KR20030027859A - 메모리 셀 및 메모리 셀 형성 방법 - Google Patents

메모리 셀 및 메모리 셀 형성 방법 Download PDF

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Publication number
KR20030027859A
KR20030027859A KR1020020059093A KR20020059093A KR20030027859A KR 20030027859 A KR20030027859 A KR 20030027859A KR 1020020059093 A KR1020020059093 A KR 1020020059093A KR 20020059093 A KR20020059093 A KR 20020059093A KR 20030027859 A KR20030027859 A KR 20030027859A
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KR
South Korea
Prior art keywords
fuse
conductors
fuses
memory cell
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020020059093A
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English (en)
Korean (ko)
Inventor
안토니토마스씨
Original Assignee
휴렛-팩커드 컴퍼니(델라웨어주법인)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 휴렛-팩커드 컴퍼니(델라웨어주법인) filed Critical 휴렛-팩커드 컴퍼니(델라웨어주법인)
Publication of KR20030027859A publication Critical patent/KR20030027859A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020020059093A 2001-09-28 2002-09-28 메모리 셀 및 메모리 셀 형성 방법 Ceased KR20030027859A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/964,768 2001-09-28
US09/964,768 US6580144B2 (en) 2001-09-28 2001-09-28 One time programmable fuse/anti-fuse combination based memory cell

Publications (1)

Publication Number Publication Date
KR20030027859A true KR20030027859A (ko) 2003-04-07

Family

ID=25508968

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020059093A Ceased KR20030027859A (ko) 2001-09-28 2002-09-28 메모리 셀 및 메모리 셀 형성 방법

Country Status (6)

Country Link
US (1) US6580144B2 (https=)
EP (1) EP1298729A3 (https=)
JP (1) JP2003115574A (https=)
KR (1) KR20030027859A (https=)
CN (1) CN1409399A (https=)
TW (1) TW564427B (https=)

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* Cited by examiner, † Cited by third party
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KR100791071B1 (ko) * 2006-07-04 2008-01-02 삼성전자주식회사 일회 프로그래머블 소자, 이를 구비하는 전자시스템 및 그동작 방법
KR20130090839A (ko) * 2012-02-06 2013-08-14 아이엠이씨 자가 절연되는 전도성 브리지 메모리 장치
KR101532203B1 (ko) * 2008-04-11 2015-07-06 쌘디스크 3디 엘엘씨 측벽 구조 스위칭 가능한 저항기 셀

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US20050158950A1 (en) * 2002-12-19 2005-07-21 Matrix Semiconductor, Inc. Non-volatile memory cell comprising a dielectric layer and a phase change material in series
US6879021B1 (en) * 2003-10-06 2005-04-12 International Business Machines Corporation Electronically programmable antifuse and circuits made therewith
US8148251B2 (en) 2004-01-30 2012-04-03 Hewlett-Packard Development Company, L.P. Forming a semiconductor device
KR100639206B1 (ko) * 2004-06-30 2006-10-30 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
KR100668824B1 (ko) * 2004-06-30 2007-01-16 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
JP4383987B2 (ja) * 2004-08-18 2009-12-16 株式会社東芝 Ｍｏｓ型電気ヒューズとそのプログラム方法
KR100568543B1 (ko) * 2004-08-31 2006-04-07 삼성전자주식회사 작은 접점을 갖는 상변화 기억 소자의 제조방법
US7259023B2 (en) * 2004-09-10 2007-08-21 Intel Corporation Forming phase change memory arrays
KR100620705B1 (ko) * 2004-12-31 2006-09-13 동부일렉트로닉스 주식회사 유전체의 두께가 균일한 안티퓨즈 및 그 제조 방법
US7256471B2 (en) * 2005-03-31 2007-08-14 Freescale Semiconductor, Inc. Antifuse element and electrically redundant antifuse array for controlled rupture location
US7638855B2 (en) * 2005-05-06 2009-12-29 Macronix International Co., Ltd. Anti-fuse one-time-programmable nonvolatile memory
US7388273B2 (en) * 2005-06-14 2008-06-17 International Business Machines Corporation Reprogrammable fuse structure and method
JP4560818B2 (ja) * 2005-07-22 2010-10-13 エルピーダメモリ株式会社 半導体装置及びその製造方法
JP2009520374A (ja) * 2005-12-20 2009-05-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 縦型相変化メモリセルおよびその製造方法
JP5237116B2 (ja) * 2006-01-27 2013-07-17 キロパス テクノロジー インコーポレイテッド 電気的にプログラム可能なヒューズ・ビット
US7884346B2 (en) 2006-03-30 2011-02-08 Panasonic Corporation Nonvolatile memory element and manufacturing method thereof
US9178141B2 (en) 2006-04-04 2015-11-03 Micron Technology, Inc. Memory elements using self-aligned phase change material layers and methods of manufacturing same
US7812334B2 (en) 2006-04-04 2010-10-12 Micron Technology, Inc. Phase change memory elements using self-aligned phase change material layers and methods of making and using same
KR100764343B1 (ko) 2006-09-22 2007-10-08 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조방법
US7517235B2 (en) 2006-12-28 2009-04-14 General Electric Company Press fit connection for mounting electrical plug-in outlet insulator to a busway aluminum housing
US7674691B2 (en) * 2007-03-07 2010-03-09 International Business Machines Corporation Method of manufacturing an electrical antifuse
US7679163B2 (en) * 2007-05-14 2010-03-16 Industrial Technology Research Institute Phase-change memory element
KR100875165B1 (ko) * 2007-07-04 2008-12-22 주식회사 동부하이텍 반도체 소자 및 제조 방법
US20090086521A1 (en) * 2007-09-28 2009-04-02 Herner S Brad Multiple antifuse memory cells and methods to form, program, and sense the same
US8232190B2 (en) * 2007-10-01 2012-07-31 International Business Machines Corporation Three dimensional vertical E-fuse structures and methods of manufacturing the same
US8426838B2 (en) 2008-01-25 2013-04-23 Higgs Opl. Capital Llc Phase-change memory
US7715219B2 (en) 2008-06-30 2010-05-11 Allegro Microsystems, Inc. Non-volatile programmable memory cell and memory array
US8604457B2 (en) 2008-11-12 2013-12-10 Higgs Opl. Capital Llc Phase-change memory element
US8426745B2 (en) * 2009-11-30 2013-04-23 Intersil Americas Inc. Thin film resistor
JP5617380B2 (ja) * 2010-06-25 2014-11-05 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
US8637413B2 (en) 2011-12-02 2014-01-28 Sandisk 3D Llc Nonvolatile resistive memory element with a passivated switching layer
US8610243B2 (en) * 2011-12-09 2013-12-17 Globalfoundries Inc. Metal e-fuse with intermetallic compound programming mechanism and methods of making same
US8698119B2 (en) 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
US20140241031A1 (en) 2013-02-28 2014-08-28 Sandisk 3D Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
KR102327140B1 (ko) 2015-11-30 2021-11-16 삼성전자주식회사 Otp 메모리 소자와 그 제조방법 및 그 메모리 소자를 포함한 전자 장치
US20170309565A1 (en) * 2016-04-25 2017-10-26 Infineon Technologies Ag Method of manufacturing semiconductor devices
US11948630B2 (en) * 2021-11-04 2024-04-02 Applied Materials, Inc. Two-terminal one-time programmable fuses for memory cells

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US5903041A (en) * 1994-06-21 1999-05-11 Aptix Corporation Integrated two-terminal fuse-antifuse and fuse and integrated two-terminal fuse-antifuse structures incorporating an air gap
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100791071B1 (ko) * 2006-07-04 2008-01-02 삼성전자주식회사 일회 프로그래머블 소자, 이를 구비하는 전자시스템 및 그동작 방법
US7656694B2 (en) 2006-07-04 2010-02-02 Samsung Electronics Co., Ltd. Methods of programming one-time programmable devices including chalcogenide material
US7974115B2 (en) 2006-07-04 2011-07-05 Samsung Electronics Co., Ltd. One-time programmable devices including chalcogenide material and electronic systems including the same
KR101532203B1 (ko) * 2008-04-11 2015-07-06 쌘디스크 3디 엘엘씨 측벽 구조 스위칭 가능한 저항기 셀
KR20130090839A (ko) * 2012-02-06 2013-08-14 아이엠이씨 자가 절연되는 전도성 브리지 메모리 장치

Also Published As

Publication number Publication date
EP1298729A2 (en) 2003-04-02
JP2003115574A (ja) 2003-04-18
CN1409399A (zh) 2003-04-09
EP1298729A3 (en) 2004-10-13
US6580144B2 (en) 2003-06-17
TW564427B (en) 2003-12-01
US20030062595A1 (en) 2003-04-03

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