TW564427B - One time programmable fuse/anti-fuse combination based memory cell - Google Patents

One time programmable fuse/anti-fuse combination based memory cell Download PDF

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Publication number
TW564427B
TW564427B TW091117918A TW91117918A TW564427B TW 564427 B TW564427 B TW 564427B TW 091117918 A TW091117918 A TW 091117918A TW 91117918 A TW91117918 A TW 91117918A TW 564427 B TW564427 B TW 564427B
Authority
TW
Taiwan
Prior art keywords
fuse
conductor
memory cell
insulator
thin
Prior art date
Application number
TW091117918A
Other languages
English (en)
Chinese (zh)
Inventor
Thomas C Anthony
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of TW564427B publication Critical patent/TW564427B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
TW091117918A 2001-09-28 2002-08-08 One time programmable fuse/anti-fuse combination based memory cell TW564427B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/964,768 US6580144B2 (en) 2001-09-28 2001-09-28 One time programmable fuse/anti-fuse combination based memory cell

Publications (1)

Publication Number Publication Date
TW564427B true TW564427B (en) 2003-12-01

Family

ID=25508968

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091117918A TW564427B (en) 2001-09-28 2002-08-08 One time programmable fuse/anti-fuse combination based memory cell

Country Status (6)

Country Link
US (1) US6580144B2 (https=)
EP (1) EP1298729A3 (https=)
JP (1) JP2003115574A (https=)
KR (1) KR20030027859A (https=)
CN (1) CN1409399A (https=)
TW (1) TW564427B (https=)

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Publication number Priority date Publication date Assignee Title
TWI469339B (zh) * 2005-03-31 2015-01-11 飛思卡爾半導體公司 反熔絲元件及用於控制破裂位置之電氣冗餘反熔絲陣列

Also Published As

Publication number Publication date
EP1298729A2 (en) 2003-04-02
JP2003115574A (ja) 2003-04-18
KR20030027859A (ko) 2003-04-07
CN1409399A (zh) 2003-04-09
EP1298729A3 (en) 2004-10-13
US6580144B2 (en) 2003-06-17
US20030062595A1 (en) 2003-04-03

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