JP2003115574A - ワンタイムプログラマブルヒューズ／アンチヒューズの組み合わせを用いたメモリセル - Google Patents

ワンタイムプログラマブルヒューズ／アンチヒューズの組み合わせを用いたメモリセル

Info

Publication number
JP2003115574A
JP2003115574A JP2002273091A JP2002273091A JP2003115574A JP 2003115574 A JP2003115574 A JP 2003115574A JP 2002273091 A JP2002273091 A JP 2002273091A JP 2002273091 A JP2002273091 A JP 2002273091A JP 2003115574 A JP2003115574 A JP 2003115574A
Authority
JP
Japan
Prior art keywords
fuse
conductor
memory cell
antifuse
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002273091A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003115574A5 (https=
Inventor
Thomas C Anthony
トーマス・シー・アンソニー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2003115574A publication Critical patent/JP2003115574A/ja
Publication of JP2003115574A5 publication Critical patent/JP2003115574A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP2002273091A 2001-09-28 2002-09-19 ワンタイムプログラマブルヒューズ／アンチヒューズの組み合わせを用いたメモリセル Withdrawn JP2003115574A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/964768 2001-09-28
US09/964,768 US6580144B2 (en) 2001-09-28 2001-09-28 One time programmable fuse/anti-fuse combination based memory cell

Publications (2)

Publication Number Publication Date
JP2003115574A true JP2003115574A (ja) 2003-04-18
JP2003115574A5 JP2003115574A5 (https=) 2005-04-28

Family

ID=25508968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002273091A Withdrawn JP2003115574A (ja) 2001-09-28 2002-09-19 ワンタイムプログラマブルヒューズ／アンチヒューズの組み合わせを用いたメモリセル

Country Status (6)

Country Link
US (1) US6580144B2 (https=)
EP (1) EP1298729A3 (https=)
JP (1) JP2003115574A (https=)
KR (1) KR20030027859A (https=)
CN (1) CN1409399A (https=)
TW (1) TW564427B (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217417A (ja) * 2004-01-30 2005-08-11 Hewlett-Packard Development Co Lp 半導体デバイスを形成する方法およびシステム
JP2006019688A (ja) * 2004-06-30 2006-01-19 Hynix Semiconductor Inc 相変化記憶素子及びその製造方法
JP2006019686A (ja) * 2004-06-30 2006-01-19 Hynix Semiconductor Inc 相変化記憶素子及びその製造方法
JP2006074028A (ja) * 2004-08-31 2006-03-16 Samsung Electronics Co Ltd 小さな接点を有する相変化記憶素子の製造方法
JP2007035683A (ja) * 2005-07-22 2007-02-08 Elpida Memory Inc 半導体装置及びその製造方法
JP2009520374A (ja) * 2005-12-20 2009-05-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 縦型相変化メモリセルおよびその製造方法
JP2009532898A (ja) * 2006-04-04 2009-09-10 マイクロン テクノロジー， インク． 自己整合相変化材料層を使用する相変化メモリ素子、ならびに、それを製造および使用する方法。
US7884346B2 (en) 2006-03-30 2011-02-08 Panasonic Corporation Nonvolatile memory element and manufacturing method thereof
JP2012212902A (ja) * 2008-04-11 2012-11-01 Sandisk 3D Llc 側壁構造化スイッチャブル抵抗器セル
US9178141B2 (en) 2006-04-04 2015-11-03 Micron Technology, Inc. Memory elements using self-aligned phase change material layers and methods of manufacturing same
US10186516B2 (en) 2015-11-30 2019-01-22 Samsung Electronics Co., Ltd. One time programmable memory device, method of manufacturing the same, and electronic device including the same

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US6774457B2 (en) * 2001-09-13 2004-08-10 Texas Instruments Incorporated Rectangular contact used as a low voltage fuse element
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US20050158950A1 (en) * 2002-12-19 2005-07-21 Matrix Semiconductor, Inc. Non-volatile memory cell comprising a dielectric layer and a phase change material in series
US6879021B1 (en) * 2003-10-06 2005-04-12 International Business Machines Corporation Electronically programmable antifuse and circuits made therewith
JP4383987B2 (ja) * 2004-08-18 2009-12-16 株式会社東芝 Ｍｏｓ型電気ヒューズとそのプログラム方法
US7259023B2 (en) * 2004-09-10 2007-08-21 Intel Corporation Forming phase change memory arrays
KR100620705B1 (ko) * 2004-12-31 2006-09-13 동부일렉트로닉스 주식회사 유전체의 두께가 균일한 안티퓨즈 및 그 제조 방법
US7256471B2 (en) * 2005-03-31 2007-08-14 Freescale Semiconductor, Inc. Antifuse element and electrically redundant antifuse array for controlled rupture location
US7638855B2 (en) * 2005-05-06 2009-12-29 Macronix International Co., Ltd. Anti-fuse one-time-programmable nonvolatile memory
US7388273B2 (en) * 2005-06-14 2008-06-17 International Business Machines Corporation Reprogrammable fuse structure and method
JP5237116B2 (ja) * 2006-01-27 2013-07-17 キロパス テクノロジー インコーポレイテッド 電気的にプログラム可能なヒューズ・ビット
KR100791071B1 (ko) * 2006-07-04 2008-01-02 삼성전자주식회사 일회 프로그래머블 소자, 이를 구비하는 전자시스템 및 그동작 방법
KR100764343B1 (ko) 2006-09-22 2007-10-08 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조방법
US7517235B2 (en) 2006-12-28 2009-04-14 General Electric Company Press fit connection for mounting electrical plug-in outlet insulator to a busway aluminum housing
US7674691B2 (en) * 2007-03-07 2010-03-09 International Business Machines Corporation Method of manufacturing an electrical antifuse
US7679163B2 (en) * 2007-05-14 2010-03-16 Industrial Technology Research Institute Phase-change memory element
KR100875165B1 (ko) * 2007-07-04 2008-12-22 주식회사 동부하이텍 반도체 소자 및 제조 방법
US20090086521A1 (en) * 2007-09-28 2009-04-02 Herner S Brad Multiple antifuse memory cells and methods to form, program, and sense the same
US8232190B2 (en) * 2007-10-01 2012-07-31 International Business Machines Corporation Three dimensional vertical E-fuse structures and methods of manufacturing the same
US8426838B2 (en) 2008-01-25 2013-04-23 Higgs Opl. Capital Llc Phase-change memory
US7715219B2 (en) 2008-06-30 2010-05-11 Allegro Microsystems, Inc. Non-volatile programmable memory cell and memory array
US8604457B2 (en) 2008-11-12 2013-12-10 Higgs Opl. Capital Llc Phase-change memory element
US8426745B2 (en) * 2009-11-30 2013-04-23 Intersil Americas Inc. Thin film resistor
JP5617380B2 (ja) * 2010-06-25 2014-11-05 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
US8637413B2 (en) 2011-12-02 2014-01-28 Sandisk 3D Llc Nonvolatile resistive memory element with a passivated switching layer
US8610243B2 (en) * 2011-12-09 2013-12-17 Globalfoundries Inc. Metal e-fuse with intermetallic compound programming mechanism and methods of making same
US8698119B2 (en) 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
KR102073425B1 (ko) * 2012-02-06 2020-02-04 아이엠이씨 브이제트더블유 자가 절연되는 전도성 브리지 메모리 장치
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
US20140241031A1 (en) 2013-02-28 2014-08-28 Sandisk 3D Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
US20170309565A1 (en) * 2016-04-25 2017-10-26 Infineon Technologies Ag Method of manufacturing semiconductor devices
US11948630B2 (en) * 2021-11-04 2024-04-02 Applied Materials, Inc. Two-terminal one-time programmable fuses for memory cells

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US4914055A (en) * 1989-08-24 1990-04-03 Advanced Micro Devices, Inc. Semiconductor antifuse structure and method
US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5311053A (en) * 1991-06-12 1994-05-10 Aptix Corporation Interconnection network
US5451811A (en) * 1991-10-08 1995-09-19 Aptix Corporation Electrically programmable interconnect element for integrated circuits
US5321322A (en) * 1991-11-27 1994-06-14 Aptix Corporation Programmable interconnect architecture without active devices
US5427979A (en) * 1993-10-18 1995-06-27 Vlsi Technology, Inc. Method for making multi-level antifuse structure
US5903041A (en) * 1994-06-21 1999-05-11 Aptix Corporation Integrated two-terminal fuse-antifuse and fuse and integrated two-terminal fuse-antifuse structures incorporating an air gap
US5572050A (en) * 1994-12-06 1996-11-05 Massachusetts Institute Of Technology Fuse-triggered antifuse
US5973396A (en) * 1996-02-16 1999-10-26 Micron Technology, Inc. Surface mount IC using silicon vias in an area array format or same size as die array
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
US6242789B1 (en) * 1999-02-23 2001-06-05 Infineon Technologies North America Corp. Vertical fuse and method of fabrication
US6124194A (en) * 1999-11-15 2000-09-26 Chartered Semiconductor Manufacturing Ltd. Method of fabrication of anti-fuse integrated with dual damascene process
US6433404B1 (en) * 2000-02-07 2002-08-13 Infineon Technologies Ag Electrical fuses for semiconductor devices
DE10030442B4 (de) * 2000-06-22 2006-01-12 Infineon Technologies Ag Verbindungselement in einem integrierten Schaltkreis
US6509624B1 (en) * 2000-09-29 2003-01-21 International Business Machines Corporation Semiconductor fuses and antifuses in vertical DRAMS
US6498056B1 (en) * 2000-10-31 2002-12-24 International Business Machines Corporation Apparatus and method for antifuse with electrostatic assist
US6664639B2 (en) * 2000-12-22 2003-12-16 Matrix Semiconductor, Inc. Contact and via structure and method of fabrication
US6653710B2 (en) * 2001-02-16 2003-11-25 International Business Machines Corporation Fuse structure with thermal and crack-stop protection
US6584029B2 (en) * 2001-08-09 2003-06-24 Hewlett-Packard Development Company, L.P. One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8148251B2 (en) 2004-01-30 2012-04-03 Hewlett-Packard Development Company, L.P. Forming a semiconductor device
JP2005217417A (ja) * 2004-01-30 2005-08-11 Hewlett-Packard Development Co Lp 半導体デバイスを形成する方法およびシステム
JP2006019688A (ja) * 2004-06-30 2006-01-19 Hynix Semiconductor Inc 相変化記憶素子及びその製造方法
JP2006019686A (ja) * 2004-06-30 2006-01-19 Hynix Semiconductor Inc 相変化記憶素子及びその製造方法
JP2006074028A (ja) * 2004-08-31 2006-03-16 Samsung Electronics Co Ltd 小さな接点を有する相変化記憶素子の製造方法
JP2007035683A (ja) * 2005-07-22 2007-02-08 Elpida Memory Inc 半導体装置及びその製造方法
JP2009520374A (ja) * 2005-12-20 2009-05-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 縦型相変化メモリセルおよびその製造方法
US7884346B2 (en) 2006-03-30 2011-02-08 Panasonic Corporation Nonvolatile memory element and manufacturing method thereof
US8227786B2 (en) 2006-03-30 2012-07-24 Panasonic Corporation Nonvolatile memory element
JP4989631B2 (ja) * 2006-03-30 2012-08-01 パナソニック株式会社 不揮発性記憶素子
JP2009532898A (ja) * 2006-04-04 2009-09-10 マイクロン テクノロジー， インク． 自己整合相変化材料層を使用する相変化メモリ素子、ならびに、それを製造および使用する方法。
US8674334B2 (en) 2006-04-04 2014-03-18 Micron Technology, Inc. Memory elements using self-aligned phase change material layers and methods of manufacturing same
US9178141B2 (en) 2006-04-04 2015-11-03 Micron Technology, Inc. Memory elements using self-aligned phase change material layers and methods of manufacturing same
US9595672B2 (en) 2006-04-04 2017-03-14 Micron Technology, Inc. Memory elements using self-aligned phase change material layers and methods of manufacturing same
JP2012212902A (ja) * 2008-04-11 2012-11-01 Sandisk 3D Llc 側壁構造化スイッチャブル抵抗器セル
US10186516B2 (en) 2015-11-30 2019-01-22 Samsung Electronics Co., Ltd. One time programmable memory device, method of manufacturing the same, and electronic device including the same

Also Published As

Publication number Publication date
EP1298729A2 (en) 2003-04-02
KR20030027859A (ko) 2003-04-07
CN1409399A (zh) 2003-04-09
EP1298729A3 (en) 2004-10-13
US6580144B2 (en) 2003-06-17
TW564427B (en) 2003-12-01
US20030062595A1 (en) 2003-04-03

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