19 Sharp Kabushiki Kaisha Method for fabricating thin film transistors
JP3059337B2 (ja) 1994-04-21 2000-07-04 シャープ株式会社 半導体装置およびその製造方法
JP3192546B2 (ja) * 1994-04-15 2001-07-30 シャープ株式会社 半導体装置およびその製造方法
JPH07294961A (ja) 1994-04-22 1995-11-10 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置の駆動回路および設計方法
JP3504336B2 (ja) 1994-06-15 2004-03-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH0888369A (ja) 1994-09-14 1996-04-02 Fuji Xerox Co Ltd 半導体装置
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH10200114A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 薄膜回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7312473B2 (en) 2001-12-28 2007-12-25 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device using the same
JP2004006741A (ja) * 2002-03-26 2004-01-08 Semiconductor Energy Lab Co Ltd 半導体回路及びその作製方法
US7704812B2 (en) 2002-03-26 2010-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same

Also Published As

Publication number Publication date
US20060267018A1 (en) 2006-11-30
US20020005516A1 (en) 2002-01-17
US6331718B1 (en) 2001-12-18
JP4112150B2 (ja) 2008-07-02
JP2000208780A (ja) 2000-07-28
US6677611B2 (en) 2004-01-13
US20040135174A1 (en) 2004-07-15
US7759681B2 (en) 2010-07-20

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