CN1409399A - 以一次可编程熔断器/抗熔断器组合为基础的存储单元 - Google Patents

以一次可编程熔断器/抗熔断器组合为基础的存储单元 Download PDF

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Publication number
CN1409399A
CN1409399A CN02143769A CN02143769A CN1409399A CN 1409399 A CN1409399 A CN 1409399A CN 02143769 A CN02143769 A CN 02143769A CN 02143769 A CN02143769 A CN 02143769A CN 1409399 A CN1409399 A CN 1409399A
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CN
China
Prior art keywords
fuse
conductor
memory cell
enclosed area
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN02143769A
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English (en)
Chinese (zh)
Inventor
T·C·安东尼
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HP Inc
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Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1409399A publication Critical patent/CN1409399A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

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  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CN02143769A 2001-09-28 2002-09-28 以一次可编程熔断器/抗熔断器组合为基础的存储单元 Pending CN1409399A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/964768 2001-09-28
US09/964,768 US6580144B2 (en) 2001-09-28 2001-09-28 One time programmable fuse/anti-fuse combination based memory cell

Publications (1)

Publication Number Publication Date
CN1409399A true CN1409399A (zh) 2003-04-09

Family

ID=25508968

Family Applications (1)

Application Number Title Priority Date Filing Date
CN02143769A Pending CN1409399A (zh) 2001-09-28 2002-09-28 以一次可编程熔断器/抗熔断器组合为基础的存储单元

Country Status (6)

Country Link
US (1) US6580144B2 (https=)
EP (1) EP1298729A3 (https=)
JP (1) JP2003115574A (https=)
KR (1) KR20030027859A (https=)
CN (1) CN1409399A (https=)
TW (1) TW564427B (https=)

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US7675052B2 (en) 2006-09-22 2010-03-09 Hynix Semiconductor Inc. Nonvolatile memory device and fabrication method thereof
CN101339919B (zh) * 2007-07-04 2011-06-29 东部高科股份有限公司 半导体器件及其制造方法
CN102129965A (zh) * 2009-11-30 2011-07-20 英特赛尔美国股份有限公司 薄膜电阻器
CN107393808A (zh) * 2016-04-25 2017-11-24 英飞凌科技股份有限公司 制造半导体器件的方法和裸芯片

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JP4383987B2 (ja) * 2004-08-18 2009-12-16 株式会社東芝 Ｍｏｓ型電気ヒューズとそのプログラム方法
KR100568543B1 (ko) * 2004-08-31 2006-04-07 삼성전자주식회사 작은 접점을 갖는 상변화 기억 소자의 제조방법
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JP5237116B2 (ja) * 2006-01-27 2013-07-17 キロパス テクノロジー インコーポレイテッド 電気的にプログラム可能なヒューズ・ビット
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US8232190B2 (en) * 2007-10-01 2012-07-31 International Business Machines Corporation Three dimensional vertical E-fuse structures and methods of manufacturing the same
US8426838B2 (en) 2008-01-25 2013-04-23 Higgs Opl. Capital Llc Phase-change memory
US7812335B2 (en) * 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
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JP5617380B2 (ja) * 2010-06-25 2014-11-05 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
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US8698119B2 (en) 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
KR102073425B1 (ko) * 2012-02-06 2020-02-04 아이엠이씨 브이제트더블유 자가 절연되는 전도성 브리지 메모리 장치
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
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US11948630B2 (en) * 2021-11-04 2024-04-02 Applied Materials, Inc. Two-terminal one-time programmable fuses for memory cells

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7675052B2 (en) 2006-09-22 2010-03-09 Hynix Semiconductor Inc. Nonvolatile memory device and fabrication method thereof
US7807478B2 (en) 2006-09-22 2010-10-05 Hynix Semiconductor Inc. Nonvolatile memory device and fabrication method thereof
CN101339919B (zh) * 2007-07-04 2011-06-29 东部高科股份有限公司 半导体器件及其制造方法
CN102129965A (zh) * 2009-11-30 2011-07-20 英特赛尔美国股份有限公司 薄膜电阻器
CN107393808A (zh) * 2016-04-25 2017-11-24 英飞凌科技股份有限公司 制造半导体器件的方法和裸芯片

Also Published As

Publication number Publication date
EP1298729A2 (en) 2003-04-02
JP2003115574A (ja) 2003-04-18
KR20030027859A (ko) 2003-04-07
EP1298729A3 (en) 2004-10-13
US6580144B2 (en) 2003-06-17
TW564427B (en) 2003-12-01
US20030062595A1 (en) 2003-04-03

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